5LN01C
No.6555-1/4
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
50
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current (DC)
ID
0.1
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
0.4
A
Allowable Power Dissipation
PD
0.25
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
50
V
Zero-Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0
10
A
Gate-to-Sourse Leakage Current
IGSS
VGS=
8V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100
A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=50mA
0.13
0.18
S
RDS(on)1
ID=50mA, VGS=4V
6
7.8
Static Drain-to-Sourse on-State Resistance
RDS(on)2
ID=30mA, VGS=2.5V
7.1
9.9
RDS(on)3
ID=10mA, VGS=1.5V
10
20
Marking : YB
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6555
5LN01C
Package Dimensions
unit : mm
2091A
[5LN01C]
71400 TS IM TA-2050
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0.8
1.1
2
3
1
5LN01C
No.6555-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
6.6
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
4.7
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
1.7
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
18
ns
Rise Time
tr
See specified Test Circuit
42
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
190
ns
Fall Time
tf
See specified Test Circuit
105
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=100mA
1.57
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=100mA
0.20
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=100mA
0.32
nC
Diode Forward Voltage
VSD
IS=100mA, VGS=0
0.85
1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
1%
4V
0V
VIN
P.G
50
G
S
D
ID=50mA
RL=500
VDD=25V
VOUT
5LN01C
VIN
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
0
0
0.02
0.01
0.04
0.03
0.06
0.05
0.08
0.07
0.2
0.10
0.09
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
-
-
A
3.5V
6.0V
2.0V
2.5V
4.0V
3.0V
0
0.5
1.0
1.5
2.0
3.0
2.5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, I
D
-
-
A
VDS=10V
T
a= -
-25
C
75
C
25
C
0
1
2
6
7
8
9
10
11
12
3
4
5
6
2
3
4
5
7
8
9
10
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ta=25
C
0.01
1.0
0.1
2
3
5
7
2
10
7
5
3
2
100
7
5
3
2
3
Drain Current, ID -- A
RDS(on) -- ID
VGS=4V
--25
C
25
C
Ta=75
C
IT00054
IT00055
IT00056
IT00057
VGS=1.5V
ID=30mA
50mA
5LN01C
No.6555-3/4
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.01
0.1
3
2
7
5
3
2
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
IF -- VSD
VGS=0
25
C
--25
C
T
a=75
C
0
5
10
10
15
100
7
5
3
2
7
5
3
2
1.0
20
25
30
35
40
45
50
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
Ciss
Coss
Crss
f=1MHz
0.01
10
0.1
2
3
5
7
1000
100
7
5
3
2
7
5
3
2
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
VDD=25V
VGS=4V
td(off)
td(on)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source V
oltage, V
GS
-
-
V
VDS=10V
ID=100mA
IT00062
IT00063
IT00064
IT00065
tr
tf
--60
0
2
4
6
8
10
12
14
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
C
RDS(on) -- Ta
I D
=30mA, V
GS
=2.5V
I D
=50mA, V
GS
=4.0V
0.01
0.01
0.1
2
3
5
7
2
1.0
0.1
7
5
3
2
7
5
3
2
3
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
yfs
-
-
S
yfs
-- ID
VDS=10V
IT00060
IT00061
Ta= -
-25
C
25
C
75
C
0.01
1.0
0.1
2
3
5
7
2
10
7
5
3
2
100
7
5
3
2
3
Drain Current, ID -- A
RDS(on) -- ID
VGS=2.5V
--25
C
25
C
Ta=75
C
0.001
1.0
0.01
2
3
5
7
2
10
7
5
3
2
100
7
5
3
2
3
Drain Current, ID -- A
RDS(on) -- ID
VGS=1.5V
IT00058
IT00059
--25
C
25
C
Ta=75
C
5LN01C
No.6555-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
PS
0
20
40
60
100
120
140
0
80
0.3
0.25
0.2
0.05
0.1
0.15
160
Ambient Temperature, Ta --
C
PD -- Ta
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02006
Note on usage : Since the 5LN01C is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
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