PC451
PC451
s
Absolute Maximum Ratings
s
Outline Dimensions
(Unit : mm)
*1 The derating factors of absolute maximum ratings due to ambient temperature are
shown in Fig.2 to 5
*2 40 to 60%RH, AC for 1 min
*3 For 10 s
Parameter
Symbol
Rating
Unit
Forward current
I
F
50
mA
mA
Reverse voltage
Input
Output
V
R
6
V
V
Power dissipation
Collector-emitter voltage
P
70
Collector power dissipation
Collector current
Total power dissipation
150
350
50
mW
mW
mW
P
tot
I
C
P
C
V
CEO
V
Emitter-collector voltage
6
V
ECO
V
iso (rms)
kV
170
Operating temperature
T
opr
-
40 to
+
125
-
25 to
+
100
C
C
Storage temperature
Isolation voltage
T
stg
*2
*1
*1
*1
*1
*3
Soldering temperature
T
sol
260
3.75
C
(Ta
=
25
C)
1. Telephones
2. Modems
s
Features
s
Applications
s
Package Specifications
Mini-Flat Package, High
Collector-emitter Voltage Type
Photocoupler
1. High collector-emitter voltage
V
CEO
:350V
2. Soldering reflow type
3. Recognized by UL, file No. E64380
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet
Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
Model No.
Diameter of reel Tape width
13.5mm
13.5mm
370mm
180mm
Package specification
PC451
PC451T
PC451Z
Taping package (3 000pcs.)
Taping package (750pcs.)
Sleeve package (100pcs.)
-
-
3.6
0.3
2.54
0.25
4
3
4.4
0.2
4 5 1
1
2
0.4
0.1
Anode mark
Epoxy resin
2.6
0.2
0.1
0.1
6
0.2
0.05
5.3
0.3
45
0.5
+
0.4
-
0.2
7.0
+
0.2
-
0.7
Internal connection diagram
1
2
4
3
1
2
3
4
Anode
Cathode
Emitter
Collector
0.2mm or more
Soldering area
PC451
Parameter
Conditions
Input
Forward voltage
I
F
=
20mA
Terminal capacitance
Output
V
CE
=
200V, I
F
=
0
Collector-emitter breakdown voltage
I
C
=
0.1mA, I
F
=
0
Transfer
charac-
teristics
Collector current
I
F
=
5mA, V
CE
=
5V
Collector-emitter saturation voltage
I
F
=
20mA, I
C
=
1mA
Isolation resistance
DC500V, 40 to 60%RH
Floating capacitance
Cut-off frequency
V
=
0, f
=
1MHz
Response time
Rise time
Fall time
MIN.
-
-
-
350
2
-
5
10
10
-
-
-
TYP.
1.2
30
-
0.1
-
50
4
10
11
0.6
4
5
MAX.
1.4
250
1000
-
-
-
0.3
-
-
1.0
10
12
Collector dark current
Symbol
V
F
C
t
I
CEO
BV
CEO
I
C
f
C
V
CE(sat)
C
f
t
r
t
f
R
ISO
V
=
0, f
=
1kHz
Unit
V
Reverse current
V
R
=4V
-
-
10
I
R
A
nA
V
mA
kHz
V
pF
pF
s
s
V
CE
=
5V, I
C
=
2mA, R
L
=
100
,
-
3dB
V
CE
=
2V
I
C
=
2mA
R
L
=
100
(Ta
=
25C)
s
Electro-optical Characteristics
Forward current I
F
(mA)
Ambient temperature T
a
(C)
0
30
40
50
60
20
10
-
25
0
25
75
100
125
50 55
Forward current I
F
(mA)
Ambient temperature T
a
(C)
0
60
80
100
70
120
40
20
25
-
28
0
25
50 55
75
100
125
Fig.1
Forward Current vs. Ambient
Temperature
Fig.2
Diode Power Dissipation vs.
Ambient Temperature
PC451
Power dissipation P
tot
(mW
)
0
250
200
150
170
50
100
-
25
0
25
50
75
100
125
Ambient temperature T
a
( C )
Peak forward current I
FM
(
m
A
)
Duty ratio
5
10
20
100
50
200
500
10 000
5 000
2 000
1 000
5
2
5
2
5
2
5
1
10
-
3
10
-
2
10
-
1
Pulse width
100
s
T
a
= 25C
Fig.4
Power Dissipation vs. Ambient
Temperature
Fig.6
Forward Current vs. Forward Voltage
Fig.5
Peak Forward Current vs. Duty Ratio
Fig.8
Collector Current vs. Collector-emitter
Voltage
Fig.7
Current Transfer Ratio vs. Forward
Current
Forward current I
F
(mA)
10
20
50
100
200
500
2
5
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward voltage V
F
(V)
T
a
= 75C
50C
25C
0C
-
25C
Current transfer ratio CTR (
%
)
0
100
50
1
2
5
10
20
100
50
Forward current I
F
( mA )
V
CE
=5V
T
a
= 25C
Collector current I
C
(m
A)
0
20
10
0
5
10
Collector-emitter voltage V
CE
( V )
I
F
=
30mA
25mA
20mA
15mA
10mA
5mA
T
a
=
25C
P
C
( MAX. )
Collector power dissipation P
C
(m
W)
Ambient temperature T
a
(C )
0
100
200
50
150
-
25
0
25
50
75
100
125
Fig.3
Collector Power Dissipation vs.
Ambient Temperature
PC451
Collector-emitter saturation voltage V
CE(sat)
(V
)
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
-
25
0
25
50
75
100
Ambient temperature T
a
( C )
I
F
=20mA
I
C
=1mA
Collector dark current I
CEO
(A)
10
-
5
10
-
6
10
-
7
10
-
8
10
-
9
10
-
10
10
-
11
-
25
25
0
50
75
100
Ambient temperature T
a
( C )
V
CE
=200V
Fig.10
Collector - emitter Saturation Voltage
vs. Ambient Temperature
Fig.12
Response Time vs. Load Resistance
Fig.11
Collector Dark Current vs. Ambient
Temperature
Fig.14
Voltage gain A(dB) vs. Frequency
Fig.13
Test Circuit for Response Time
Response time (
s)
0.2
0.1
0.5
1
2
5
10
100
200
500
20
50
0.01
0.1
1
10
50
Load resistance R
L
( k
)
t
r
t
f
t
d
t
s
V
CE
=2V
T
a
=25C
I
C
=2mA
Voltage gain A
v
(dB)
Frequency f ( kHz )
0
-
10
-
20
0.5 1
2
5
10
500
200
100
50
V
CE
=
5V
I
C
=
2mA
T
a
=
25C
100
1k
R
L
=
10k
20
10%
Input
Output
Input
Output
90%
t
s
t
d
V
CC
R
D
R
L
t
f
t
r
Fig.9
Relative Current Transfer Ratio vs.
Ambient Temperature
Relative current transfer ratio (
%
)
100
0
50
150
-
25
0
25
50
75
100
Ambient temperature T
a
( C )
I
F
=
5mA
V
CE
=
5V
PC451
Fig.15
Test Circuit Frepuency Response
Fig.16
Collector-emitter Saturation Voltage
vs. Forward Current
0
1
2
3
4
5
6
0
2
6
10
14
18 20
16
12
8
4
Collector-emitter saturation voltage V
CE(sat)
(V)
Forward current I
F
( mA )
7mA
1mA
3mA
5mA
I
C
= 0.5mA
T
a
=
25C
V
CC
R
L
Output
R
D
PDF 
ZIP