Specifications and information herin are subject to change without notice.
981022TM2fXHD
Absolute Maximum Ratings / Ta=25
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
V
V
A
A
W
C
C
Electrical Characteristics / Ta=25
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
TENTATIVE
(TC=25
C)
unit
Features and Applications
Low ON-state resistance.
Low Qg.
900
30
10
30
150
150
--55 to
150
min typ max unit
900
2.5
4.8
V
A
nA
V
S
pF
pF
pF
nC
ns
ns
ns
ns
V
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=900V , VGS=0
VGS=
30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=5A
ID=5A , VGS=10V
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
VGS=10V
See Specified Test
Circuit
IS=5A , VGS = 0
N- Channel Silicon MOS FET
Very High-Speed Switching Applications
8.0
1.05
2200
215
53
88
32
63
320
73
250
100
3.5
1.4
1.5
50
P.G
2SK3260
S
G
D
VOUT
VDD=200V
RGS
ID=5A
RL=40
VGS=10V
PW=1
S
D.C.
0.5%
2SK3260
(Note) Be careful in handling the2SK32460 because it has no protection diode between gate and source.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
Package Dimensions
15.6
3.2
14.0
30
1.6
2.0
1.0
3.5
2.6
15.0
1.2
1.3
20.0
20.0
4.8
2.0
1.4
0.6
0.6
5.45
5.45
1
2
3
1.4
TO-3PB(unit:mm)
1 : Gate
2 : Drain
3 : Source
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