ChipFind - документация

Электронный компонент: TSR100AA40

Скачать:  PDF   ZIP
SanRex
SanRex
TRIAC (ISOLATED TYPE) TO-240 PACKAGE
TSR70AA40/60
I
T(RMS)
= 70A, V
DRM
= 400/600V
SanRex
Triac TSR70AA40/60 is designed for full-wave AC
control applications. It can be used as an ON/OFF function or
for phase control operations.
Features
* Glass-passivated junctions Features
* High Surge Current
* UL registered E76102
Typical Applications
* Heater Control
* Motor Control
* Lighting Control
< Maximum Ratings >
(Tj = 25
C Unless Otherwise Specified)
Ratings
Symbol
Item
TSR70AA40
TSR70AA60
Unit
V
DRM
Repetitive Peak Off-state Voltage
400
600
V
V
DSM
Non-Repetitive Peak Off-state Voltage
450
650
V
Symbol
Item
Conditions
Ratings
Unit
I
T(RMS)
R.M.S. On-state Current
T
C
= 101C
70
A
I
TSM
Surge On-state Current
One cycle, 50Hz/60Hz, Peak, non-repetitive
900/1000
A
I
2
t
I
2
t (for fusing)
Value for one cycle surge current
4160
A
2
s
P
GM
Peak Gate Power Dissipation
10
W
P
G(AV)
Average Gate Power Dissipation
1
W
I
GM
Peak Gate Current
3
A
V
G M
Peak Gate Voltage
10
V
di/dt
Critical Rate of Rise of On-state Current
I
G
=100mA V
D
=1/2V
DRM
di/dt=1A/
F
s
50
A/
F
s
Tj
Operation Junction Temperature
-40 to +125
C
T
s t g
Storage Temperature
-40 to +125
C
V
ISO
Isolation Breakdown Voltage
A.C. 1 minute
2500
V
Mounting M5
Recommended Value 1.5 to 2.5 (15 to 25)
2.7(28)
Mounting
Torque
Terminals M5
Recommended Value1.5 to 2.5 (15 to 25)
2.7(28)
N*m
(kg *
cm)
Mass
Typical Value
170
g
< Electrical Characteristics >
(Tj = 25
C Unless Otherwise Specified)
Ratings
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
I
DRM
Repetitive Peak Off-state Current
T
j
= 125C, V
D
= V
DRM
10
mA
V
T M
Peak On-State Voltage
I
T
= 100A
1.35
V
I
GT
1
+
QI
V
D
= 6V, I
T
= 1A
50
mA
I
GT
1
-
QII
V
D
= 6V, I
T
= 1A
50
mA
I
GT
3
+
QIV
-
-
-
mA
I
GT
3
-
QIII
Gate Trigger Current
V
D
= 6V, I
T
= 1A
50
mA
V
G T
1
+
QI
V
D
= 6V, I
T
= 1A
3
V
V
G T
1
-
QII
V
D
= 6V, I
T
= 1A
3
V
V
G T
3
+
QIV
-
-
-
V
V
G T
3
-
QIII
Gate Trigger Voltage
V
D
= 6V, I
T
= 1A
3
V
V
G D
Non-Trigger Gate Voltage
Tj = 125
C, V
D
=1/2V
DRM
0.2
V
dv/dt
Critical Rate of Rise of Off-State Voltage
Tj = 125
C, V
D
=2/3V
DRM
, exp. Wave
50
V/
F
s
(dv/dt)c
Critical Rate of Rise of Commutation
Voltage
Tj = 125
C, V
D
=2/3V
DRM
(di/dt)c=8A/ms
6
V/
F
s
I
H
Holding Current
50
100
mA
R
th(j-c)
Thermal Resistance
Junction to case
0.3
C/W
____________________________________________________________________________________________________________________________________
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516) 625-1313 FAX(516) 625-8845 E-mail: semi@sanrex.com