981029TM2fXHD
2SK3248
Absolute Maximum Ratings/Ta=25
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
600
30
8
32
105
150
-
55to
+
150
V
V
A
A
W
C
C
Electrical Characteristics/Ta=25
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
min typ max unit
600
2.5
2.4
250
100
3.5
1.2
1.5
V
A
nA
V
S
pF
pF
pF
nC
ns
ns
ns
ns
V
5.5
0.9
1050
170
58
40
18
40
142
53
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD (TC=25
C
)
Tch
Tstg
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=mA , VGS=0
VDS=600V , VGS=0
VGS=
30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=4A
ID=4A , VGS=10V
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=4A
VGS=10V
See Specified Test
Circuit
IS=4A , VGS=0
TENTATIVE
unit
Case Outline
Features and Applications
Low ON-state resistance.
Low Qg
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
50
P.G
2SK3248
S
G
D
VOUT
VDD
=
200V
ID
=
4A
RL
=
50
PW
=
1
S
D.C.
0.5%
VGS
=
10V
RGS
Specifications and information herein are subject to change without notice.
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
(Note) Be careful in handling the 2SK3248 because it has no protection diode between gate and source.
15.6
2.6
3.5
1.2
14.0
30
1.6
1.0
2.0
0.6
20.0
20.0
15.0
1.3
3.2
4.8
2.0
1.4
0.6
5.45
5.45
1.4
1
2
3
1:Gate
2:Drain
3:Source
TO-3PB(uni:mm)
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