Ordering number : ENN6497A

11201RM (OT) No. 6497-1/12

Overview

The LB11975 is a monolithic bipolar IC developed for
uses as a spindle motor driver for high-speed CD-ROM
and DVD-ROM drives. To minimize heat generation
during high-speed rotation and braking, the LB11975
adopts direct PWM drive in the output stage. During
reverse braking the upper and lower side output transistors
are both driven in PWM mode to implement dual PWM
controlled braking. The device thus controls the current to
remain under a limit value and prevent rapid heat
generation. This prevents device destruction due to rapid
heating. The absolute maximum voltage rating is 27 V,
and the maximum current is 2.5 A.

Functions and Features

· Direct PWM drive (lower side control)
· Built-in upper and lower side output diodes
· Supports the use 3.3 V DSP devices.
· Power saving function for standby mode
· Hall FG output (1 or 3 Hall device operation)
· Built-in Hall device power supply
· Reverse rotation detection output and drive cutoff circuit
· Voltage control amplifier
· Current limiter circuit
· Thermal protection circuit

Package Dimensions

unit: mm

3251-HSOP36R

(6.2)

0.8

2.0

17.8

0.3

(4.9)

2.7

0.65

0.25

(0.5)

7.9

10.5

2.25

2.45max

0.1

SANYO: HSOP36R

[LB11975]

LB11975

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

High-Speed CD-ROM Spindle Motor Driver IC

Monolithic Digital IC

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

0.4

0.8

0.9

1.2

1.6

2.0

2.1

2.4

100

Allowable power dissipation, Pd max -- W

Pd max -- Ta

Ambient temperature, Ta --

Mounted on the specified printed circuit

(114.3

76.1

1.6 mm

glass epoxy board)

Independent IC

0.54

1.26

No. 6497-2/12

LB11975

Parameter

Symbol

Conditions

Ratings

Unit

Supply voltage 1

1 max

Supply voltage 2

2 max

Supply voltage 3

3 max

Output current

max

2.5

Output applied voltage

max

Allowable power dissipation 1

Pd max1

Independent IC

0.9

Allowable power dissipation 2

Pd max2

Mounted on the specified circuit board

2.1

(114.3

76.1

1.6 mm

glass epoxy board)

Operating temperature

Topr

20 to +75

°C

Storage temperature

Tstg

55 to +150

°C

Specifications

Maximum Ratings

at Ta = 25°C

Parameter

Symbol

Conditions

Ratings

Unit

Power-supply voltage range 1

4 to 6

Power-supply voltage range 2

4 to 16

Power-supply voltage range 3

4 to 16

FG pin applied voltage

VFG

0 to V

FG pin output current

IFG

0 to 4.0

Allowable Operating Ranges

at Ta = 25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Supply current 1

1-1

CTL

= V

CREF

5.0

8.0

11.0

1-2

VS/S = 0 V

200

µA

Supply current 2

2-1

CTL

= V

CREF

5.0

6.5

8.0

2-2

VS/S = 0 V

200

µA

Supply current 3

3-1

CTL

= V

CREF

0.3

0.7

3-2

VS/S = 0 V

200

µA

[Output Block]

Output saturation voltage 1

sat1(L) I

= 0.5 A, V

(sink), V

1 = 5 V, V

2 = V

3 = 12 V

0.15

0.25

sat1(H) I

= 0.5 A, V

(source), V

1 = 5 V, V

2 = V

3 = 12 V

0.80

0.95

Output saturation voltage 2

sat2(L) I

= 1.5 A, V

(sink), V

1 = 5 V, V

2 = V

3 = 12 V

0.40

0.60

sat2(H) I

= 1.5 A, V

(source), V

1 = 5 V, V

2 = V

3 = 12 V

1.10

1.30

Output leakage current

leak(L)

100

µA

leak(H)

100

µA

Diode forward voltage

Upper side diode, I

= 2.0 A

1.50

2.00

Lower side diode, I

= 2.0 A

1.50

2.00

[Hall Amplifier Block]

Input bias current

µA

Common-mode input voltage range

ICM

1.5

Hall input sensitivity

HIN

mVp-p

Hysteresis

(HA)

Input voltage: low

high

Input voltage: high

low

[Thermal Protection Circuit]

Operating temperature

T-TSD

Design target value (junction temperature)

150

180

210

°C

Hysteresis

TSD

Design target value (junction temperature)

°C

Electrical Characteristics

at Ta = 25°C, V

1 = 5 V, V

2 = V

= 12 V

Continued on next page.

