No. 5638
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
V
CC
max
14
V
V
S
max
Maximum rating for V
S
1 and V
S
2
14
V
Maximum input voltage
V
IN
For the V
IN
1 through V
IN
3 input pins
13
V
Mute pin voltage
V
Mute
13
V
Allowable power dissipation
Pd max
0.9
W
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
55 to +150
C
43097HA(OT) No. 5638-1/4
Overview
The LA6529M is a three-channel bridge (BTL) driver for
CD-ROM drives.
Functions and Features
Three bridge-tied load (BTL) power amplifier channels
I
O
max: 1 A
Muting circuit
Thermal shutdown circuit
Package Dimension
unit: mm
3073A-MFP30SLF
SANYO: MFP30SLF
[LA6529M]
LA6529M
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
CD-ROM Drive Three-Channel Bridge (BTL) Driver
Monolithic Linear IC
Parameter
Symbol
Conditions
Ratings
Unit
Operating voltage 1
V
CC
4 to 13
V
Operating voltage 2-1
V
S
1
The operating voltage for CH-U
4 to 13
V
Operating voltage 2-2
V
S
2
The operating voltage for CH-V and CH-W
4 to 13
V
Operating Conditions
at Ta = 25C
Note: V
CC
> V
S
1, V
S
2
Specifications
Maximum Ratings
at Ta = 25C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
V
CC
no-load input current drain
I
CC
1
All outputs on (Mute 1, 2: high
*
)
4
8
15
mA
I
CC
2
All outputs off (Mute 1, 2: low)
4
10
mA
V
S
1 no-load current drain
I
S
1-1
CH-U: on (Mute 1: high
*
)
5
10
mA
I
S
1-2
CH-U: off (Mute 1: low)
2
mA
V
S
2 no-load current drain
I
S
2-1
CH-V, CH-W: on (Mute 2: high
*
)
10
20
mA
I
S
2-2
CH-V, CH-W: off (Mute 2: low)
4
mA
Output offset voltage
V
OF
1 to V
OF
3
The potential difference between
50
+50
mV
the + and sides for CH-U through CH-W
Input voltage range
V
IN
The voltage range for V
IN
1 through V
IN
3.
0.5
5
V
Buffer amplifier 1 output voltage
V
BUFFER
1
The voltage difference with respect to 1/2 V
S
1
50
0
+50
mV
Buffer amplifier 2 output voltage
V
BUFFER
2
The voltage difference with respect to 1/2 V
S
2
50
0
+50
mV
Output voltage (source)
V
O
1
Output high, I
O
= 700 mA, for + outputs
4.4
4.7
V
Output voltage (sink)
V
O
2
Output low, I
O
= 700 mA, for + outputs
0.3
0.6
V
Closed loop voltage gain
VG
Bridge amplifier
6
dB
Slew rate
SR
0.15
V/s
Mute on voltage
V
MUTE
1, 2
The voltage applied to MUTE1 or MUTE2
1.5
2
V
when the output goes on.
Mute on current
I
MUTE
1, 2
The MUTE1 or MUTE2 influx current when
6
10
A
the output goes on.
No. 5638-2/4
LA6529M
Electrical Characteristics
at Ta = 25C, V
CC
=12 V, V
S
1 = V
S
2 = 5 V
Note:
*
CH-U will be on when MUTE1 is high. CH-V and CH-W will be on when MUTE2 is high.
Block Diagram
Thermal shutdown
Level
shifter
Level
shifter
Level
shifter
No. 5638-3/4
LA6529M
Pin Functions
Pin No.
Pin
Function
Equivalent circuit
1, 2,
14, 15,
RF
Substrate (minimum potential)
16, 17,
29, 30
3
GND
Ground
4
V
IN
1
CH-U input
5
V
IN
1A
CH-U input (for gain adjustment)
7
V
IN
2
CH-V input
8
V
IN
2A
CH-V input (for gain adjustment)
9
V
IN
3
CH-W input
10
V
IN
3A
CH-W input (for gain adjustment)
6
MUTE1
Sets the CH-U output on or off.
11
BUFFER
Buffer amplifier 1 output (1/2 VS1: typical).
OUT1
Used as the reference voltage for
the CH-U output stage.
12
BUFFER
Buffer amplifier 2 output (1/2 VS1: typical).
OUT2
Used as the reference voltage for
the CH-V and CH-W output stages.
13
V
CC
Power supply
18
NC
Must be left open.
19
MUTE2
Sets the CH-V and CH-W outputs on or off.
20
V
S
2
CH-V and CH-W output stage power supply
21
W
OUT
CH-W inverted output
22
W
OUT
+
CH-W noninverted output
23
V
OUT
CH-V inverted output
24
V
OUT
+
CH-V noninverted output
25
U
OUT
CH-U inverted output
26
U
OUT
+
CH-U noninverted output
27
V
S
1
CH-U output stage power supply
28
V
REF
Level shifter circuit reference voltage
(common to all three channels)
Drive
Drive
No. 5638-4/4
LA6529M
Sample Application Circuit
This catalog provides information as of April, 1997. Specifications and information herein are subject to change
without notice.
s
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace
equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of
which may directly or indirectly cause injury, death or property loss.
s
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and
distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all
damages, cost and expenses associated with such use:
Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on
SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees
jointly or severally.
s
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Copper foil
Ambient temperature, Ta C
Allowable power dissipation, Pd max Ta
Reference value for a
steel substrate
(t = 1 mm)
With a P-board
Independent IC
P-board glass epoxy
Thickness: 1.5 mm
Microcontroller
Microcontroller
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