UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A
!Features
1) BV
CEO
< -60V (I
C
=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A / PN2222A.
!
!
!
!Package, marking and packaging specifications
Part No.
UMT2907A
UMT3
R2F
T106
3000
SST2907A
SST3
R2F
T116
3000
MMST2907A
SMT3
R2F
T146
3000
PN2907A
TO-92
-
T93
3000
Packaging type
Marking
Code
Basic ordering unit
(pieces)
!
!
!
!Absolute maximum ratings
(Ta=25
C)
UMT2907A,
SST2907A,
MMST2907A
PN2907A
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
-60
-60
-5
-0.6
150
-55~+150
Unit
V
V
V
A
P
C
0.2
W
0.625
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
!
!
!
!External dimensions
(Units : mm)
UMT2907A
SST2907A
MMST2907A
PN2907A
ROHM : UMT3
EIAJ : SC-70
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2.40.2
1.3
0.95
0.450.1
0.15
0.4
2.90.2
1.90.2
0.95 0.95
+0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0~0.1
2.80.2
1.6
0.3~0.6
1.1
0.80.1
0.15
0.4
2.90.2
1.90.2
0.95 0.95
+0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0~0.1
(2)
(1)
(3)
0.1~0.4
2.10.1
1.250.1
0.90.1
0.2
0.70.1
0.150.05
0.3
2.00.2
1.30.1
0.65 0.65
+0.1
-
0
4.80.2
(12.7Min.)
4.80.2
3.70.2
5
0.450.1
2.3
0.50.1
2.5 +0.3
-
0.1
(1)
(2)
(3)
2.5Min.
All terminals have
same dimensions
All terminals have
same dimensions
All terminals have
same dimensions
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
-
-
-
-
-
-
-
-
-
100
-
100
V
V
V
nA
nA
I
C
=10
A
I
C
=10mA
I
E
=10
A
V
CB
=
-
50V
I
CES
-
-
100
V
CB
=
-
30V
V
EB
=
-
3V
-
-
2.6
V
BE(sat)
-
-
1.3
V
-
-
1.6
I
C
/I
B
=
-
500mA/
-
50mA
V
CE(sat)
-
-
0.4
V
I
C
/I
B
=
-
150mA/
-
15mA
I
C
/I
B
=
-
500mA/
-
50mA
I
C
/I
B
=
-
150mA/
-
15mA
-
300
h
FE
-
-
-
-
-
-
-
V
CE
=
-
10V, I
C
=
-
0.1mA
V
CE
=
-
10V, I
C
=
-
1mA
V
CE
=
-
10V, I
C
=
-
10mA
V
CE
=
-
10V, I
C
=
-
150mA
-
-
V
CE
=
-
10V, I
C
=
-
500mA
f
T
Cob
-
-
-
8
MHz
pF
V
CE
=
-
20V, I
C
=
-
50mA, f=100MHz
V
CB
=
-
10V, f=100kHz
Cib
-
30
pF
V
EB
=
-
2V, f=100kHz
ton
-
50
ns
V
CC
=
-
30V, V
BE(OFF)
=
-
1.5V, I
C
=
-
150mA, I
B1
=
-
15mA
td
-
10
ns
V
CC
=
-
30V, V
BE(OFF)
=
-
1.5V, I
C
=
-
150mA, I
B1
=
-
15mA
V
CC
=
-
30V, V
BE(OFF)
=
-
1.5V, I
C
=
-
150mA, I
B1
=
-
15mA
tr
-
40
ns
V
CC
=
-
30V, I
C
=
-
150mA, I
B1
=I
B2
=
-
15mA
toff
-
100
ns
tstg
-
80
ns
V
CC
=
-
30V , I
C
=
-
150mA, I
B1
=I
B2
=
-
15mA
V
CC
=
-
30V, I
C
=
-
150mA, I
B1
=I
B2
=
-
15mA
tf
-
60
-
60
-
5
-
-
-
-
0.6
-
-
100
100
100
75
50
200
-
-
-
-
-
-
-
-
-
30
ns
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
!
!
!
!Electrical characteristic curves
0
50
100
10
0
5
1
B
=0
A
100
200
400
500
600
300
Ta=25C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
1.0
10
100
1000
0.8
0.6
0.2
1.2
1.0
1.4
1.8
1.6
0.4
0
BASE-EMITTER SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Ta=25C
I
C
/ I
B
=10
Fig.2 Base-emitter saturation
voltage vs. collector current
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collector current ( I )
Ta=25C
V
CE
=10V
1V
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector current ( II )
Ta=125C
Ta=25C
Ta=
-
55C
V
CE
=10V
0.1
10
1.0
100
1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 AC current gain vs. collector current
Ta=25C
V
CE
=10V
f=1kHz
1.0
10
100
1000
0.2
0.3
0.1
0
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Ta=25C
I
C
/
I
B
=10
1.0
10
100
1000
0.8
1.2
1.4
1.8
1.6
0.4
0.2
0.6
1.0
0
BASE
-
EMITTER ON VOLTAGE : V
BE(on)
(V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.7 Grounded emitter propagation
characteristics
Ta=25C
V
CE
=10V
1
10
100
1000
100
1000
10
CURRENT GAIN
-
BANDWIDTH PRODUCT : f
T
(MHz)
COLLECTOR CURRENT : I
C
(
mA)
Fig.8 Gain bandwidth product
vs. collector current
Ta=25C
V
CE
=10V
1
10
100
1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.9 Gain bandwidth product
Ta=25C
100MHz
200MHz
200MHz
300MHz
250MHz
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
0.1
1
10
100
10
100
1
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE (
V)
Fig.10 Input/output capacitance
vs. voltage
Ta=25C
f=1MHz
Cib
C
ob
1
10
100
1000
100
1000
10
TURN ON TIME : ton
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.11 Turn-on time vs.collector
current
Ta=25C
I
C
/
I
B
=10
V
CC
=30V
10V
1
10
100
1000
100
500
5
10
RISE TIME : t
r
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.12 Rise time vs. collector
current
Ta=25C
V
CC
=30V
I
C
/ I
B
=10
1
10
100
1000
100
1000
10
STORAGE TIME : ts
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.13 Storage time vs. collector
current
Ta=25C
V
CC
=30V
I
C
=10I
B1
=10I
B2
1
10
100
1000
100
1000
10
FALL TIME : tf
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.14 Fall time vs. collector
current
Ta=25C
V
CC
=30V
I
C
=10I
B1
=10I
B2
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