2SK1459LS
No.3462-1/4
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900
V
Gate-to-Source Voltage
VGSS
30
V
Drain Current (DC)
ID
2.5
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
5
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
30
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
900
V
Zero-Gate Voltage Drain Current
IDSS
VDS=900V, VGS=0
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=
30V, VDS=0
100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.0
V
Forward Transfer Admittance
yfs
VDS=20V, ID=1.5A
0.8
1.5
S
Marking : K1459
Continued on next page.
Features
Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3462B
2SK1459LS
Package Dimensions
unit : mm
2078C
[2SK1459LS]
N3001 TS IM TA-3433 / 61599 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
2SK1459LS
No.3462-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1.5A, VGS=10V
4.7
60
Input Capacitance
Ciss
VDS=20V, f=1MHz
350
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
100
pF
Turn-ON Delay Time
td(on)
ID=1.5A, VGS=10V, VDD=200V, RGS=50
15
ns
Rise Time
tr
ID=1.5A, VGS=10V, VDD=200V, RGS=50
25
ns
Turn-OFF Delay Time
td(off)
ID=1.5A, VGS=10V, VDD=200V, RGS=50
120
ns
Fall Time
tf
ID=1.5A, VGS=10V, VDD=200V, RGS=50
40
ns
Diode Forward Voltage
VSD
IS=2.5A, VGS=0
1.8
V
(Note) Be careful in handling the 2SK1459LS because it has no protection diode between gate and source.
Switching Time Test Circuit
0
ID -- VGS
2
1
5
4
3
0
0
2
8
6
12
10
14
4
0
ID -- VDS
4
3
2
1
12
4
8
24
16
20
6V
5V
4V
V GS
=10V
ITR01582
0
0
ID -- VDS
6
5
4
3
1
2
30
10
20
60
40
50
5V
6V
4V
V GS
=10V
ITR01583
ITR01584
VDS=20V
Tc=
--25
C
25
C
75
C
--60
--40
--20
ID -- Tc
2
1
5
4
3
0
20
0
60
40
160
140
120
100
80
ITR01585
VGS=10V
V
DS =20V
10V
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
C
Drain Current, I
D
--
A
PW=1
s
D.C.
0.5%
P.G
RGS
50
G
S
D
ID=1.5A
RL=133
VDD
200V
VOUT
2SK1459LS
VGS
10V
2SK1459LS
No.3462-3/4
A S O
1.0
0.1
5
7
10
7
3
2
3
5
3
2
5
7
2
10
2
3
5
7
100
2
2
3
5
7
1000
2
3
5
7
ITR01593
ID=2.5A
IDP=5A
2
3
5
0.1
1.0
7
2
3
5
10
7
SW Time -- ID
2
3
5
100
2
3
5
7
10
5
7
ITR01587
VDD=200V
VGS=10V
P.W.=1
s
D.C
0.5%
td(off)
td(on)
tr
tf
ITR01590
1.0
0.1
5
3
2
7
5
3
2
3
2
5
7
3
2
5
1.0
5
7
0.1
y
fs
-- ID
V
DS
=10V
20V
0
Ciss, Coss, Crss -- VDS
3
7
2
5
100
3
7
2
5
1000
3
2
5
8
12
16
32
24
28
20
4
ITR01592
VGS=0
f=1MHz
Ciss
Coss
Crss
Operation in
this area is
limited by RDS(on).
ITR01589
--60
--20
--40
0
40
20
80
60
120
100
160
140
RDS(on) -- Tc
14
6
4
10
12
8
2
0
I D
=1.5A, V
GS
=10V
I D
=1.5A, V
GS
=20V
1ms
10ms
100ms
DC operation
100
s
10
s
ITR01588
0
RDS(on) -- VGS
11
10
7
4
9
8
6
5
3
2
4
12
14
8
2
10
6
Tc=25
C
ID=1.5A
--60
--40
--20
VGS(off) -- Tc
2
1
5
4
3
0
20
0
60
40
160
140
120
100
80
ITR01586
Tc=
25
C
ITR01591
1.0
0.1
5
3
2
7
5
3
2
3
2
5
7
7
3
2
5
1.0
10
5
7
0.1
y
fs
-- ID
Tc= -
-25
C
25
C
75
C
VDS=20V
<5
s
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Case Temperature, Tc --
C
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
Tc=25
C
Single pulse
Cutof
f V
oltage, V
GS
(of
f)
--
V
Case Temperature, Tc --
C
VDS=10V
ID=1mA
2SK1459LS
No.3462-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS
ITR01594
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20
40
60
80
100
120
140
160
PD -- Ta
ITR01595
32
24
28
30
20
16
12
8
4
0
0
20
40
60
80
100
120
140
160
PD -- Tc
Ambient Temperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
--
W
Allo
w
able Po
wer Dissipation, P
D
--
W
Case Temperature, Tc --
C
No heat sink
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