Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6436
2SK3280
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2615 No.64361/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
Package Dimensions
unit:mm
2083B
[2SK3280]
Features
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit:mm
2092B
[2SK3280]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
2SK3280
No.64363/4
--50
75
25
50
150
125
100
--25
0
0
4
8
12
16
20
2
6
10
14
18
0
2.5
1.5
2.0
4.0
3.5
3.0
0.5
1.0
20
12
14
16
18
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
Tc=75
C
--25
C
60
50
40
30
20
10
0
RDS(on) -- Tc
VGS
=4.5V
, ID=4A
VGS=10.0V
, ID=10A
60
50
55
35
40
45
25
30
5
10
15
20
0
RDS(on) -- VGS
10A
ID -- VGS
VDS=10V
10
6
7
8
9
5
4
3
2
1
0
ID -- VDS
10.0V
3.0V
3.5V
VGS=2.5V
6.0V
4.5V
IT01822
IT01824
IT01823
IT01825
Tc=25
C
ID=4A
8.0V
25
C
Drain Current,
I
D
A
Drain-to-Source Voltage, V
DS
V
Drain Current,
I
D
A
Gate-to-Source Voltage, V
GS
V
Gate-to-Source Voltage, V
GS
V
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
m
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
m
Case Temperature, Tc C
10
10000
100
7
5
3
2
1000
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
0.3
0.5
0.7
0.9
1.1
10
9
8
7
6
5
4
3
2
1
0
4
5
6
7
8
9
10 11 12 13 14 15 16
1
2
3
17
VGS -- Qg
VDS=10V
ID=20A
0
5
10
15
20
25
30
Ciss, Coss, Crss -- VDS
Ciss
Coss
Crss
VGS=0
100
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01
0.001
IF -- VSD
25
C
--25
C
Tc=75
C
100
10
1.0
0.1
0.1
10
1.0
2
2
3
5
7
2
3
5
7
2
3
5
7
3
5
7
2
3
5
7
y
fs
-- ID
VDS=10V
75
C
Tc= -
-25
C
0
IT01826
IT01828
IT01827
IT01829
25
C
f=1MHz
Forward Transfer Admittance,
|
y
f
s|
S
Drain Current, I
D
A
Forward Current,
I
F
A
Diode Forward Voltage, VSD V
Ciss, Coss, Crss
p
F
Gate-to-Source Voltage,
V
GS
V
Drain-to-Source Voltage, V
DS
V
Total Gate Charge, Qg nC
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
2SK3280
PS No.64364/4
0.01
2 3
5 7
2
2
2
3
3
3
5
5
5
7
7
7
0.1
1.0
10
100
A S O
DC operation
<10
s
100
s
1ms
10ms
IDP=45A
ID=20A
2
3
5
7
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
100
0.1
0.01
IT01831
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
PD -- Ta
IT01832
0.1
2
3
5
7
2
2
3
3
5
7
1.0
10
10
1.0
100
7
7
5
5
3
3
2
2
0.5
1.0
1.5
1000
7
5
3
2
SW Time -- ID
VDD=15V
VGS=10V
td(on)
td(off)
t r
tf
IT01830
0
10
5
15
20
25
30
35
40
PD -- Tc
IT01833
Operation in this
area is limited by RDS(on).
Switching
Time,
SW
Time
n
s
Drain Current, I
D
A
Drain Current
,I
D
A
Drain-to-Source Voltage, V
DS
V
Allowable Power Dissipation,
P
D
W
Ambient Temperature, Ta C
Tc=25
C
Single pulse
Allowable Power Dissipation,
P
D
W
Case Temperature, Tc C
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