ChipFind - документация

Электронный компонент: MCR100-7

Скачать:  PDF   ZIP

Document Outline

MCR100-3 ... MCR100-8
G
A
K
TO-92 Plastic Package
Weight approx. 0.18g
MAXIMUM RATINGS (T
J
=25
C unless otherwise noted.)
SEMTECH ELECTRONICS LTD.
( Wholly owned subsidiary of Honey Technology Ltd.)
Dated : 06/12/2003
Rating Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
(T
J
=25 to 125
C, R
GK
=1K
)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
V
DRM
and
V
RRM
100
200
300
400
500
600
Volts
Forward Current RMS
(All Conduction Angles)
I
T(RMS)
0.8 Amps
Peak Forward Surge Current, T
A=
25
C
(1/2 Cycle, Sine Wave, 60Hz)
I
TSM
10 Amps
Circuit Fusing (t=8.3ms)
I
2
t 0.415 A
2
s
Peak Gate Power - Forward, T
A
=25
C P
GM
0.1 Watts
Average Gate Power - Forward, T
A
=25
C P
GF(AV)
0.01 Watt
Peak Gate Current - Forward, T
A
=25
C
(300
s,120PPS)
I
GFM
1 Amp
Peak Gate Voltage - Reverse
V
GRM
5 Volts
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
T
J
-40 to +125
C
Storage Temperature Range
T
s
-40 to +150
C
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
GSP FORM A IS AVAILABLE
MCR100-3 ... MCR100-8
CHARACTERISTICS (T
C
=25
C, R
GK
=1K
unless otherwise noted.)
Characteristic Symbol
Min
Max
Unit
Peak Forward or Reverse Blocking Current
(V
AK
=Rated V
DRM
or V
RRM
)
I
DRM
,I
RRM
-
10
A
Forward "On" Voltage
(I
TM
=1A Peak @T
A
=25
C)
V
TM
- 1.7
Volts
Gate Trigger Current(Continuous dc),Note 1
(Anode Voltage=7Vdc,R
L
=100 Ohms)
I
GT
- 200
A
Gate Trigger Voltage(Continuous dc)
(Anode Voltage=7Vdc,R
L
=100 Ohms)
(Anode Voltage=Rated V
DRM
,R
L
=100 Ohms)
V
GT
-
0.8 Volts
Holding Current
(Anode Voltage=7Vdc,initiating current=20mA)
I
H
- 5 mA
Note 1. R
GK
current is not included in measurement
.
GSP FORM A IS AVAILABLE




















SEMTECH ELECTRONICS LTD.
( Wholly owned subsidiary of Honey Technology Ltd.)
Dated : 06/12/2003
MCR100-3 ... MCR100-8
SEMTECH ELECTRONICS LTD.
( Wholly owned subsidiary of Honey Technology Ltd.)
Dated : 06/12/2003

Latching Cur
r
ent
Ho
ld
in
g Cu
rre
n
t
Figure 5. Typical RMS Current Derating
T
J
, Junction Temperature (
C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
30
C
35
T
C
,
Maxi
mum Allowable Case
Tempera
t
ur
e (
C)
0.1
80
60
50
40
70
0
0.2
120
110
100
90
-10
-40 -25
10
5
20
Figure 6. Typical On-State Characteristics
V
T
, Instantaneous On-State Voltage (volts)
T
J
, Junction Temperature (
C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
MAXIMUM @ TJ=25
C
5
I
T
,Instanta
n
e
ous O
n
-State
Cu
r
r
ent (AMPS)
DC
90
C
0.4
60
C
0.3
180
C
0.5
0.1
1.1
0.8
0.5
1
80
50
65
95
110
10
-40
10
-10
-25
2.0
1.7
1.4
2.9
2.6
2.3
3.5
3.2
MAXIMUM @ TJ=110
C
95
50
35
20
80
65
110
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
T
J
, Junction Temperature (
C)
Gate Trig
ge
r
C
u
rr
ent
20
-40
1000
10
100
-10
-25
20
5
70
60
50
40
30
100
90
80
T
J
, Junction Temperature (
C)
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
Gate Trig
g
e
r
Voltage (vo
l
ts)
65
50
35
95
80
100
0.2
110
1000
-25
-10
-40
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
35
5
20
80
50
65
110
95
I
T(RMS)
, RMS On-State Current (AMPS)
(A)









(A)
(A)