Specifications and information herin are subject to change without notice.
970602TM2fXHD
Absolute Maximum Ratings / Ta=25
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Switching Time Test Circuit
TENTATIVE
Features and Applications
Low ON-state resistance.
4V drive.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
FSS214
N- Channel Silicon MOS FET
DC-DC converters
V
V
A
A
W
C
C
min typ max unit
30
1.0
10
100
10
2.4
20
30
1.2
V
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
13
15
22
900
510
240
(15)
(180)
(150)
(100)
30
7
8
1.0
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW
10
s,duty cycle
1%
Mounted on ceramic board(1200mm
2
X0.8mm)1unit
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=
16V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=8A
ID=8A , VGS=10V
ID=4A , VGS=4V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
See specified Test Circuit
VDS=10V, VGS=10V, ID=8A
IS=8A , VGS=0
unit
30
24
8
52
2
150
--55 to +150
1
4
3
5
6
7
8
2
0.43
5.0
1.27
1.5
0.1
4.4
6.0
0.15
0.3
1.8max
Package Dimensions
SOP8(unit:mm)
Marking : S214
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
50
P.G
S
G
D
VOUT
VDD=15V
VIN
ID=8A
RL=1.9
PW=10
S
D.C.
1%
VIN
10V
0V
FSS214
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