2SA1875 / 2SC4976
No.5507-1/5
Features
High fT : fT=400MHz(typ).
High breakdown voltage : VCEO
200V(min).
Large current capacitance.
Small reverse transfer capacitance and excellent high
-frequency characteristic :
Cre=3.4pF(NPN), 4.2pF(PNP).
Adoption of FBET process.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5507B
2SA1875 / 2SC4976
High-Definition CRT Display
Video Output Applications
52101 TS IM TA-9766
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
Package Dimensions
unit : mm
2045B
unit : mm
2044B
[2SA1875 / 2SC4976]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
[2SA1875 / 2SC4976]
2SA1875 / 2SC4976
No.5507-2/5
Specifications
( ) : 2SA1875
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)200
V
Collector-to-Emitter Voltage
VCEO
(--)200
V
Emitter-to-Base Voltage
VEBO
(--)3
V
Collector Current
IC
(--)300
mA
Collector Current (Pulse)
ICP
(--)600
mA
Base Current
IB
(--)30
mA
Collector Dissipation
PC
0.8
W
Tc=25
C
12
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)150V, IE=0
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)2V, IC=0
(--)1.0
A
DC Current Gain
hFE1
VCE=(--)10V, IC=(--)50mA
60*
320*
hFE2
VCE=(--)10V, IC=(--)250mA
20
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
400
MHz
Output Capacitance
Cob
VCB=(--)30V, f=1MHz
(5.0)4.2
pF
Reverse Transfer Capacitance
Cre
VCB=(--)30V, f=1MHz
(4.2)3.4
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)50mA, IB=(--)5mA
(--)1.0
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)50mA, IB=(--)5mA
(--)1.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10
A, IE=0
(--)200
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=
(--)200
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)100
A, IC=0
(--)3
V
* : The 2SA1875 / 2SC4976 are classified by 50mA hFE as follows
Rank
D
E
F
hFE
60 to 120
100 to 200
160 to 320
0
--0.2
--0.4
--0.6
--1.0
--0.8
--1.2
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
mA
IT03431
--100
--50
0
--350
--150
--200
--250
--300
2SA1875
VCE= --10V
0
0.2
0.4
0.6
1.0
0.8
1.2
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
mA
IT03432
100
50
0
350
150
200
250
300
2SC4976
VCE=10V
T
a=75
C
25
C
-
-25
C
T
a=75
C
25
C
-
-25
C
2SA1875 / 2SC4976
No.5507-3/5
ITR04480
Output Capacitance, Cob -
-
pF
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
1.0
5
3
2
3
7
2
10
2
7
3
5
3
7
2
7
--1.0
--10
--100
2
5
2SA1875
f=1MHz
ITR04481
Output Capacitance, Cob -
-
pF
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
1.0
5
3
2
3
7
2
10
2
7
3
5
3
7
2
7
1.0
10
100
2
5
2SC4976
f=1MHz
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, h
FE
IT03433
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, h
FE
IT03434
IT03437
IT03438
VCE(sat) -- IC
Collector Current, IC -- mA
VBE(sat) -- IC
Collector Current, IC -- mA
VBE(sat) -- IC
Collector Current, IC -- mA
IT03435
VCE(sat) -- IC
Collector Current, IC -- mA
IT03436
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
3
5
7
--10
--100
3
2
2
3
5
7
5
10
2
5
3
5
7
100
2
3
2SA1875
VCE= --10V
Ta=75
C
25
C
--25
C
3
5
7
10
100
3
2
2
3
5
7
5
10
2
5
3
5
7
100
2
3
2SC4976
VCE=10V
Ta=75
C
25
C
--25
C
7
5
3
2
1.0
2
3
5
0.1
7
5
3
2
--1.0
2
3
5
--0.1
2
3
7
5
5
7
3
5
2
3
--10
--100
2SA1875
IC / IB=10
75
C
Ta= --25
C
10
100
2
3
7
5
5
7
3
5
2
3
2SC4976
IC / IB=10
3
5
7
--10
--100
3
2
2
3
5
7
5
--0.1
7
2
3
5
7
--1.0
2
5
7
0.1
2
3
5
7
1.0
2
3
2SA1875
IC / IB=10
Ta=75
C
--25
C
3
5
7
10
100
3
2
2
3
5
7
5
2SC4976
IC / IB=10
25
C
Ta=75
C
--25
C
25
C
25
C
75
C
Ta= --25
C
25
C
T
a= -
-25
C
25
C
75
C
2SA1875 / 2SC4976
No.5507-4/5
Collector Dissipation, P
C
--
W
Case Temperature, Tc --
C
0
14
12
10
6
8
4
2
20
0
60
40
80
100
140
120
160
PC -- Tc
ITR08233
Re
v
erse
T
ransfer Capacitance, Cre -
-
pF
Cre -- VCB
ITR04482
Collector-to-Base Voltage, VCB -- V
1.0
5
3
2
3
7
2
10
2
7
3
5
3
7
2
7
--1.0
--10
--100
2
5
2SA1875
f=1MHz
1.0
5
3
2
3
7
2
10
2
7
3
5
3
7
2
7
1.0
10
100
2
5
Re
v
erse
T
ransfer Capacitance, Cre -
-
pF
Cre -- VCB
Collector-to-Base Voltage, VCB -- V
ITR04483
2SC4976
f=1MHz
No heat sink
Collector Dissipation, P
C
--
W
Ambient Temperature, Ta --
C
0
1.0
0.8
0.6
0.4
0.2
20
0
60
40
80
100
140
120
160
PC -- Ta
ITR08232
A S O
Collector Current, I
C
-
-
mA
Collector-to-Emitter Voltage, VCE -- V
100
5
2
3
3
1000
5
2
3
7
7
5
7
10
10
2
5
3
7
5
3
7 100
2
3
ICP=600mA
10ms
DC operation
DC operation
Ta=25
C P
C =0.8W
1ms
IC=300mA
ITR08231
Tc=25
C
Single pulse
For PNP, minus sign is omitted
Gain-Brandwidth Product, f
T
--
MHz
2
2
3
3
7
5
5
2
3
7
--1.0
--10
--100
5
7
f T -- IC
Collector Current, IC -- mA
ITR04484
2SA1875
VCE= --10V
10
100
1000
2
2
7
5
3
7
5
3
2
Gain-Brandwidth Product, f
T
--
MHz
2
2
3
3
7
5
5
2
3
7
1.0
10
100
5
7
f T -- IC
Collector Current, IC -- mA
ITR04485
2SC4976
VCE=10V
10
100
1000
2
2
7
5
3
7
5
3
2
2SA1875 / 2SC4976
No.5507-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.
PS
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