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Электронный компонент: GL4100

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(Ta=25C)
I
F
50
mA
I
FM
A
V
R
V
P
mW
T
opr
C
T
stg
C
T
sol
260
C
1
6
75
1.4mm
3.0
4.0
2.8
1.8
0.7
0.7
0.15
4
4
4
4
6
6
6
6
(1.7)
2
-
C0.5
(2.54)
2
1
1.4
2
1
1.4
0.9
MAX.
0.3
MAX.
0.1
MAX.
0.5
MIN.
2
-
0.45
+
0.3
-
0.1
2
-
4
+
0.3
-
0.1
17.5
+
15
-
10
Features
Applications
Parameter
Symbol
Rating
Unit
Forward current
Peak forward current
Reverse voltage
Power dissipation
Operating temperatur
Storage temperature
Soldering temperature
*1
*2
- 25 to + 85
- 40 to + 85
Outline Dimensions
(Unit : mm)
Rugged resin
Rugged resin 0.2
MAX.
Gate burr
Detector center
Pale red transparent
epoxy resin
1 Anode
2 Cathode
*
( ) : Reference dimensions
*
Tolerance :
0.2 mm
Soldering area
Absolute Maximum Ratings
GL4100
GL4100
Side View and Thin Flat Type
Infrared Emitting Diode
* 1 Pulse width <=100
s, Duty ratio=0.01
* 2 For 5 seconds at the position of 1.4 mm from the resin edge
1. Compact flat package
2. Wide beam angle
(Half intensity angle : 90 )
1. Mouses
2. Track balls
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
s
s
s
s
V
F
V
FM
I
R
e
p
C
t
f
c
I
F
= 20mA
I
FM
= 0.5A
V
R
= 3V
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
V
R
= 0, f = 1MH
Z
I
F
= 20mA
(Ta=25 C )
-
1.2
1.4
V
-
4.0
V
-
-
10
A
-
mW
-
950
-
nm
-
45
-
nm
-
50
-
-
300
-
Z
-
90
-
1
10
100
0
10
20
30
50
60
- 25
0
25
50
75
100
85
40
kH
1.0
2.0
3.0
T
a
= 25C
10
- 4
10
- 3
10
- 2
10
- 1
1000
1
pF
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Half intensity angle
Fig. 1 Forward Current vs. Ambient
Temperature
Fig. 2 Peak Forward Current vs. Duty Ratio
Forward current I
F
(
mA
)
Ambient temperature Ta (C )
Peak forward current I
FM
(
mA
)
Duty ratio
Pulse width <=100
s
GL4100
Forward voltage
Peak forward voltage
-
s
880
920
960
20
0
40
60
80
100
0
25
50
75
100
975
950
925
900
0
25
50
75
100
1
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
25C
0C
20C
50C
900
940
980
0.2
0.5
2
5
10
20
3.5
I
F
= const.
500
200
100
50
20
10
5
2
1
I
F
= 5mA
T
a
= 25C
T
a
= 75C
- 25
- 25
1000
1000 1020 1040
I
F
=
const.
Fig. 3 Spectral Distribution
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
Fig. 5 Forward Current vs. Forward Voltage
Fig. 6 Relative Radiant Flux vs. Ambient
Temperature
Relative radiant intensity (%)
Wavelength
(nm)
Peak emission wavelength
p (nm)
Ambient temperature T
a
(C)
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
Relative radiant flux
Ambient temperature T
a
(C)
10
1
0.1
100
10
1
0.01
0.02
0.05
0.2
0.5
2
5
DC
T
a
= 25C
1000
Fig. 7 Radiant Flux vs. Forward Current
Fig. 8 Relative Radiant Intensity vs. Distance
Radiant flux
e
(mW
)
Forward current I
F
(mA)
Distance to detector d (mm)
Pulse
(pulse width
<=100
s)
GL4100
Relative radiant intensity (%)
1
10
100
1
10
100
0.1
0.1
Ta = 25C
-
Relative radiant intensity (%)
GL4100
Fig. 10 Radiation Diagram
(Ta=25C)
Angular displacement
Distance to detector d (mm)
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
Fig. 9 Relative Radiant Intensity vs.
Distance (Detector : PT4110)
90
20
10
0
- 10
- 20
30
40
50
60
70
80
- 90
- 30
- 40
- 50
- 60
20
40
60
80
100
120
140
160
180
200
0
Relative radiant intensity (%)
- 70
- 80
1
10
100
1
10
100
0.1
0.1
0.01
Ta=25C
q