2SB920 / 2SD1236
No.1027-1/4
Applications
Large current switching of relay drivers, high-speed
inverters, converters.
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
Specifications
( ) : 2SB920
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)120
V
Collector-to-Emitter Voltage
VCEO
(--)80
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)5
A
Collector Current (Pulse)
ICP
(--)9
A
Collector Dissipation
PC
1.75
W
Tc=25
C
30
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)80V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN1027A
2SB920 / 2SD1236
Large Current Switching Applications
Package Dimensions
unit : mm
2010C
[2SB920 / 2SD1236]
92502 TS IM 8-4532
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.55
2.7
1 2
3
2SB920 / 2SD1236
No.1027-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1*
VCE=(--)2V, IC=(--)1A
70*
280*
hFE2
VCE=(--)2V, IC=(--)3A
30
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
20
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)3A, IB=(--)0.3A
(--0.5)0.4
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)1mA, IE=0
(--)120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=
(--)80
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)1mA, IC=0
(--)6
V
Turn-ON Time
ton
See specified test circuit.
(0.2)0.1
s
Storage Time
tstg
See specified test circuit.
(0.7)1.2
s
Fall Time
tf
See specified test circuit.
(0.2)0.4
s
*The 2SB920 / 2SD1236 are graded as follows by hFE at 1A :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Swicthing Time Test Circuit
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IC -- VCE
IT04407
2SB920
From top
--200mA
--180mA
--160mA
--140mA
--120mA
IB=0
IC -- VCE
IT04408
2SD1236
IB=0
--40mA
--20mA
--100mA
--80mA
--60mA
40mA
60mA
80mA
100mA
120mA
140mA
20mA
160mA
200mA
180mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
0
1
2
3
4
5
6
7
8
9
10
IC -- VCE
IT04409
2SB920
IB=0
IC -- VCE
IT04410
2SD1236
IB=0
--200mA
--100mA
--400mA
--300mA
200mA
300mA
400mA
500mA
600mA
700mA
100mA
800mA
900mA
1A
--600mA
--800mA
--900mA
1A
--500mA
--700mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
VR=10
RB=1
VCC=50V
VBE= --5V
+
+
50
INPUT
OUTPUT
RL=25
100
F
470
F
PW=20
s
IB1
D.C.
1%
IB2
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
2SB920 / 2SD1236
No.1027-3/4
VCE(sat) -- IC
IT04415
2SB920
IC / IB=10
VCE(sat) -- IC
IT04416
2SD1236
IC / IB=10
--0.01
--0.1
2
3
5
2
3
5
2
3
5
--1.0
--10
2
0.01
0.1
2
3
5
2
3
5
2
3
5
1.0
10
2
1.0
10
100
1000
5
2
3
5
2
3
5
2
3
--0.01
--0.1
2
3
5
2
3
5
2
3
5
--1.0
--10
2
--0.01
--0.1
--10
5
2
--1.0
5
2
5
2
0.01
0.1
2
3
5
2
3
5
2
3
5
1.0
10
2
0.01
0.1
10
1.0
5
2
5
2
5
2
1.0
10
100
1000
5
2
3
5
2
3
5
2
3
hFE -- IC
IT04413
hFE -- IC
IT04414
2SD1236
VCE=2V
2SB920
VCE= --2V
0
IC -- VBE
--2
--4
--6
--8
--10
--12
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
2
0
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT04411
2SB920
VCE= --2V
IC -- VBE
IT04412
2SD1236
VCE=2V
T
a=120
C
25
C
--40
C
T
a=120
C
25
C
--40
C
Ta=120
C
25
C
--40
C
Ta=120
C
25
C
--40
C
Ta=120
C
25
C
--40
C
Ta= --40
C
25
C
120
C
Ta= --40
C
25
C
120
C
Ta=120
C
25
C
--40
C
VBE(sat) -- IC
IT04417
2SB920
IC / IB=10
VBE(sat) -- IC
IT04418
2SD1236
IC / IB=10
--0.01
--0.1
2
3
5
2
3
5
2
3
5
--1.0
--10
2
--0.1
--1.0
5
2
3
5
2
3
0.1
1.0
5
2
3
5
2
3
0.01
0.1
2
3
5
2
3
5
2
3
5
1.0
10
2
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
DC Current Gain, h
FE
Collector Current, IC -- A
Collector Current, IC -- A
DC Current Gain, h
FE
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Collector Current, IC -- A
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
2SB920 / 2SD1236
No.1027-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2002. Specifications and information herein are subject
to change without notice.
PS
--1.0
--10
2
5
3
7
--100
2
5
3
7
A S O
3
--1.0
--10
5
7
3
2
--0.1
5
7
5
7
3
2
2
IT04419
10ms
1ms
DC operation
1ms to 10ms : Single pulse
2SB920
IC= --5A
ICP= --9A
100ms
1.0
10
2
5
3
7
100
2
5
3
7
A S O
3
1.0
10
5
7
3
2
0.1
5
7
5
7
3
2
2
IT04420
10ms
1ms
DC operation
2SD1236
IC=5A
ICP=9A
100ms
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
1ms to 10ms : Single pulse
IT04479
PC -- Ta
Ambient Temperature, Ta --
C
Collector Dissipation, P
C
-
-
W
IT05325
0
100
20
60
40
80
120
140
160
0
5
15
25
30
20
10
35
2SB920 / 2SD1236
PC -- Tc
Case Temperature, Tc --
C
Collector Dissipation, P
C
-
-
W
0
100
20
60
40
80
120
140
160
0
1.75
1.5
1.0
0.5
2.0
No heatsink
2SB920 / 2SD1236
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