2SK3278
No.6680-1/4
Features
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6680
2SK3278
Package Dimensions
unit : mm
2083B
[2SK3278]
N3000 TS IM TA-2613
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
20
V
Continued on next page.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
[2SK3278]
unit : mm
2092B
2SK3278
No.6680-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Drain Current (DC)
ID
15
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
45
A
Allowable Power Dissipation
PD
1
W
Tc=25
C
15
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Rathings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
|yfs|
VDS=10V, ID=7A
7
10
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=7A, VGS=10V
27
36
m
RDS(on)2
ID=4A, VGS=4.5V
40
56
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
530
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
170
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
90
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
130
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
40
ns
Fall Time
tf
See specified Test Circuit
60
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=15A
10
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=15A
1.5
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=15A
1.0
nC
Diode Forward Voltage
VSD
IS=15A, VGS=0
1.0
1.2
V
Marking : K3278
Switching Time Test Circuit
PW=10
s
D.C.
1%
10V
0V
VIN
P.G
50
G
S
2SK3278
ID=7A
RL=2.1
VDD=15V
VOUT
VIN
D
0
2.5
1.5
2.0
4.0
3.5
3.0
0.5
1.0
10
6
7
8
9
5
4
3
2
1
0
0
1.0
1.2
0.2
0.4
0.6
0.8
Tc=75
C
--25
C
VDS=10V
10
6
7
8
9
5
4
3
2
1
0
10.0V
3.5V
3.0V
4.5V
6.0V
VGS=2.5V
IT02555
IT02556
8.0V
25
C
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
2SK3278
No.6680-3/4
0.01
2 3
5 7
2
2
2
3
3
3
5
5
5
7
7
7
0.1
1.0
10
100
10
1000
100
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
0.3
0.5
0.7
0.9
1.1
12
10
8
6
2
4
0
4
5
6
7
8
9
2
3
1
11
10
VDS=10V
ID=7A
0
5
10
15
20
25
30
Ciss
Coss
Crss
VGS=0
2
3
5
7
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
0.001
25
C
--25
C
Tc=75
C
100
10
1.0
0.1
0.1
1.0
10
2
2
3
5
7
5
7
2
3
2
3
5
7
5
7
2
3
3
5
7
VDS=10V
75
C
Tc= -
-25
C
0
IT02559
IT02561
IT02560
IT02562
25
C
f=1MHz
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
100
0.1
IT02564
0.1
2
3
5
7
1.0
2
3
5
7
10
10
1.0
100
7
7
5
5
3
3
2
2
1000
7
5
3
2
VDD=15V
VGS=10V
td(on)
td(off)
tf
tr
IT02563
--60
80
60
20
40
160
120
140
100
--40
--20
0
0
4
8
12
16
20
2
6
10
14
18
60
70
80
50
40
30
20
10
0
V GS
=4.5V
, I D
=4A
VGS
=10V
, ID=7A
60
50
55
35
40
45
25
30
5
10
15
20
0
7A
IT02557
IT02558
Tc=25
C
ID=4A
DC operation
100
s
1ms
10ms
ID=15A
IDP=45A
Operation in this
area is limited by RDS(on).
RDS(on) -- VGS
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
C
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
-
-
V
Ciss, Coss, Crss -- VDS
Drain-to-Source-Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
|
y
fs| -- ID
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
|
y
fs| -
-
S
IF -- VSD
Diode Forward Voltage, VSD -- V
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
F
orw
ard Drain Current, I
F
-
-
A
<10
s
Tc=25
C
Single pulse
2SK3278
No.6680-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
PS
0
0
20
40
60
80
100
120
140
160
IT02565
0.4
0.6
0.2
0.8
1.0
1.2
0
0
20
40
60
80
100
120
140
160
IT02566
10
5
15
20
25
Amibient Tamperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
PD -- Ta
Case Tamperature, Tc --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
PD -- Tc
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