3LN03SS
No.8231-1/4
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage (*1)
VGSS
10
V
Drain Current (DC)
ID
0.35
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
1.4
A
Allowable Power Dissipation
PD
0.15
A
Channel Temperature
Tch
150
A
Storage Temperature
Tstg
--55 to +150
W
(
*
1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=8V, VDS=0
1
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100
A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=180mA
0.36
0.6
S
RDS(on)1
ID=180mA, VGS=4V
0.7
0.9
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=90mA, VGS=2.5V
0.8
1.15
RDS(on)3
ID=10mA, VGS=1.5V
1.6
2.4
Input Capacitance
Ciss
VDS=10V, f=1MHz
30
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
7
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
3.5
pF
Marking : YG
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8231
22805PE TS IM TA-100963
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3LN03SS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
3LN03SS
No.8231-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
4.5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
11
ns
Fall Time
tf
See specified Test Circuit.
6
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=350mA
1
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=350mA
0.4
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=4V, ID=350mA
0.2
nC
Diode Forward Voltage
VSD
IS=350mA, VGS=0
0.88
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm
2179A
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
0.6
0.25
0.2
0.07
0.07
1.4
0.45
1
3
2
0.3
0.3
1.4
0.8
0.1
1
3
2
Top View
Side View
Side View
Bottom View
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=180mA
RL=83
VDD=15V
VOUT
3LN03SS
VIN
4V
0V
VIN
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT07512
Ambient Temperature, Ta --
C
RDS(on) -- Ta
IT08161
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
--
A
IT07510
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, I
D
--
A
IT07511
0.1
1.0
0
1.0
0
0.5
0
0.2
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.1
0.2
0.3
0.4
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
T
a= -
-25
C
--25
C
25
C
25
C
T
a=75
C
75
C
VDS=10V
2.0
3.0
4.0
5.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Ta=25
C
ID=90mA
180mA
--40
--60
--20
0
20
40
60
80
100
120
140
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
6.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS=1.5V
ID=90mA, V
GS
=2.5V
ID=180mA, V
GS
=4.0V
3LN03SS
No.8231-3/4
0
0
1.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source V
oltage, V
GS
--
V
IT07518
IT07520
IT07521
RDS(on) -- ID
Drain Current, ID -- A
3
5
7
1.0
2
3
2
3
5
7
2
3
5
7
0.01
0.1
1.0
IT07519
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
2
0.1
2
3
1.0
5
7
2
10
3
5
7
3
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
IT07516
IT07515
Diode Forward Voltage, VSD -- V
IF -- VSD
Drain Current, ID -- A
IT07514
0.01
0.1
0.1
2
3
5
7
2
3
5
7
1.0
7
5
3
3
2
2
7
5
1.0
Forward T
ransfer
Admittance,
y
fs
-
-
S
y
fs
-- ID
0.8
1.0
0.6
1.2
1.4
0.4
0.2
0.01
1.0
0.1
7
5
3
2
7
5
3
3
2
2
Forward Current, I
F
--
A
VDS=10V
25
C
Ta= -
-25
C
75
C
VGS=0
--25
C
25
C
VDD=15V
VGS=4V
td(off)
tf
td(on)
tr
VDS=10V
ID=0.35A
Ta=
75
C
25
C
--
25
C
VGS=4V
RDS(on) -- ID
Drain Current, ID -- A
3
5
7
1.0
2
3
2
3
5
7
2
3
5
7
0.01
0.1
1.0
RDS(on) -- ID
Drain Current, ID -- A
5
7
2
3
1.0
5
7
2
3
5
7
2
3
0.01
0.1
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Ta
=
75
C
Ta=
75
C
--
25
C
25
C
VGS=2.5V
VGS=1.5V
Ta=
75
C
--25
C
25
C
0
30
10
15
20
25
5
IT08960
1.0
100
7
2
3
10
5
7
2
3
5
Ciss
Coss
Crss
3LN03SS
No.8231-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS
0
0
20
40
60
80
100
120
0.05
0.10
0.15
0.20
140
160
Ambient Temperature, Ta --
C
PD -- Ta
IT07522
Allowable Power Dissipation, P
D
--
W
Note on usage : Since the 3LN03SS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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