61
QF20AA40/60
TRANSISTOR MODULE
THREE PHASES BRIDGE TYPE
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
QF20AA40 QF20AA60
Unit
V
CBO
Collector-Base Voltage
400
600
V
V
CEX
Collector-Emitter Voltage
V
BE
2V
400
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
=pw
1ms
20
40
A
I
C
Reverse Collector Current
20
A
I
B
Base Current
2
A
P
T
Total power dissipation
T
C
25
160
W
T
j
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting Torque
M5
Recommended Value 1.5
2.5
15
25
2.7
28
N m
f B
Mass
Typical Value
95
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
1.0
200
75
100
2.0
2.5
1.0
12.0
2.0
1.6
0.8
2.2
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
300
V
CEO SUS
Collector Emitter
Sustaning Voltage
QF20AA40
QF20AA60
QF20AA40
QF20AA60
Ic
1A
V
450
400
V
CEX SUS
Ic
4A
I
B2
1A
V
600
h
FE
DC Current Gain
Ic
20A
V
CE
2V
Ic
20A
V
CE
5V
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
20A
I
B
0.27A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
20A
I
B
0.27A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc
300V
Ic
20A
I
B1
0.5A
I
B2
0.5A
Ic
20A
V
ECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QF20AA is six pack Darlington power transistor module which has six transistors
connected in three phase bridge configuraction. Each transistor has a reverse paralleled
fast recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
20A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF , AC Servo, UPS
PDF 
ZIP