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Электронный компонент: UMT3904

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UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!
!
!
!Features
1) BV
CEO
>
40V (I
C
= 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
!
!
!
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
3000
SST3904
SST3
R1A
T116
3000
MMST3904
SMT3
R1A
T146
3000
TO-92
-
T93
3000
2N3904
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
2N3904
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
60
40
6
0.2
0.35
150
-
55~+150
Unit
V
V
V
A
W
W
W
P
C
0.2
0.625
*
C
C
*
When mounted on a 7 x 5 x 0.6 mm ceramic board.
SST3904, MMST3904
UMT3904,
SST3904,
MMST3904
!
!
!
!External dimensions
(Units : mm)
UMT3904
SST3904
MMST3904
2N3904
0~0.1
0.2Min.
2.4
0.2
1.3
0.95
0.450.1
0.15
0.4
2.90.2
1.90.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0~0.1
2.8
0.2
1.6
0.3
~
0.6
1.1
0.80.1
0.15
0.4
2.90.2
1.90.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0~0.1
(2)
(1)
(3)
0.1
~
0.4
2.1
0.1
1.25
0.1
0.90.1
0.2
0.70.1
0.150.05
0.3
2.00.2
1.30.1
0.65 0.65
+0.1
-
0
4.8
0.2
(12.7Min.)
4.80.2
3.70.2
5
0.450.1
2.3
0.5 +0.15
-
0.05
2.5 +0.3
-
0.1
(1)
(2)
(3)
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
2.5Min.
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
60
40
6
-
-
-
-
-
-
-
-
-
-
50
50
V
V
V
nA
nA
I
C
= 10
A
I
C
= 1mA
I
E
= 10
A
V
CB
= 30V
V
EB
= 3V
-
-
0.95
Base-emitter saturation voltage
V
BE(sat)
0.65
-
0.85
V
-
-
0.3
I
C
/I
B
= 50mA/5mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
0.2
V
I
C
/I
B
= 10mA/1mA
I
C
/I
B
= 50mA/5mA
I
C
/I
B
= 10mA/1mA
30
-
-
60
-
-
DC current transfer ratio
h
FE
100
-
300
-
70
-
-
40
-
-
V
CE
= 1V , I
C
= 0.1mA
V
CE
= 1V , I
C
= 1mA
V
CE
= 1V , I
C
= 10mA
V
CE
= 1V , I
C
= 50mA
V
CE
= 1V , I
C
= 100mA
Transition frequency
Collector output capacitance
f
T
Cob
300
-
-
-
-
4
MHz
pF
V
CE
= 20V , I
E
=
-
10mA, f = 100MHz
V
CB
= 10V , f = 100kHz
Emitter input capacitance
Cib
-
-
8
pF
V
EB
= 0.5V , f = 100kHz
Delay time
td
-
-
35
ns
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
Rise time
tr
-
-
35
ns
Storage time
tstg
-
-
200
ns
V
CC
= 3V , I
C
= 10mA , I
B1
=
-
I
B2
= 1mA
V
CC
= 3V , I
C
= 10mA , I
B1
=
-
I
B2
= 1mA
Fall time
tf
-
-
50
ns
~
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
!Electrical characteristic curves
0
8
6
4
2
10
20
0
10
I
B
=0
A
5.0
10
15
20
25
30
35
40
Ta=25
C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter output
characteristics
0.1
1.0
10
100
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25
C
I
C
/ I
B
=10
0.1
10
1.0
100
1000
100
10
500
5
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
Fig.3 DC current gain vs. collector current (
)
Ta=25
C
V
CE
=1V
10V
5V
3V
0.1
10
1.0
100
1000
100
10
500
5
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs. collector current (
)
V
CE
=5V
Ta=125
C
Ta=25
C
Ta=
-
55
C
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
0.01
1.0
0.1
10
100
100
10
500
5
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 AC current gain vs. collector current
Ta=25
C
V
CE
=5V
f=1kHz
0.1
1.0
10
100
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Ta=25
C
I
C
/ I
B
=10
0.1
1.0
10
100
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.7 Grounded emitter propagation
characteristics
Ta=25
C
V
CE
=5V
1.0
10
100
100
1000
10
TURN ON TIME : ton (
ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.8 Turn-on time vs. collector
current
Ta=25
C
I
C
/ I
B
=10
V
CC
=3V
15V
40V
1.0
10
100
100
1000
10
RISE TIME : t
r
(
ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.9 Rise time vs. collector
current
Ta=25
C
I
C
/ I
B
=10
V
CC
=40V
Ta=25
C
I
C
=10I
B1
=10I
B2
1.0
10
100
100
1000
10
STORAGE TIME : ts (
ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.10 Storage time vs. collector
current
V
CE
=3V
40V
15V
1.0
10
100
100
1000
10
FALL TIME : tf (
ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.11 Fall time vs. collector
current
Ta=25
C
V
CC
=40V
I
C
/I
B
=10
0.1
1.0
10
100
10
50
0.5
1
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE (
V)
Fig.12 Input / output capacitance
vs. voltage
Ta=25
C
f=1MHz
Cib
Cob
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
0.1
1.0
10
100
10
1.0
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.13 Gain bandwidth product
Ta=25
C
100MHz 200MHz
400MHz
300 MHz
500MHz
200MHz
100MHz
300MHz
1.0
10
100
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT : f
T
(
MHz)
COLLECTOR CURRENT : I
C
(
mA)
Fig.14 Gain bandwidth product
vs. collector current
Ta=25
C
V
CE
=5V
0.1
1
10
100
10
1
100
0.1
h PARAMETER NORMALIZED TO 1mA
COLLECTOR CURRENT : I
C
(
mA)
Fig.15 h parameter vs. collector current
V
CE
=5V
f=270Hz
hfe
hoe
hie
hre
Ta=25
C
I
C
=1mA
hie=3.84k
hfe=141
hre=5.03
10
-
5
hoe=5.58
S
0
75
25
50
100
125
150
100n
10n
1n
10
1
0.1n
COLLECTOR CUTOFF CURRENT : I
CBO
(
A)
ANBIENT TEMPERATURE : Ta (
C)
Fig.16 Noise characteristics (
)
V
CB
=25V
0.01
0.1
1
10
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(
)
COLLECTOR CURRENT : I
C
(
mA)
Fig.17 Noise characteristics (
)
Ta=25
C
V
CE
=5V
f=10kHz
12dB
8dB
8.0dB
3dB
1.0dB
3.0dB
5dB
5.0dB
NF=1.0dB
0.01
0.1
1
10
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(
)
COLLECTOR CURRENT : I
C
(
mA)
Fig.18 Noise characteristics (
)
Ta=25
C
V
CE
=5V
f=1kHz
12dB
8dB
8.0dB
3dB
1.0dB
3.0dB
5dB
5.0dB
NF=1.0dB
0.01
0.1
1
10
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(
)
COLLECTOR CURRENT : I
C
(
mA)
Fig.19 Noise characteristics (
V
)
Ta=25
C
V
CE
=5V
f=10Hz
12dB
8dB
8.0dB
3dB
5dB
5.0dB
NF=3.0dB
10
1k
100
10k
100k
6
12
10
8
4
2
0
NOISE FIGURE : NF (
dB)
FREQUENCY : f (
Hz)
Fig.20 Noise vs. collector current
Ta=25
C
V
CE
=5V
I
C
=100
A
R
S
=10k