FW307
No.7274-1/5
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
N-channel
P-channel
Drain-to-Source Voltage
VDSS
250
--250
V
Gate-to-Source Voltage
VGSS
30
30
V
Drain Current (DC)
ID
1
--0.7
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
5
--3
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm
2
!
0.8mm)1unit
1.7
W
Total Dissipation
PT
Mounted on a ceramic board (900mm
2
!
0.8mm)
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
250
V
Zero-Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0
100
A
Zero-Gate Voltage Drain Current
IDSS
VDS=15V, VGS=0, Ta=0 to 60
C
4
A
Gate-to-Source Leakage Current
IGSS
VGS=
25V, VDS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=
15V, VDS=0, Ta=0 to 60
C
1.2
A
Continued on next page.
Features
The FW307 incorporates an N-channel MOSFET and a
P-channel MOSFET that feature low ON-resistance and
high-speed switching, thereby enabling high-density
mounting.
Excellent ON-resistance characteristic.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7274
FW307
Package Dimensions
unit : mm
2129
[FW307]
GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1
4
5
8
4.4
0.3
6.0
0.2
5.0
0.595
1.27
1.5
0.1
1.8max
0.43
83002 TS IM TA-1265
Preliminary
FW307
No.7274-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.4
2.1
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
1.2
1.6
Input Capacitance
Ciss
VDS=20V, f=1MHz
160
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
80
ns
Fall Time
tf
See specified Test Circuit.
30
ns
Diode Forward Voltage
VSD
IS=1A, VGS=0
1.0
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--250
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--250V, VGS=0
--100
A
Zero-Gate Voltage Drain Current
IDSS
VDS=15V, VGS=0, Ta=0 to 60
C
--4
A
Gate-to-Source Leakage Current
IGSS
VGS=
25V, VDS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=
15V, VDS=0, Ta=0 to 60
C
1.2
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.5
--2.5
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--0.7A
0.7
1.1
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=--0.7A, VGS=--10V
3
4
Input Capacitance
Ciss
VDS=--20V, f=1MHz
160
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
45
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
20
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
90
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Diode Forward Voltage
VSD
IS=--1A, VGS=0
--1.0
--1.2
V
Switching Time Test Circuit
[N-channel]
[P-channel]
Electrical Connection
10V
0V
VIN
FW307
ID=1A
RL=100
VDD=100V
PW=10
s
D.C.
1%
P.G
50
G
S
D
VOUT
VIN
0V
--10V
VIN
FW307
ID= --0.7A
RL=142
VDD= --100V
PW=10
s
D.C.
1%
P.G
50
G
S
D
VOUT
VIN
(Top view)
1
2
3
4
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
FW307
No.7274-3/5
0
0
0.2
1.0
0.6
0.4
0.8
2.0
1.0
1.2
1.4
1.6
1.8
2.0
0
0.2
0.6
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
ID -- VDS
VGS=3V
4V
5V
6V
10V
0
0
2
4
6
8
0.5
10
12
1.0
1.5
2.0
2.5
3.0
3.5
4.0
14
16
18
20
RDS(on) -- VGS
Ta=25
C
ID=1A
--60
60
80
--40
--20
0
20
40
100
120
140
--60
60
80
--40
--20
0
20
40
100
120
140
3.0
2.5
2.0
1.5
1.0
0
0.5
RDS(on) -- Ta
0
0.5
1.0
1.5
2.0
