990929TM2fXHD
2SK1902
Absolute Maximum Ratings / Ta=25
C
Drain to Source Voltage
100
Gate to Source Voltage
20
Drain Current (DC)
15
Drain Current (Pulse)
60
Channel Temperature
150
Storage Temperature
--55 to +150
Allowable power Dissipation
60
V
V
A
A
C
C
W
Electrical Characteristics / Ta=25
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
min typ max unit
100
100
10
V
A
A
Cutoff Voltage
Static Drain to Source on State Resistance
1.0
11.5
100
V
S
m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1230
200
pF
pF
Turn-ON Delay Time
40
pF
Rise Time
Turn-oFF Delay Time
Fall Time
14
21
230
ns
ns
ns
Diode Forward Voltage
ns
2.0
7
135
1.5
V
90
1.0
Switching Time Test Circuit
VDSS
VGSS
ID peak
IDP
PD
Tch
Tstg
V(BR)DSS
ID=1mA , VGS=0
Gate to Source Breakdown Voltage
20
V
V(BR)GSS
IG=
100
A , VDS=0
IDSS
VDS=100V , VGS=0
IGSS
VGS=
100V , VDS=0
VGS(Off)
VDS=16V , ID=1mA
| yfs |
VDS=10V , ID=7A
RDS(On)
ID=7A , VGS=10V
135
m
180
RDS(On)
ID=7A , VGS=4V
Ciss
VDS=20V , f=1MHz
Coss
VDS=20V , f=1MHz
Crss
VDS=20V , f=1MHz
td(On)
tr
td(Off)
tf
VSD
IS =15A , VGS = 0
TENTATIVE
unit
Forward Transfer Admittance
Case Outline
TO-220(unit;mm)
Features and Applications
Low ON-state resistance.
Very high speed switching.
Low voltage drive.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
See Specified Test
Circuit
50
P.G
S
G
VIN
D
VOUT
VDD=50V
ID=7A
RL=7.14
PW=1
S
D.C.
0.5%
VIN
10V
0V
RGS
Specifications and information herein are subject to change without notice.
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
PW
10
S, dutycycle
1%
(Tc=25
C)
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.55
2.7
1
2
3
Elecrical Connection
S
G
D
1 : Gate
2 : Drain
3 : Source
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