FW241
No.6939-1/4
Features
This composite device allows high density mounting by
incorporating two MOSFET chips in one package that
feature low on-resistance, ultrahigh switching speed, and
drive voltage of 4.5V.
The two chips have near characteristics, and especially
suited for HDD.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6939
FW241
Package Dimensions
unit : mm
2129
[FW241]
42501 TS IM TA-3130
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1
4
5
8
4.4
0.3
6.0
0.2
5.0
0.595
1.27
1.5
0.1
1.8max
0.43
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
3.5
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
14
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (2000mm
2
!
0.8mm)1unit
1.4
W
Tc=25
C
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250
A
1.2
2.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3.5A
3.7
5.3
S
Marking : W241
Continued on next page.
Ultrahigh-Speed Swiching Applications
FW241
No.6939-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=3.5A, VGS=10V
64
84
m
RDS(on)2
ID=1.8A, VGS=4.5V
105
150
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
180
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
42
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
7
ns
Rise Time
tr
See specified Test Circuit
3
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
20
ns
Fall Time
tf
See specified Test Circuit
6
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=3.5A
5.0
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=3.5A
0.9
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=3.5A
0.6
nC
Diode Forward Voltage
VSD
IS=3.5A, VGS=0
0.88
1.2
V
Switching Time Test Circuit
Electrical Connection
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID=1A
RL=15
VDD=15V
VOUT
FW241
VIN
10V
0V
VIN
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
50
100
150
200
--60
--40
--20
0
20
40
60
80
100
120
140
160
2
3
4
5
6
7
8
9
10
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
VGS
=3V
4V
10V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
VDS=10V
50
100
150
200
250
300
0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
ID=3.5A
1.8A
0
RDS(on) -- Ta
Ambient Temperature, Ta --
C
--25
C
25
C
T
a=75
C
IT02676
IT02677
IT02678
IT02679
Ta=25
C
6V
8V
5V
I D
=1.8A, V
GS
=4V
ID=3.5A, V
GS
=10V
D1
D1
D2
D2
S1
G1
S2
G2
FW241
No.6939-3/4
3
10
1.0
0.1
7
5
3
2
7
5
2
7
5
3
2
5
3
2
7
0.1
1.0
2
3
5
7 10
2
3
5
7 100
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
120
140
160
0.5
0
1.0
1.5
2.0
2.5
Case Tamperature, Tc --
C
PD -- Tc
Allo
w
able Po
wer Dissipation, P
D
-
-
W
A S O
0.01
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Operation in this
area is limited by R
DS
(on).
DC operation
IDP=14A
ID=3.5A
<10
s
100
s
IT02686
IT02685
yfs
-- ID
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
yfs
-
-
S
0.01
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
10
IF -- VSD
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
T
a=75
C
--25
C
25
C
IT02680
IT02681
VGS=0
0
5
10
15
20
10
2
7
5
3
100
7
5
3
2
1000
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Ciss
Coss
Crss
IT02683
f=1MHz
1.0
2
7
5
3
10
7
5
3
2
100
0.1
2
3
5
7
1.0
10
2
3
5
7
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
td(on)
VDD=15V
VGS=10V
tr
td(off)
tf
IT02682
0
1
2
3
4
5
6
10
9
8
7
6
5
4
3
2
1
0
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage, V
GS
-
-
V
VDS=10V
ID=3.5A
IT02684
10ms
1ms
100ms
Tc=25
C
Single pulse
1unit
Mounted on a ceramic board(2000mm
2
!0.8mm)
0.1
2
7
5
3
1.0
7
5
3
2
10
0.01
0.1
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
Ta= -
-25
C
75
C
VDS=10V
25
C
FW241
No.6939-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2001. Specifications and information herein are subject
to change without notice.
PS
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