HD 010711
2SK3241LS
Absolute Maximum RatingsTa=25
Drain to Source Voltage
Gate to Source Voltage
Drain CurrentDC
Drain CurrentPulse
Allowable power Dissipation
Channel Temperature
Storage Temperature
600
30
4
16
30
150
-55150
V
V
A
A
W
Electrical CharacteristicsTa=25
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
min typ max unit
600
2.5
1.5
250
100
3.5
2.2
1.5
V
A
nA
V
S
pF
pF
pF
nC
ns
ns
ns
ns
V
3.8
1.8
510
87
29
19
13
22
77
32
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD (TC25)
Tch
Tstg
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID1mA , VGS0
VDS600V , VGS0
VGS30V , VDS0
VDS10V , ID1mA
VDS10V , ID2A
ID2A , VGS10V
VDS20V , f1MHz
VDS20V , f1MHz
VDS20V , f1MHz
VDS200V , ID2A
VGS10V
See Specified Test
Circuit
IS2A , VGS0
TENTATIVE
unit
Case Outline
Features and Applications
Low ON-state resistance.
Low Qg
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
50
P.G
2SK3241LS
S
G
D
VOUT
VDD200V
ID2A
RL100
PW1S
D.C.0.5%
VGS=10V
RGS
Specifications and information herein are subject to change without notice.
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
(Note) Be careful in handling the 2SK3241 because it has no protection diode between gate and source.
1Gate
2Drain
3Source
16.0
14.0
7.2
1.2
0.9
3.6
0.75
16.1
0.7
2.4
0.6
1.2
2.55
2.55
1 2 3
10.0
4.5
2.8
TO-220FI (LS)unit:mm
3.2
3.5
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