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Электронный компонент: 2SD1913

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2SB1274/2SD1913
No.2246-1/4
Applications
General power amplifier.
Features
Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
Micaless package facilitating mounting.
Specifications
( ):2SB1274
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(
-
)60
V
Collector-to-Emitter Voltage
VCEO
(
-
)60
V
Emitter-to-Base Voltage
VEBO
(
-
)6
V
Collector Current
IC
(
-
)3
A
Collector Current (Pulse)
ICP
(
-
)8
A
Collector Dissipation
PC
2
W
Tc=25
C
20
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-
55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)100
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)100
A
Continued on next page.
Ordering number : ENN2246B
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Package Dimensions
unit : mm
2041A
[2SB1274/2SD1913]
D2000 TS IM 8-2055
PNP/NPN Epitaxial Planar Silicon Transistors
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
2
3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SB1274/2SD1913
No.2246-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1
VCE=(--)5V, IC=(--)0.5A
70*
280*
hFE2
VCE=(--)5V, IC=(--)3A
20
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)0.5A
100
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(60)40
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)0.2A
(--)0.4
(--)1
V
Base-to-Emitter Voltage
VBE
VCE=(--)5V, IC=(--)0.5A
(--)0.8
(--)1
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)1mA, IE=0
(--)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=
(--)60
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)1mA, IC=0
(--)6
V
* : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
IT02818
IC -- VBE
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
--2.0
--2.4
--1.6
--1.2
--0.4
--0.8
--2.8
--3.2
--3.6
2SB1274
VCE= --5V
IT02819
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.6
3.2
2SD1913
VCE=5V
IT02816
IC -- VCE
0
--2
--1
--4
--3
--5
--6
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
IB=0
--10mA
--5mA
--20mA
--25mA
--35mA
--50mA
--45mA
--40mA
--30mA
--15mA
IT02817
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
0
2
1
4
3
5
6
0
0.5
1.0
1.5
2.0
2.5
3.0
IB=0
2SB1274
2SD1913
10mA
15mA
20mA
50mA
25mA
40mA
45mA
30mA
5mA
35mA
Ta=120
C
25
C
--40
C
T
a=120
C
25
C
--40
C
Collector Current, I
C
-
-

A
Collector Current, I
C
--

A
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
--

A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--

A
2SB1274/2SD1913
No.2246-3/4
IT02824
VCE(sat) -- IC
--0.1
2
7 --0.01
3
5
--1.0
7
2
3
2
3
5
7
5
--0.01
--0.1
--1.0
5
7
2
3
2
5
7
7
3
2
Ta=
120
C
--40
C
25
C
Base-to-Emitter
Saturation V
oltage, V
BE
(sat)
--

V
IT02827
VBE(sat) -- IC
IT02825
VCE(sat) -- IC
IT02826
VBE(sat) -- IC
5
7
--1.0
--0.1
7 --0.01
2
3
5
7
2
3
2
3
5
--1.0
5
7
2
3
--10
5
7
3
2
Collector Current, IC -- A
IT02822
f T -- IC
--0.1
--0.01
--1.0
2
7
3
7
5
2
7
3
2
3
5
5
100
3
5
3
2
2
10
7
7
5
Gain-Bandwidth Product, f
T
-
-
MHz
f T -- IC
IT02823
2SB1274
VCE= --5V
2SB1274
IC / IB=10
2SB1274
IC / IB=
10
0.1
0.01
1.0
2
3
5
5
2
3
5
2
3
5
100
3
5
3
2
2
10
7
7
5
2SD1913
VCE=5V
0.1
2
7 0.01
3
5
1.0
7
2
3
2
3
5
7
5
0.01
0.1
1.0
5
7
2
3
2
5
7
7
3
2
Ta=
120
C
--40
C
25
C
2SD1913
IC / IB=
10
Ta=
120
C
--40
C
25
C
5
7
1.0
0.1
7 0.01
2
3
5
7
2
3
2
3
5
1.0
5
7
2
3
10
5
7
3
2
Ta=
--40
C
120
C
25
C
2SD1913
IC / IB=10
Base-to-Emitter
Saturation V
oltage, V
BE
(sat)
--

V
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat)
--

V
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat)
--
V
Collector Current, IC -- A
Collector Current, IC -- A
Gain-Bandwidth Product, f
T
-
-
MHz
Collector Current, IC -- A
IT02820
hFE -- IC
--0.1
7 --0.01
--1.0
2
3
7
5
2
3
2
3
7
5
5
100
1000
5
3
2
7
5
3
7
2
IT02821
hFE -- IC
DC Current Gain, h
FE
2SD1913
VCE=5V
2SB1274
VCE= --5V
0.1
7 0.01
1.0
2
3
7
5
2
3
2
3
7
5
5
100
1000
5
3
2
7
5
3
7
2
Ta=120
C
25
C
--40
C
Ta=120
C
25
C
--40
C
Collector Current, IC -- A
DC Current Gain, h
FE
Collector Current, IC -- A
2SB1274/2SD1913
No.2246-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject
to change without notice.
PS
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
PC -- Tc
IT02830
2SB1274 / 2SD1913
No heat sink
0
20
40
60
80
100
120
140
160
0
0.5
1.0
2.0
2.5
1.5
Ambient Temperature, Ta
--
C
Case Temperature, Tc
--
C
PC -- Ta
Collector Dissipation, P
C
--
W
Collector Dissipation, P
C
--
W
IT02831
2SB1274 / 2SD1913
IT02828
A S O
10ms
1ms
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
--10
--100
--1.0
2
--10
--0.1
ICP= --8A
IC= --3A
ICP=8A
IC=3A
DC operation
100ms
IT02829
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--

A
2SB1274
2SD1913
100
s
500
s
10ms
1ms
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
10
100
1.0
2
10
0.1
DC operation
100ms
100
s
500
s
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--

A