Note:

These are design target values and are not tested.

No. 6497-3/12

LB11975

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

[PWM Oscillator]

High-level output voltage

H(OSC)

3.1

3.3

3.5

Low-level output voltage

L(OSC)

1.4

1.6

1.8

Amplitude

V(OSC)

1.5

1.7

1.9

Vp-p

Oscillator frequency

f(OSC)

C = 2200 pF

23.0

kHz

Charge current

CHG

110

µA

Charge resistor value

DCHG

1.6

2.1

2.6

[CTL Amplifier]

VCTL pin input current

VCTL

CTL

= V

CREF

= 1.65 V

µA

VCREF pin input current

VCREF

CTL

= V

CREF

= 1.65 V

µA

Forward rotation gain

GDF

Design target value

0.20

0.25

0.30

times

Reverse rotation gain

GDF

Design target value

0.30

0.25

0.20

times

Forward rotation limiter voltage

0.26

0.29

0.32

Reverse rotation limiter voltage

0.26

0.29

0.32

Startup voltage

CTH

CREF

= 1.65 V. Design target value

1.50

1.80

Dead zone

CREF

= 1.65 V. Design target value

140

[FG Pin] (speed pulse output)

Low-level output voltage

FGL

= 2 mA

0.4

Pull-up resistor value

7.5

12.5

[RS Pin]

Low-level output voltage

RSL

= 2 mA

0.4

Pull-up resistor value

7.5

12.5

[Stop/Start Pin]

Low-level input voltage

0.7

High-level input voltage

2.0

Low-level input current

= 0 V

µA

High-level input current

= 5.0 V

200

µA

[Hall Device Power Supply]

Hall device supply voltage

= 5 mA

0.65

0.85

1.05

Allowable current

Truth Table

Input

Control voltage V

CTL

Output

FG output

IN1

IN2

IN3

Source

Sink

FG1

FG2

OUT2

OUT1

OUT2

OUT3

OUT1

OUT3

OUT2

OUT3

OUT1

OUT2

OUT1

OUT3

OUT1

OUT2

OUT3

OUT2

Note:

These are design target values and are not tested.

FG1

FG2

No. 6497-7/12

LB11975

Pin Functions

Pin No.

Pin voltage

Function

Equivalent circuit

4 V to 16 V

Supplies the source side pre-drive
voltage.

10k

VCC1

25 26

500

VCC1

30k

VCC1

4 V to 16 V

Supplies the motor drive voltage.

4 V to 16 V

Supply voltage for all circuits other than
the output transistors and the source side
pre-drive voltage

Reverse rotation detection
High-level output: Forward rotation
Low-level output: Reverse rotation

Single Hall device waveform Schmitt
comparator synthesized output

FG1

Three Hall device waveform Schmitt
comparator synthesized output

FG2

U phase Hall device input.
Logic high refers to the state where IN1

> IN1

IN1

1.5 V to

1 1.5 V

V phase Hall device input.
Logic high refers to the state where IN2

> IN2

W phase Hall device input.
Logic high refers to the state where IN3

> IN3

Provides the Hall device lower side bias
voltage.

IN1

IN2

IN3

75k

50k

VCC1

All circuits can be set to the non-operating
state by setting this pin to 0.7 V or under,
or by setting it to the open state.
This pin must be held at 2 V or higher.

S/S

0 V to V

Ground for all circuits except the output

GND1

Continued on next page.

No. 6497-8/12

LB11975

Continued from preceding page.

Pin No.

Pin voltage

Function

Equivalent circuit

Control loop frequency characteristics
correction

Closed loop oscillation in the current
control system can be stopped by
connecting a capacitor between this pin
and ground.

VCC1

500

65k

500

VCC1

500

VCC2

VCC1

VCC3

30 31

35 36

VCC1

300

11k

PWM oscillator capacitor connection

PWM

Control reference voltage input

The control start voltage is determined by
this voltage.

CREF

0 V to

1 1.5 V

Speed control voltage input

This IC implements a voltage control
system in which VC > V

CREF

means

forward rotation and VC < V

CREF

means

slow foward rotation.

(This IC includes reverse rotation
prevention circuit, so reverse rotation will
not occur.)

CTL

0 V to

1 1.5 V

W phase output

3, 4

OUT3

Ground for the output transistors

6, 7

30, 31

GND2

V phase output

1, 2

OUT2

U phase output

35, 36

OUT1

Upper side npn transistor collector
(shared by all three phases)

Connect a resistor between V

3 and the

RF pin for current detection. The fixed
current control system and the current
limiter operate by detecting this voltage.

