CPH6311

No.6794-1/4

Features

Low ON-state resistance.

Ultrahigh-speed switching.

2.5V drive.

Specifications

Absolute Maximum Ratings

at Ta=25

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--20

Gate-to-Source Voltage

VGSS

Drain Current (DC)

--5

Drain Current (Pulse)

IDP

s, duty cycle

--20

Allowable Power Dissipation

Mounted on a ceramic board (900mm

0.8mm)

1.6

Mounted on a FR4 board PW

2.0

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Electrical Characteristics

at Ta=25

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=

1mA, VGS=0

--20

Zero-Gate Voltage Drain Current

IDSS

VDS=

20V, VGS=0

--1

Gate-to-Source Leakage Current

IGSS

VGS=

8V, VDS=0

Cutoff Voltage

VGS(off)

VDS=

10V, ID=

1mA

--0.4

--1.4

Forward Transfer Admittance

yfs

VDS=

10V, ID=

5.8

8.5

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=

3A, VGS=

4.5V

RDS(on)2

ID=

1A, VGS=

2.5V

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6794

CPH6311

Package Dimensions

unit : mm

2151A

[CPH6311]

D2500 TS IM TA-3168

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain

SANYO : CPH6

0.05

0.9

0.7

0.2

1.6

0.6

0.95

2.8

0.2

2.9

0.15

0.4

Preliminary

CPH6311

No.6794-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Input Capacitance

Ciss

VDS=

10V, f=1MHz

1230

Output Capacitance

Coss

VDS=

10V, f=1MHz

200

Reverse Transfer Capacitance

Crss

VDS=

10V, f=1MHz

170

Turn-ON Delay Time

td(on)

See specified Test Circuit

Rise Time

See specified Test Circuit

100

Turn-OFF Delay Time

td(off)

See specified Test Circuit

100

Fall Time

See specified Test Circuit

Total Gate Charge

VDS=

10V, VGS=

10V, ID=

Gate-to-Source Charge

Qgs

VDS=

10V, VGS=

10V, ID=

2.8

Gate-to-Drain "Miller" Charge

Qgd

VDS=

10V, VGS=

10V, ID=

4.2

Diode Forward Voltage

VSD

IS=

5A, VGS=0

--0.83

1.5

Marking : JM

Switching Time Test Circuit

Static Drain-to-Source

On-State Resistance, R

(on) -

-
m

Static Drain-to-Source

On-State Resistance, R

(on) -

-
m

100

120

140

--0.2

--1

--2

--3

--4

--5

--6

--0.4

--0.6

--0.8

--1.0

--0.1

--0.3

--0.5

--0.7

--0.9

Drain-to-Source Voltage, VDS -- V

ID -- VDS

Drain Current, I

-

A

VGS= --1.0V

--4.5V

IT02276

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10

Gate-to-Source Voltage, VGS -- V

RDS(on) -- VGS

Ta=25

IT02278

Ambient Temperature, Ta --

RDS(on) -- Ta

IT02279

--60

100

120

140

--40

--20

100

120

160

140

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

--1.4

--1.6

--1.8

--1

--2

--3

--4

--5

--6

--7

--8

Gate-to-Source Voltage, VGS -- V

ID -- VGS

Drain Current, I

-

A

VDS= --10V

a=75

IT02277

--3.0A

= --1.0A

ID= -

-1.0A,

VGS= -

-2.5V

ID= --3.0A,

VGS= -

-4.5V

--4.0V

--3.5V

--3.0V

--2.5V

--1.5V

--2.0V

--25

PW=10

D.C.

--4.5V

VIN

P.G

ID= --3A

RL=3.3

VDD= --10V

VOUT

CPH6311

CPH6311

No.6794-3/4

7
5

100

7
5

1000

7
5

--0.1

--1.0

7
5

3
2

--0.01

7
5

3
2

7
5

3
2

--10

7
5

3
2

--0.1

--0.01

--1.0

5 7

--10

--2

--4

--6

--8

--10

--12

--14

--16

--18

--20

2 3

5 7

2 3

5 7

2 3

5 7

--0.1

--1.0

2 3

5 7

--0.01

--10

--100

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-Source V

oltage, V

VDS= --10V
ID= --5A

IT02284

0.5

1.0

100

120

1.5

1.6

2.0

140

160

Ambient Temperature, Ta --

PD -- Ta

Allo

able Po

wer Dissipation, P

IT02286

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, I

IDP= --20A

--10

--1.0

--100

--0.1

--0.01

IT02285

100

Operation in
this area is
limited by RDS(on).

Ta=25

Single pulse
Mounted on a ceramic board(900mm

!0.8mm)

100

1000

10000

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- VDS

Ciss, Coss, Crss -

-
pF

f=1MHz

Ciss

Coss

Crss

IT02283

--0.1

1.0

--1.0

--10

Drain Current, ID -- A

SW Time -- ID

Switching

ime, SW

ime -

-
ns

VDD= --10V
VGS= --4.5V

td(on)

td(off)

IT02282

Mounted on a ceramic board(900mm

0.8mm)

Drain Current, ID -- A

IT02280

0.01

1.0

7
5
3
2

0.1

7
5
3
2

100

7
5
3
2

orw

ard T

ransfer

Admittance,

yfs

-
S

yfs

-- ID

VDS= --10V

Ta= -

-25

IT02281

--0.4

--0.3

--0.2

--0.1

--0.5

--0.6

--0.7

--0.8

--0.9

--1.0

--0.001

Diode Forward Voltage, VSD -- V

orw

ard Current, I

-

A

IF -- VSD

VGS=0

--25

a=75

ID= --5A

100ms

DC operation

1ms

10ms

<10

0.5

1.0

100

120

1.5

2.0

2.5

140

160

Ambient Temperature, Ta --

PD -- Ta

Allo

able Po

wer Dissipation, P

IT02642

Mounted on a FR4 board PW

CPH6311

No.6794-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of December, 2000. Specifications and information herein are subject

to change without notice.

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