2.5
4.0
3.0
3.5
ID -- VGS
IT04459
IT04461
IT04463
IT04465
[Pch]
[Pch]
[Pch]
[Pch]
[Nch]
[Nch]
[Nch]
[Nch]
0
0
--0.2
--0.4
--0.6
--0.8
--1.2
--1.4
--1.6
--1.8
--2.0
--2
--1.0
--4
--6
--8
--10
--1
--3
--5
--7
--9
0
0
--0.2
--0.4
--0.6
--0.8
--1.2
--1.4
--1.6
--1.8
--2.0
--1.0
--1.0
--2.0
--3.0
--4.0
--5.0
--0.5
--1.5
--2.5
--3.5
--4.5
ID -- VDS
ID -- VGS
VDS= --10V
0
0
--2
--4
--6
1
--8
2
--10
3
4
6
5
--12
8
7
0
1
2
3
4
6
5
8
7
--14
--16
--18
--20
RDS(on) -- VGS
Ta=25
C
ID= --0.7A
RDS(on) -- Ta
ID= --0.7A
VGS= --10V
IT04460
IT04464
IT04466
IT04462
T
a=75
C
T
a= -
-25
C
25
C
25
C
--
2
5
C
7
5
C
VGS=
--
3V
--
4V
--5V
--
6V
--
10V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
C
Ambient Temperature, Ta --
C
T
a=75
C
25
C
-
-25
C
ID=1A
VGS=10V
VDS=10V
FW307
No.7274-4/5
0.1
0.01
0.1
2
3
5
7
1.0
2
3
5
7
2
1.0
7
5
3
2
5
3
2
y
fs
-- ID
IT04467
25
C
[Pch]
[Nch]
--0.1
0.1
--1.0
3
2
7
5
3
2
1.0
3
2
7
5
3
2
y
fs
-- ID
VDS= --10V
IT04468
Ta= -
-25
C
25
C
75
C
0.01
0.6
0.5
0.4
0.8
0.7
0.9
1.0
0.1
1.0
7
5
3
2
7
5
3
2
3
2
IF -- VSD
0
5
10
15
20
25
30
10
100
7
5
3
2
7
5
3
2
1000
Ciss
Coss
Crss
f=1MHz
Ciss, Coss, Crss -- VDS
0.1
3
10
1.0
2
3
5
7
3
2
3
100
7
5
3
7
5
2
2
SW Time -- ID
VDD=100V
VGS=10V
td(on)
tr
tf
td(off)
IT04469
IT04471
IT04473
0
10
--5
100
7
5
3
2
7
5
3
2
--10
--15
1000
--20
--30
--25
Ciss, Coss, Crss -- VDS
f=1MHz
--0.4
--0.6
--0.8
--1.0
--1.2
--0.01
--0.1
--1.0
3
7
5
3
2
7
5
3
2
2
IF -- VSD
VGS = 0
IT04470
IT04474
--25
C
25
C
T
a=75
C
Ciss
Coss
Crss
--0.1
2
3
5
7
1.0
7
5
3
2
--1.0
3
10
7
5
3
2
2
100
SW Time -- ID
IT04472
VDD= --100V
VGS= --10V
tf
tr
td(off)
td(on)
[Pch]
[Pch]
[Nch]
[Nch]
[Nch]
[Pch]
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
VDS=10V
Ta= -
-2
5
C
75
C
VGS=0
T
a=75
C
25
C
--25
C
FW307
No.7274-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2002. Specifications and information herein are subject
to change without notice.
PS
2
3
5
7
--0.01
2
3
5
7
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
--0.001
0
20
40
60
100
120
140
0
80
2.5
1.5
1.7
1.0
0.5
2.0
160
PD -- Ta
IT04477
A S O
IT04475
Total Dissipation
1unit
2
3
5 7
5
--0.1
--1.0
2
3
5 7 --10
2
3
2
3
5 7--100
100ms
DC operation
10ms
1ms
100
s
10
s
[Pch]
[Nch, Pch]
0
0.2
0.4
0.6
0.8
1.4
1.6
1.8
0
1.0
1.2
2.0
1.2
0.8
0.4
1.6
1.7
1.8
1.0
0.6
0.2
1.4
2.0
PD(FET1) -- PD(FET2)
IT04478
[Nch, Pch]
[Nch]
A S O
IDP= --3A
ID= --0.7A
IT04476
Operation in this area
is limited by RDS(on).
Ambient Temperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
Allo
w
able Po
wer Dissipation (FET1), P
D
-
-
W
Allowable Power Dissipation (FET2), PD -- W
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Ta=25
C
Single pulse
Mounted on a ceramic board (1200mm
2
!0.8mm)1unit
Mounted on a ceramic board (1200mm
2
!0.8mm)
Mounted on a ceramic board (1200mm
2
!0.8mm)
2
3
5
7
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
0.001
5
1.0
2
3
5 7
0.1
2
3
5 7
2
3
5 7
10
2
3
100
100ms
DC operation
10ms
1ms
100
s
Ta=25
C
Single pulse
Mounted on a ceramic board (1200mm
2
!0.8mm)1unit
Operation in this area
is limited by RDS(on).
ID=1A
IDP=5A
10
s
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