LH28F004SU-Z1

4M (512K × 8) Flash Memory

FEATURES

512K × 8 Word Configuration

5 V Write/Erase Operation (5 V V

)

No Requirement for DC/DC Converter

to Write/Erase

100 ns Maximum Access Time

32 Independently Lockable Blocks (16K)

100,000 Erase Cycles per Block

Automated Byte Write/Block Erase
Command User Interface
Status Register
RY

/BY

Status Output

System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Full Chip Erase

Data Protection
Hardware Erase/Write Lockout during

Power Transitions

Software Erase/Write Lockout

Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)

5 µA (Typ.) I

in CMOS Standby

0.2 µA (Typ.) Deep Power-Down

State-of-the-Art 0.55 µm ETOXTM Flash
Technology

40-pin, 1.2 mm × 10 mm × 20 mm TSOP
(Type I) Package

Figure 1. TSOP Configuration

28F004SUT-Z1-1

TOP VIEW

40-PIN TSOP

GND

RY/BY

4M (512K × 8) Flash Memory

LH28F004SU-Z1

SYMBOL

TYPE

NAME AND FUNCTION

- A

INPUT

WORD-SELECT ADDRESSES:

Select a word within one 16K block. These

addresses are latched during Data Writes.

- A

INPUT

BLOCK-SELECT ADDRESSES:

Select 1 of 32 Erase blocks. These addresses are

latched during Data Writes, Erase and Lock-Block operations.

- DQ

INPUT/OUTPUT

DATA INPUT/OUTPUT:

Inputs data and commands during CUI write cycles.

Outputs array, buffer, identifier or status data in the appropriate Read mode.
Floated when the chip is de-selected or the outputs are disabled.

INPUT

CHIP ENABLE INPUT:

Activate the device's control logic, input buffers, decoders

and sense amplifiers. CE

must be low to select the device.

INPUT

RESET/POWER-DOWN:

low places the device in a Deep Power-Down state. All

circuits that burn static power, even those circuits enabled in standby mode, are
turned off. When returning from Deep Power-Down, a recovery time of 550 ns is
required to allow these circuits to power-up. When RP

goes low, any current or

pending WSM operation(s) are terminated, and the device is reset. All Status
Registers return to ready (with all status flags cleared).

INPUT

OUTPUT ENABLE:

Gates device data through the output buffers when low. The

outputs float to tri-state off when OE

is high.

INPUT

WRITE ENABLE:

Controls access to the CUI, Data Queue Registers and Address

Queue Latches. WE is active low, and latches both address and data (command or
array) on its rising edge.

/BY

OPEN DRAIN
OUTPUT

READY/BUSY:

Indicates status of the internal WSM. When low, it indicates that the

WSM is busy performing an operation. When the WSM is ready for new operation
or Erase is Suspended, or the device is in deep power-down mode RY

/BY

pin is

floated.

SUPPLY

ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V):

For erasing memory array blocks

or writing words/bytes into the flash array.

SUPPLY

DEVICE POWER SUPPLY (5.0 V ±0.5 V):

Do not leave any power pins floating.

GND

SUPPLY

GROUND FOR ALL INTERNAL CIRCUITRY:

Do not leave any ground pins floating.

NO CONNECT:

No internal connection to die, lead may be driven or left floating

PIN DESCRIPTION

LH28F004SU-Z1

4M (512K × 8) Flash Memory

INTRODUCTION

Sharp's LH28F004SU-Z1 4M Flash Memory is a revo-

lutionary architecture which enables the design of truly
mobile, high performance, personal computing and com-
munication products. With innovative capabilities, 5 V
single voltage operation and very high read/write per-
formance, the LH28F004SU-Z1 is also the ideal choice
for designing embedded mass storage flash memory
systems.

The LH28F004SU-Z1 is a very high density, highest

performance non-volatile read/write solution for solid-
state storage applications. Its independently lockable
32 symmetrical blocked architecture (16K each)
extended cycling, low power operation, very fast write
and read performance and selective block locking pro-
vide a highly flexible memory component suitable for
high density memory cards, Resident Flash Arrays and
PCMCIA-ATA Flash Drives. The LH28F004SU-Z1's
single power supply operation enables the design of
memory cards which can be read/written in 5.0 V sys-
tems. Its x8 architecture allows the optimization of
memory to processor interface. The flexible block lock-
ing option enables bundling of executable application
software in a Resident Flash Array or memory card.
Manufactured on Sharp's 0.55 µm ETOXTM process
technology, the LH28F004SU-Z1 is the most cost-
effective, high-density 5.0 V flash memory.

Description

The LH28F004SU-Z1 is a high perfor mance

4M (4,194,304 bit) block erasable non-volatile random
access memor y organized as 512K × 8. The
LH28F004SU-Z1 includes thirty-two 16K (16,384)
blocks. A chip memory map is shown in Figure 3.

The implementation of a new architecture, with many

enhanced features, will improve the device operating
characteristics and results in greater product reliability
and ease of use.

