2SA1968LS
No.5183-1/3
Features
High breakdown voltage(VCEO min=--900V).
Small Cob(Cob typ=2.2pF).
High reliability(Adoption of HVP process).
Package of full isolation type.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--900
V
Collector-to-Emitter Voltage
VCEO
--900
V
Emitter-to-Base Voltage
VEBO
--7
V
Collector Current
IC
--10
mA
Collector Current (Pulse)
ICP
--30
mA
Collector Dissipation
PC
2
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--900V, IE=0
--1
A
Emitter Cutoff Current
IEBO
VEB=--5V, IC=0
--1
A
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5183B
2SA1968LS
High-Voltage Amplifier,
High-Voltage Switching Applications
Package Dimensions
unit : mm
2079D
[2SA1968LS]
N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
2SA1968LS
No.5183-2/3
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.4
--1.2
IC -- VCE
IT03904
IC -- VBE(ON)
IT03906
0
0
--0.4
--0.2
--0.6
--1.0
--0.8
--2
--4
--6
--8
--10
IC -- VCE
IT03905
0
0
--4
--2
--6
--10
--8
--2
--4
--6
--8
--10
VCE= --5V
IB=0
IB=0
--1.4mA
--2.0mA
--1.0mA
--800
A
--600
A
--150
A
--100
A
--50
A
--400
A
--200
A
--1.0
--0.1
2
3
7
5
--10
2
2
3
7
5
--0.1
2
3
7
5
--1.0
2
3
2
3
7
5
--10
7
VCE(sat) -- IC
VBE(sat) -- IC
IT03908
--1.2mA
--1.6mA
--1.8mA
--5
A
--10
A
--15
A
--20
A
--40
A
--50
A
--45
A
--25
A
--30
A
--35
A
-
-40
C
25
C
T
a=120
C
2
3
7
5
100
10
2
3
7
5
--0.1
2
3
7
7
5
--1.0
2
2
3
7
5
--10
hFE -- IC
IT03907
IT03909
2
3
2
3
7
5
--1.0
--0.1
--0.1
2
3
7
5
--1.0
2
3
7
5
--10
7
2
IC / IB=5
120
C
25
C
Ta= --40
C
VCE= --5V
--40
C
25
C
Ta=120
C
IC / IB=5
--40
C
Ta=120
C
25
C
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--
mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--
mA
Base-to-Emitter ON Voltage, VBE(ON) -- V
Collector Current, I
C
--
mA
Collector Current, IC -- mA
DC Current Gain, h
FE
Collector Current, IC -- mA
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- mA
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE
VCE=--5V, IC=--1mA
20
50
Gain-Bandwidth Product
fT
VCE=--10V, IC=--1mA
6
MHz
Output Capacitance
Cob
VCB=--100V, f=1MHz
2.2
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--500
A, IB=--100
A
--1
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--500
A, IB=--100
A
--1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--100
A, IE=0
--900
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=
--900
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--100
A, IC=0
--7
V
Transient Thermal Resistance
Rth(j-c)
junction-case
8.3
C / W
2SA1968LS
No.5183-3/3
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of Novermber, 2001. Specifications and information herein are subject
to change without notice.
PS
Cob -- VCB
IT03911
Forward Bias A S O
IT03912
0
0.4
0.8
1.2
1.6
2.4
2.0
0
20
40
60
80
100
120
140
160
PC -- Ta
IT03913
2
2
--10
--1.0
3
7
5
3
7
5
--0.1
--1.0
2
3
7
7
5
--10
2
3
7
5
fT -- IC
IT03910
2
2
3
7
5
2
3
5
3
7
5
10
1.0
--1.0
2
3
7
5
--10
7
2
3
5
--100
7
2
2
3
5
--1000
7
--100
2
2
3
5
7
5
7
--1000
2
3
5
2
3
5
7
--10
--1.0
VCE= --10V
f=1MHz
100
s
10ms
1ms
500
s
ICP= --30mA
IC= --10mA
DC operation
Ambient Temperature, Ta --
C
Collector Dissipation, P
C
-
-
W
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
mA
Collector Current, IC -- mA
Gain-Bandwidth Product, f
T
-
-
MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -
-
pF
No heat sink
Ta=25
C
Single pulse
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