HD 010711
Absolute Maximum Ratings / Ta=25
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
600
30
1.5
6
20
150
--55 to +150
V
V
A
A
W
C
C
Electrical Characteristics / Ta=25
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
min typ max unit
600
3.5
0.5
1.0
100
5.5
5.5
1.2
V
mA
nA
V
S
pF
pF
pF
nC
ns
ns
ns
ns
V
1.0
4.2
300
90
45
8
9
12
20
17
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=600V , VGS=0
VGS=30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=0.8A
ID=0.8A , VGS=15V
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=1.5A
VGS=10V
See Specified Test
Circuit
IS=1.5A , VGS=0
TENTATIVE
unit
Features and Applications
Low ON-state resistance.
Low Qg.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
Specifications and information herein are subject to change without notice.
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
(Tc=25C)
50
P.G
2SK2678LS
S
G
D
VOUT
VDD=200V
ID=0.8A
RL=250
PW=1 S
D.C.0.5%
VGS=15V
RGS
2SK2678LS
Package Dimensions
TO-220FI(LS) (unit:mm)
16.0
14.0
7.2
1.2
0.9
3.6
0.75
16.1
0.7
2.4
0.6
1.2
2.55
2.55
1 2 3
10.0
4.5
2.8
3.2
3.5
1 : Gate
2 : Drain
3 : Source
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