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Электронный компонент: K9K8G08U0A-P

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FLASH MEMORY
1
K9WAG08U1A
K9K8G08U0A
Preliminary
K9XXG08UXA
* Samsung Electronics reserves the right to change products or specification without notice.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
FLASH MEMORY
2
K9WAG08U1A
K9K8G08U0A
Preliminary
Document Title
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
Remark
Advance
Preliminary
History
1. Initial issue
1. Leaded part is eliminated
2. tRHW is defined
Draft Date
Nov. 09. 2005
Jan. 10. 2006
FLASH MEMORY
3
K9WAG08U1A
K9K8G08U0A
Preliminary
GENERAL DESCRIPTION
FEATURES
Voltage Supply
- 2.70V ~ 3.60V
Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25
s(Max.)
- Serial Access : 25ns(Min.)
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Fast Write Cycle Time
- Page Program time : 200
s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection
Package :
- K9K8G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200
s on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9K8G08U0A-P
2.70 ~ 3.60V
X8
TSOP1
K9WAG08U1A-P
K9WAG08U1A-I
52TLGA
FLASH MEMORY
4
K9WAG08U1A
K9K8G08U0A
Preliminary
PIN CONFIGURATION (TSOP1)
K9K8G08U0A-PCB0/PIB0
PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.787
0.008
20.00
0.20
#1
#24
0.
20
+0
.
0
7
-0
.0
3
0.
008
+
0
.003
-0
.0
0
1
0.
50
0.
019
7
#48
#25
0.
488
12
.40
MAX
12
.00
0.
472
0.1
0
0.
004
MAX
0.2
5
0.
010
()
0.039
0.002
1.00
0.05
0.002
0.05
MIN
0.047
1.20
MAX
0.45~0.75
0.018~0.030
0.724
0.004
18.40
0.10
0~8
0.
010
0.2
5
TYP
0.
125
+0
.
0
75
0.0
3
5
0.
00
5
+0
.
0
0
3
-0
.0
0
1
0.50
0.020
(
)
48-pin TSOP1
Standard Type
12mm x 20mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
FLASH MEMORY
5
K9WAG08U1A
K9K8G08U0A
Preliminary
PIN CONFIGURATION (TSOP1)
K9WAG08U1A-PCB0/PIB0
PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.787
0.008
20.00
0.20
#1
#24
0.
20
+0
.
0
7
-0
.0
3
0.
008
+
0
.003
-0
.0
0
1
0.
50
0.
019
7
#48
#25
0.
488
12
.40
MAX
12
.00
0.
472
0.1
0
0.
004
MAX
0.2
5
0.
010
()
0.039
0.002
1.00
0.05
0.002
0.05
MIN
0.047
1.20
MAX
0.45~0.75
0.018~0.030
0.724
0.004
18.40
0.10
0~8
0.
010
0.2
5
TYP
0.
125
+0
.
0
75
0.0
3
5
0.
00
5
+0
.
0
0
3
-0
.0
0
1
0.50
0.020
(
)
48-pin TSOP1
Standard Type
12mm x 20mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
N.C
R/B2
R/B1
RE
CE1
CE2
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C