960329TM2fXHD
2SK2618LS
Absolute Maximum Ratings / Ta=25
C
Electrical Characteristics / Ta=25
C
Switching Time Test Circuit
TENTATIVE
Case Outline
Features and Applications
Low ON-state resistance.
Low Qg
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
50
P.G
2SK2618LS
S
G
D
VOUT
VDD=200V
ID=3A
RL=66.7
PW=1
S
D.C.
0.5%
VGS=15V
RGS
Specifications and information herein are subject to change without notice.
3.5
7.2
16.0
16.1
3.6
10.0
0.9
1.2
14.0
0.75
4.5
2.8
0.6
0.7
2.4
2.55
2.55
1
2
3
TO-220FI(LS)
(unit:mm)
3.2
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
500
30
5
20
30
150
--55 to +150
V
V
A
A
W
C
C
min typ max unit
500
3.5
1.5
V
mA
nA
V
S
pF
pF
pF
nC
ns
ns
ns
ns
V
(Tc=25
C)
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=500V , VGS=0
VGS=
30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=3A
ID=3A , VGS=15V
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
GS=10V
See Specified Test
Circuit
IS =5A , VGS = 0
unit
3.0
0.95
700
250
120
20
20
20
50
25
1.0
100
5.5
1.25
1.2
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
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