Among the significant enhancements of the

LH28F004SU-Z1:

· 5 V Read, Write/Erase Operations (5 V V

, V

)

· Low Power Capability

· Improved Write Performance

· Dedicated Block Write/Erase Protection

· Command-Controlled Memory Protection

Set/Reset Capability

The LH28F004SU-Z1 will be available in a 40-pin,

1.2 mm thick × 10 mm × 20 mm TSOP (Type I) pack-
age. This form factor and pinout allow for very high board
layout densities.

A Commander User Interface (CUI) serves as the

system interface between the microprocessor or
microcontroller and the internal memory operation.

Internal Algorithm Automation allows Byte Writes and

Block Erase operations to be executed using a Two-
Write command sequence to the CUI in the same way
as the LH28F008SA 8M Flash Memory.

A Superset of commands have been added to the

basic LH28F008SA command-set to achieve higher
write performance and provide additional capabilities.
These new commands and features include:

· Software Locking of Memory Blocks

· Memory Protection Set/Reset Capability

· Two-Byte Successive Writes in 8-bit Systems

· Erase All Unlocked Blocks

Writing of memory data is performed typically within

13 µs. A Block Erase operation erases one of the 32
blocks in typically 0.6 seconds, independent of the other
blocks.

LH28F004SU-Z1 allows to erase all unlocked blocks.

It is desirable in case you have to implement Erase op-
eration maxmum 32 times.

LH28F004SU-Z1 enables Two-Byte serial Write which

is operated by three times command input. This feature
can improve system write performance by up to typi-
cally 10 µs per byte.

All operations are started by a sequence of Write

commands to the device. Status Register (described in
detail later) and a RY

/BY

output pin provide informa-

tion on the progress of the requested operation.

Same as the LH28F008SA, LH28F004SU-Z1

requires an operation to complete before the next
operation can be requested, also it allows to suspend
block erase to read data from any other block, and al-
low to resume erase operation.

The LH28F004SU-Z1 provides user-selectable block

locking to protect code or data such as Device Drivers,
PCMCIA card information, ROM-Executable OS or
Application Code. Each block has an associated non-
volatile lock-bit which determines the lock status of the
block. In addition, the LH28F004SU-Z1 has a software
controlled master Write Protect circuit which prevents
any modifications to memory blocks whose lock-bits are
set.

4M (512K × 8) Flash Memory

LH28F004SU-Z1

Figure 3. Memory Map

When the device power-up or RP

turns High, Write

Protect Set/Confirm command must be written. Other-
wise, all lock bits in the device remain being locked,
can't perform the Write to each block and single Block
Erase. Write Protect Set/Confirm command must be
written to reflect the actual lock status. However, when
the device power-on or RP

turns High, Erase All Un-

locked Blocks can be used. If used, Erase is performed
with reflecting actual lock status, and after that Write
and Block Erase can be used.

The LH28F004SU-Z1 contains Status Register to

accomplish various functions:

· A Compatible Status Register (CSR) which is

100% compatible with the LH28F008SA Flash
Memory's Status Register. This register, when used
alone, provides a straightforward upgrade capabil-
ity to the LH28F004SU-Z1 from a LH28F008SA
based design.

The LH28F004SU-Z1 incorporates an open drain

/BY

output pin. This feature allows the user to OR-

tie many RY

/BY

pins together in a multiple memory con-

figuration such as a Resident Flash Array.

The LH28F004SU-Z1 is specified for a maximum

access time of 100 ns (t

ACC

) at 5 V operation (4.5 to

5.5 V) over the commercial temperature range (0 to
+70°C).

The LH28F004SU-Z1 incorporates an Automatic

Power Saving (APS) feature which substantially reduces
the active current when the device is in static mode of
operation (addresses not switching).

In APS mode, the typical I

current is 2 mA at 5.0 V.

A Deep Power-Down mode of operation is invoked

when the RP

(called PWD on the LH28F008SA) pin

transitions low. This mode brings the device power con-
sumption to less than 5 µA, and provides additional write
protection by acting as a device reset pin during power
transitions. A reset time of 550 ns is required from RP

switching high until outputs are again valid. In the Deep
Power-Down state, the WSM is reset (any current
operation will abort) and the CSR register is cleared.

A CMOS Standby mode of operation is enabled when

transitions high and RP

stays high with all input

control pins at CMOS levels. In this mode, the device
draws an I

standby current of 10 µA.

MEMORY MAP

7C000H

7FFFFH

7BFFFH

78000H

77FFFH

74000H

73FFFH

70000H

6FFFFH

6C000H

6BFFFH

68000H

67FFFH

64000H

63FFFH

60000H

5FFFFH

5C000H

5BFFFH
58000H

57FFFH

54000H

53FFFH

50000H

4FFFFH

4C000H

4BFFFH

48000H

47FFFH

44000H

43FFFH

40000H

3FFFFH

3C000H

3BFFFH

38000H

37FFFH

34000H

33FFFH

30000H

2FFFFH

2C000H

2BFFFH

28000H

27FFFH

24000H

23FFFH

20000H

1FFFFH

1C000H

1BFFFH

18000H

17FFFH

14000H

13FFFH

10000H

0FFFFH

0C000H

0BFFFH

08000H

07FFFH

04000H

03FFFH

00000H

16KB BLOCK

28F004SUT-Z1-3

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