data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
GL4800
s
Features
3. Radiant flux
4. Epoxy resin package
s
Applications
1. Floppy disk drives
2. Optoelectronic switches
*1 Pulse width<=100
s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
Parameter
Symbol
Rating
Unit
Power dissipation
P
75
mW
Forward current
I
F
50
mA
*1
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Operating temperature
T
opr
- 25 to + 85
C
Storage temperature
T
stg
- 40 to + 85
C
*2
Soldering temperature
T
sol
260
C
GL4800
1. Thin type ( Thickness : 1.5mm )
2. Beam angle (
:
TYP. 30 )
(
e
: MIN. 0.7mW at I
F
= 20mA )
1.6
0.8
1.0
1.7
0.8
1.8
MIN.0.5
2.54
0.8
0.7
2
-
C0.5
s
Outline Dimensions
(Unit : mm )
(Ta = 25C )
s
Absolute Maximum Ratings
0.25
1
2
2
1
Protruded resin
Parameter
Conditions
MIN.
TYP.
MAX.
Unit
Forward voltage
-
1.2
1.4
V
Peak forward voltage
-
3.0
4.0
V
Reverse current
-
-
10
A
Terminal capacitance
-
70
-
pF
Frequency response
-
-
300
-
kHz
Radiant flux
0.7
1.6
3.0
mW
Peak emission wavelength
-
950
-
nm
Half intensity wavelength
-
45
-
nm
s
Electro-optical Characteristics
( Ta = 25C)
I
F
= 20mA
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
I
FM
= 0.5A
V
R
= 3V
V
R
= 0, f = 1MHz
Symbol
V
F
V
FM
I
R
C
t
f
c
e
p
Rest of gate
Pink transparent
epoxy resin
1 Anode
2 Cathode
Diode
Thin Type Infrared Emitting
0.8
3.0
0.2
1.5
0.2
3.5
0.2
17.5
0.5
2
-
0.45
2
-
0.9
0.3
MAX.
GL4800
880
920
960
Wavelength
( nm )
20
0
40
60
80
100
Relative radiant intensity
(
%
)
0
10
20
30
40
0
25
100
50
75 85
100
Duty ratio
10
- 3
10
10
- 2
10
- 1
0
25
50
75
100
975
950
925
900
0
25
50
75
100
Relative radiant flux
1
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
25C
0C
20C
50C
50
60
20
50
200
500
2
5
2
5
2
5
900
940
980
0.2
0.5
2
5
10
20
3.5
Fig. 1 Forward Current vs.
Ambient Temperature
Forward current I
(
mA
)
Fig. 2 Peak Forward Current vs. Duty Ratio
Peak forward current I
FM
(
mA
)
Fig. 3 Spectral Distribution
I
F
= const.
Peak emission wavelength
P
(
nm
)
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
Fig. 5 Forward Current vs. Forward Voltage
Fig. 6 Relative Radiant Flux vs.
Ambient Temperature
Forward current I
F
(
mA
)
500
200
100
50
20
10
5
2
1
Forward voltage V
F
(V)
F
Ambient temperature T
a
( C )
Ambient temperature T
a
( C )
Ambient temperature T
a
( C )
Pulse width
<=100
s
T
a
= 25C
I
F
= 5mA
T
a
= 25C
T
a
= 75C
1
- 25
- 25
- 25
10000
5000
2000
1000
1000
1000
1020
1040
I
F
=
const.
-
GL4800
Relative radiant intensity
(
%
)
Distance to detector d ( mm )
0.1
0.1
1
10
100
1
10
100
10
1
0.1
100
10
1
0.01
0.02
0.05
0.2
0.5
2
5
DC
100
10
1
100
10
1
0.1
0.1
Distance to detector d ( mm)
Relative collector current
(
%
)
80
60
40
20
100
+ 90
+ 80
+ 70
+ 50
+ 60
+ 40
+ 30
+ 20
+ 10
0
0
Angular displacement
Fig. 7 Radiant Flux vs. Forward Current
Fig.10 Radiation Diagram
Radiant flux
e
(
mW
)
Forward current I
F
( mA )
Fig. 9 Relative Collector Current vs.
Fig. 8 Relative Radiant Intensity vs.
Distance
Distance
(Detector
:
PT4800 )
Relative radiant intensity
(
%
)
Pulse
(Pulse
width <=100
s)
T
a
= 25C
T
a
= 25C
(T
a
= 25C)
- 10
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
1000
I
F
= 20mA
T
a
= 25C
q Please refer to the chapter " Precautions for Use."
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