Peak hold circuit capacitor connection.

Connect a capacitor to this pin to smooth
the voltage detected by the resistor RF.

Torque Command

Figure 1 shows the relationship between the control voltage (V

CTL

) and the RF voltage.

No. 6497-9/12

LB11975

3mV

VRF

Forward rotation

1.65V

Dead zone

VCTL

VCREF=1.65V

Offset voltage

VCTL

VCREF

IN1+

IN1

IN2+

IN2

IN3+

IN3

OUT

Figure 1

Figure 2 Reverse Rotation Detection Circuit Block Diagram

Truth Table

Note:

Since this IC includes a reverse rotation prevention circuit, although the IC will brake the motor if the motor is rotating and V

CTL

< V

CREF

, when

reverse rotation is detected, the IC will turn the output off, thus stopping motor rotation.

Operation

CTL

> V

CREF

Forward rotation

CREF

> V

CTL

Reverse torque braking

Reverse Rotation Detection Circuit Truth Table

During forward rotation:

The OUT signal is set high to reset DFF.

During reverse rotation:

Reverse rotation is detected when the Hall comparator output falls.

At that point the OUT signal is set to the low level.

RS pin

Forward rotation

HIGH

Reverse rotation

LOW

Overview of Reverse Torque Braking

(This circuit uses a direct PWM drive technique and allows the current limiter to operate during reverse torque braking.)

In earlier direct PWM motor drivers, speed control was implemented by applying PWM to only one (either the upper or
lower) output transistor. With this type of driver, the regenerative current formed during reverse torque braking operated
as a short-circuit braking. As a result problems such as the coil current exceeding the limit value and I

max being

exceeded, would occur. To prevent these problems, the LB11975 switches both the upper and lower side output
transistors during reverse torque braking to suppress the generation of overcurrents due to regenerative currents when the
PWM is off and allows the optimal design of drive currents.

Supplementary Documentation

Coil current during reverse torque braking

(1) Earlier ICs, with the lower side transistor was switched and the upper side transistor used for current detection (RF)

During reverse torque braking, when the coil current increases and the limit is reached, the lower side output
transistor is turned off. At this time the regenerative current flows through the upper side transistor. The circuit path is
as follows:
Coil

upper side diode

upper side transistor

coil

During regeneration, the upper side transistor is on and the back EMF that occurs at the upper side transistor's emitter
pin has a low potential, and since the upper side transistor is fully on at that point, the circuit functions as short-circuit
braking.
Even if the regenerative current results in the RF voltage reaching the limit voltage, since the upper side transistor
cannot be turned off, the limit circuit will not operate and a coil current in excess of I

max may occur.

(2) Earlier ICs, with the upper side transistor was switched and the upper side transistor used for current detection (RF)

During reverse torque braking, when the coil current increases and the limit is reached, the upper side output
transistor is turned off. At this time the regenerative current flows through the lower side transistor. The circuit path is
as follows:
Coil

lower side transistor

ground

lower side diode

coil

During regeneration, the lower side transistor is on and the back EMF that occurs at the lower side transistor's
collector pin has a high potential, and since the lower side transistor is fully on at that point, the circuit functions as
short-circuit braking.
Since the regenerative current does not flow through the RF pin, the current limiter circuit does not operate, and a
current in excess of I

max may occur in the lower side transistor.

No. 6497-10/12

LB11975

IN1

IN2

IN3

Reverse rotation is detected with this timing.

Hall comparator

(IN1, IN2, and IN3)

waveforms

Figure 3 Reverse Rotation Timing Chart

(3) When both the upper and lower side transistors are switched and current detection (RF) is performed in the upper side

transistor
During reverse torque braking, when the coil current increases and the limit is reached, both the upper and lower side
transistors are turned off. The motor current circuit path at this point is as follows:
Coil

upper side diode

power supply line capacitor

ground

lower side diode

coil

When the limiter circuit operates, both the upper and lower side transistors are turned off, so short-circuit breaking
does not occur, and coil current attenuation is all that occurs. Thus this technique allows current control at the set
(limiter) current to be performed even during reverse torque braking.

Regenerative Current Path

No. 6497-11/12

LB11975

A13187

Drive Mode

PS No. 6497-12/12

LB11975

This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products (including technical data, services) described or contained
herein are controlled under any of applicable local export control laws and regulations, such products must
not be exported without obtaining the export license from the authorities concerned in accordance with the
above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

Braking Mode

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