sAbsolute Maximum Ratings
sElectrical Characteristics
VV
DRM
VV
BO
Parameter
Symbol
Ratings
Unit
Conditions
V
50Hz Half-cycle sinewave, 180
, Continuous current, Tc
=92
C
50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj
=125
C
50Hz Sine wave, RMS, Terminal to case, 1min.
(
Tj=25
C, unless otherwise specified)
A
A
V
V
W
W
C
C
V
V
DRM
I
T (RMS)
I
TSM
V
FGM
V
RGM
P
GM
P
G (AV)
Tj
Tstg
V
ISO
4.7
60
1.5
5.0
5.0
0.5
40 to
+
125
10 to
+
125
1500
Tj
=10 to +125
C,
R
GK
=1k
A
I
T (AV)
3.0
2ms t 10ms
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
A
2
sec
I
2
t
18
V
mA
V
V
mA
V
mA
V/
S
C/W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
A
I
DRM
V
BO
V
TM
I
BO
V
GT
I
GT
V
GT
I
H
dv/dt
Rth
40
V
V
1.0
10
15
5.0
0.1
0.2
0.2
15
1.4
100
1.0
Rank
Ratings
Tj=125
C, V
D
=V
DRM
, R
GK
=1k
Tj=25
C, V
D
=V
DRM
, R
GK
=1k
I
TM
=5A
V
D
=6V, R
L
=10
V
D
=V
DRM
, Tj=125
C, R
GK
=1k
Junction to case
V
D
=V
DRM
, Tj=125
C, R
GK
=1k
, C
GK
=0.033
F
R
GK
=1k
, Tj=125
C
s Features
q
With built-in Avalanche diode
q
Average on-state current: I
T(AV)
=3A
q
Gate trigger current: I
GT
=10mA max
q
Isolation voltage: V
ISO
=1500V(50Hz AC, RMS, 1min.)
A
K
G
Reg.
Input
TFD312S
Application example
min
typ
max
-C
27
30
33
-F
50
55
60
-G
60
65
70
-J
90
100
110
-K
115
125
135
-L
140
150
160
-M
163
175
187
-N
185
200
215
-O
210
225
240
Rank
Ratings
-C
20
-F
35
-G
45
-J
80
-K
100
-L
120
-M
145
-N
170
-O
190
26
16.9
0.3
8.4
0.2
0.8
0.2
3.9
0.2
4.0
0.2
10.0
0.2
4.2
0.2
1.35
0.15
1.35
0.15
2.4
0.2
2.2
0.2
3.3
0.2
0.85
+
0.2
0.1
+
0.2
0.1
C 0.5
2.8
13.0
m
in
2.54
2.54
0.45
TFD312S series
TO-220F 3A Thyristor with built-in Avalanche diode
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
a
b
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
Surge on-state current
Squared rated current and time product
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
Breakover voltage
Breakover current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Thermal resistance
Load
Overvoltage detection
Overcurrent detection
Tj=125
C
Tj=25
C
0.3
0.5
1
100
50
10
5
1.0
2.0
4.0
3.0
On-state voltage
v
T
( V )
On-state current
i
T
(A)
v
T
i
T
Characteristics (max)
Gate current
i
GF
(A)
0
1
2
3
0
2
4
6
8
10
20
18
16
14
12
Gate voltage
v
GF
(V)
Gate Characteristics
0
20
40
60
80
100
Number of cycle
Surge on-state current I
TSM
(A)
I
TSM
Ratings
1
5
10
50
100
Gate trigger current I
GT
(mA)
Gate trigger voltage V
GT
(V)
0
0
1
2
10
20
See graph at the upper right
60
90
120
180
DC
=3
0
0
0
1
2
4
5
6
8
7
3
1
5
2
3
4
6
Average on-state current I
T(AV)
(A)
I
T(AV )
P
T(AV)
Characteristics
Half wave, single phase
0
0
25
50
100
75
150
125
3
6
2
5
4
1
Average on-state current I
T(AV)
(A)
I
T(AV)
Tc Ratings
60
90
120
180
DC
=3
0
Half wave, single phase
T
j
= 40
C
0
C
25
C
50
C
75
C
100
C
125
C
1
10
10
2
10
3
0.5
1.0
2.0
1.5
0.5
0.5
1
10
10
2
10
3
0.2
0.5
10
1
5
30
40
0
75
100
125
25
50
0.8
0.6
0.4
0.2
0
1.0
2
0
4
8
10
6
40
0
75
100
125
25
50
0
C
25
C
50
C
75
C
100
C
125
C
40
0
75
125
100
25
50
0
2
10
8
6
4
12
14
1
10
10
2
10
3
10
4
0.1
0.5
1
5
10
Average on-state power P
T
( AV
)
(W
)
Case temperature T
C
(
C)
27
(R
GK
=1k
)
(V
D
=6V, R
L
=10
)
(V
D
=6V, R
L
=10
)
TFD312S series
1 cycle
10 ms
TSM
I
Tj=125
C
Initial junction temperature
T
j
=
4
0
C
T
j
=25
C
T
j
=
2
0
C
: Conduction angle
180
0
: Conduction angle
180
0
Pulse width
t
w (
s)
Pulse trigger temperature
Characteristics
v
gt
( Typical)
v
gt
V
GT
DC gate trigger
voltage at 25
C
( )
( )
Gate trigger voltage
at Ta and
t
w
20
C
v
gt
t
w
Pulse width
t
w (
s)
Pulse trigger temperature
Characteristics
i
gt
(Typical)
i
gt
I
GT
DC gate trigger
current at 25
C
( )
( )
Gate trigger current
at Ta and
t
w
T
j
= 40
C
i
gt
t
w
20
C
Junction temperature Tj (
C)
Holding current I
H
(mA)
I
H
temperature Characteristics
(Typical)
Junction temperature Tj (
C)
Gate trigger voltage V
GT
(V)
V
GT
temperature Characteristics
(Typical)
Junction temperature Tj (
C)
Gate trigger current I
GT
(mA)
I
GT
temperature Characteristics
(Typical)
t, Time (ms)
Transient thermal resistance
r
th
(
C/
W
)
Transient thermal resistance
Characteristics
(Junction to case)
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