Specifications and information herin are subject to change without notice.
951214TM2fXHD
Absolute Maximum Ratings / Ta=25
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
V
V
A
A
W
C
C
Electrical Characteristics / Ta=25
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
TENTATIVE
PW
10
S. dutycycle
1%
Mounted on ceramic board
(1000mm !0.8mm)
unit
Features and Applications
Low ON-state resistance.
high-speed switching.
4V drive.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
30
20
7
48
2.0
150
--55 to +150
min typ max unit
30
1.0
8
V
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=
16V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=7A
ID=7A , VGS=10V
ID=4A , VGS=4V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
See Specified Test Circuit .
IS = 7A , VGS = 0
2
2SK2442
N- Channel Silicon MOS FET
Very High-Speed Switching Applications
Case Outline (unit:mm)
12
24
34
1000
780
220
15
220
190
230
1.0
100
10
2.5
29
48
1.2
1
4
3
5
6
7
8
2
0.43
5.0
1.27
1.5
0.1
4.4
6.0
0.15
0.3
1.8max
1:Source
2:Source
3:Source
4:Gate
5:Drain
6:Drain
7:Drain
8:Drain
SOP8(unit:mm)
50
P.G
2SK2442
S
G
D
VOUT
VDD=15V
VIN
ID=7A
RL=2.1
PW=10
S
D.C.
1%
VIN
10V
0V
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