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Электронный компонент: 2SA2169

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2SA2169 / 2SC6017
No.8275-1/5
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
( ) : 2SA2169
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
PW
100
s
(--)13
A
Base Current
IB
(--)2
A
Collector Dissipation
PC
0.95
W
Tc=25
C
20
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)10
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)10
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)1A
200
(560)700
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(130)200
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(90)60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)250mA
(--290)180
(--580)360
mV
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)5A, IB=(--)250mA
(--)0.93
(--)1.4
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8275
32505EA TS IM TB-00001269
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
2SA2169 / 2SC6017
No.8275-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)100
A, IE=0
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)100
A, IC=0
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(70)40
ns
Storage Time
tstg
See specified Test Circuit.
(650)1000
ns
Fall Time
tf
See specified Test Circuit.
(60)80
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2045B
2044B
Switching Time Test Circuit
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
VR
RB
VCC=20V
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
100
F
470
F
PW=20
s
IB1
D.C.
1%
IB2
IC=20IB1= --20IB2=3A
For PNP, the polarity is reversed.
6mA
--5.0
--3.0
--4.5
--4.0
--3.5
--2.0
--2.5
--1.0
--1.5
--0.5
5.0
3.0
4.5
4.0
3.5
2.0
2.5
1.0
1.5
0.5
0
--0.5
0
--1.0
--1.5
--2.0
IC -- VCE
--2mA
--6mA
--8mA
--10mA
IB=0
IT08961
0.5
0
1.0
1.5
2.0
0
IC -- VCE
IB=0
2mA
4mA
8mA
10mA
20mA
12mA
14mA
16mA
IT08962
2SA2169
2SC6017
--18mA
--16mA
18mA
--12mA
--4mA
--14mA
--20mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-

A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-

A
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
2SA2169 / 2SC6017
No.8275-3/5
75
C
Ta=75
C
25
C
--25
C
1000
100
7
7
5
3
2
5
--0.01
3
2
5
--10
--0.1
7
3
2
5
7
3
2
5 7
--1.0
hFE -- IC
2SA2169
VCE= --2V
1000
100
7
7
5
3
2
5
0.01
3
2
5
10
0.1
7
3
2
5
7
3
2
5 7
1.0
IT08965
hFE -- IC
IT08966
0
0
IC -- VBE
IT08964
T
a= -
-25
C
25
C
2SA2169
VCE= --2V
--1.0
--0.8
--0.6
--0.4
--0.2
1.0
0.8
0.6
0.4
0.2
0
0
--0.2
--0.1
--0.4
--0.3
--0.6
--0.5
--0.8
--1.0
--0.7
--0.9
0.2
0.1
0.4
0.3
0.6
0.5
0.8
1.0
0.7
0.9
IC -- VBE
IT08963
75
C
T
a= -
-25
C
25
C
2SC6017
VCE=2V
Ta=75
C
25
C
--25
C
2SC6017
VCE=2V
f T -- IC
3
100
10
2
7
5
3
2
--0.01
2
5 7
3
--0.1
2
5 7
3
2
5 7
3
--1.0
--10
IT08969
2SA2169
VCE= --5V
f T -- IC
IT08970
2SC6017
VCE=5V
Cob -- VCB
3
2
2
7
5
3
100
IT08968
2SC6017
f=1MHz
Cob -- VCB
5
3
2
7
5
3
100
3
7
--0.1
2
5
2
--1.0
3
7
5
2
3
7
5
--10
3
7
0.1
2
5
2
1.0
3
7
5
2
3
7
5
10
IT08967
2SA2169
f=1MHz
3
100
10
2
7
5
3
2
0.01
2
5 7
3
0.1
2
5 7
3
2
5 7
3
1.0
10
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-

A
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-

A
Collector Current, IC -- A
DC Current Gain, h
FE
Collector Current, IC -- A
DC Current Gain, h
FE
Collector Current, IC -- A
Gain-Bandwidth Product, f
T
-
-
MHz
Collector Current, IC -- A
Gain-Bandwidth Product, f
T
-
-
MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
-
-
pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
-
-
pF
2SA2169 / 2SC6017
No.8275-4/5
VBE(sat) -- IC
3
--1.0
2
--0.01
--0.1
--10
Ta= --25
C
25
C
2
7
5
3
2
3
5
7
2
--1.0
3
5
7
2
3
5
7
2SA2169
IC / IB=50
IT08975
2SC6017
IC / IB=50
VBE(sat) -- IC
IT08976
75
C
3
1.0
2
0.01
0.1
10
Ta= --25
C
25
C
2
7
5
3
2
3
5
7
2
1.0
3
5
7
2
3
5
7
75
C
--0.01
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--10
7
5
3
2
7
5
3
2
7
5
3
2
--0.1
--1.0
--0.01
VCE(sat) -- IC
IT08973
Ta=75
C
25
C
--25
C
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
7
5
3
2
7
5
3
2
0.1
0.01
Ta=75
C
25
C
--25
C
2SA2169
IC / IB=50
VCE(sat) -- IC
IT08974
VCE(sat) -- IC
IT08972
2SC6017
IC / IB=20
--1.0
--0.1
2
3
5
7
2
3
5
7
--0.01
5
7
3
--0.01
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--10
VCE(sat) -- IC
Ta=75
C
--25
C
IT08971
2SA2169
IC / IB=20
25
C
1.0
0.1
2
3
5
7
2
3
5
7
0.01
5
7
3
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
Ta=75
C
--25
C
25
C
2SC6017
IC / IB=50
Collector Current, IC -- A
Collector Current, IC -- A
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Collector Current, IC -- A
Collector Current, IC -- A
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
0.01
1.0
7
5
3
2
7
5
3
2
0.1
3
10
5
7
3
2
2
IT09360
A S O
0.1
1.0
2
3
5
7
2
3
5
7
2
7
5
3
10
2SA2169 / 2SC6017
Tc=25
C
Single Pulse
For PNP minus sign is omitted.
ICP=13A (PW
100
s)
IC=10A
100
s
500
s
10
s
1ms
10ms
DC operation
100ms
0
0.2
0.4
0.6
0.8
1.0
0.95
0
20
40
60
80
100
120
140
160
PC -- Ta
IT09361
2SA2169 / 2SC6017
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--

A
No heat sink
Ambient Temperature, Ta --
C
Collector Dissipation, P
C
-
-
W
2SA2169 / 2SC6017
No.8275-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS
0
PC -- Tc
IT09362
5
10
20
15
25
0
20
40
60
80
100
120
140
160
2SA2169 / 2SC6017
Collector Dissipation, P
C
--
W
Case Temperature, Tc --
C