Photothyristor Coupler
S22MD1V/S22MD3
s
Features
1. High repetitive peak OFF-state voltage
( V
DRM
2. Low trigger current
( I
FT
: MAX. 10mA at R
G
= 20k
)
3. High isolation voltage between input and
output
s
Applications
1. ON-OFF operation for a low power load
2. For triggering high power thyristor and
triac
s
Outline Dimensions
( Unit : mm)
S22MD1V
mark
Anode
Internal connection diagram
Anode mark
S22MD3
Internal connection diagram
S22MD1V
S22MD3
1
2
3
4
5
6
1
2
3
4
5
6
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
1 4 Anode
2 3 Cathode
5 8 Gate
6 7 Anode/
Cathode
S22MD1V
V
iso
S22MD3V
V
iso
g
S22MD1V
and
S22MD3
are for 200V line.
: MIN. 600V )
S22MD1V/S22MD3
gg TUV ( DIN-VDE0884 ) approved type is also available as an option.
4. Recognized by UL, file NO. 64380
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
are also available (
)
g Lead forming type ( I type ) and taping reel type ( P type ) of
S22MD1V
S22MD1VI/S22MD1P
: 5 000V
rms
: 2 500V
rms
:
0 to 13
6.5
0.5
2.54
0.25
0.9
0.2
1.2
0.3
7.12
0.5
3.5
0.5
0.5
TYP.
0.5
0.1
3.7
0.5
3.35
0.5
7.62
0.3
0.26
0.1
:
0 to 13
2.54
0.25
0.8
0.2
0.85
0.3
1.2
0.3
9.22
0.5
3.5
0.5
0.5
TYP.
3.0
0.5
0.5
0.1
0.26
0.1
7.62
0.3
..
s
Electro-optical Characteristics
Parameter
Conditions
Input
Output
(Ta= 25C )
MIN.
TYP.
MAX.
Unit
-
1.2
1.4
V
-
-
10
-5
A
-
-
10
-6
A
-
-
10
-6
A
-
1.0
1.4
V
-
0.2
1
mA
5
-
-
V/
s
3
-
-
-
-
10
mA
5 x 10
10
10
11
-
-
20
50
s
Symbol
V
F
I
R
I
DRM
I
RRM
V
T
I
H
I
FT
R
ISO
t
on
I
F
= 30mA
V
R
= 3V
V
DRM
= Rated, R
G
= 20k
V
RRM
= Rated, R
G
= 20k
I
T
= 200mA
V
D
= 6V, R
G
= 20k
V
D
= 6V, R
G
= 20k
, R
L
= 100
, I
F
= 30mA
Transfer
charac-
teristics
Parameter
Symbol
Rating
Unit
S22MD1V
S22MD3
Input
Forward current
I
F
50
mA
Reverse voltage
V
R
6
V
Output
I
T
200
1
Peak one cycle surge current
I
surge
2
A
V
DRM
600
V
2
Repetitive peak reverse voltage
V
RRM
600
-
V
3
Isolation voltage
V
iso
Operating temperature
T
opr
-30 to +100
-30 to +100
C
Storage temperature
T
stg
-55 to +125
-40 to +125
C
4
Soldering temperature
T
sol
260
C
s
Absolute Maximum Ratings
(Ta = 25C )
1 50H
Z
, sine wave
2 R
G
= 20k
4 For 10 seconds
5 Applies only to
S22MD1V
2
V
DRM
= 1/ Rated, R
G
= 20k
S22MD1V/S22MD3
RMS ON-state current
2
Repetitive peak OFF-state voltage
Forward voltage
Reverse current
Repetitive peak OFF-state current
5
Repetitive peak reverse current
ON-state voltage
Holding current
Critical rate of
rise of OFF-state voltage
Minimum trigger current
Isolation resistance
Turn-on time
S22MD1V
S22MD3
V
D
= 6V, R
L
= 100
, R
G
= 20k
3 40 to 60% RH, AC for 1 minute
DC500V, 40 to 60% RH
5 000
2 500
mA
rms
V
rms
dV/dt
S22MD1V/S22MD3
- 30
0
20
40
60
80
100
0
T
rms
)
Ambient temperature T
a
(C)
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
- 30
0
25
50
75
100
125
0
10
20
30
40
50
60
70
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
5
10
20
50
100
200
500
50C
25C
0C
- 25C
Fig. 3 Forward Current vs. Forward Voltage
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
T
a
= 75C
- 30
0
20
40
60
80
100
0
2
4
6
8
10
12
20k
50k
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
R
G
= 10k
Ambient temperature T
a
(C)
Minimum trigger current I
FT
(
mA
)
1
2
5
10
20
50
100
200
1
2
5
10
20
50
100
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
Minimum trigger current I
FT
(
mA
)
Gate resistance R
G
-30 -20
0
20
40
60
80
100 120
0
100
200
300
400
500
600
700
800
900
20k
Fig. 6 Break Over Voltage vs.
Break over voltage V
BO
(
V
)
Ambient temperature T
a
(C)
R
G
= 10k
V
D
= 6V
R
L
= 100
V
D
= 6V
R
L
= 100
T
a
= 25C
(
mA
RMS ON-state current I
100
200
( k
)
Ambient Temperature
50k
S22MD1V/S22MD3
0
20
40
60
80
100
1
2
5
10
20
50
100
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
Ambient temperature T
a
(C)
R
G
= 20k
V
DRM
= 1/ Rated
2
0
20
40
60
80
100
2
5
2
5
2
5
Fig. 9 Repetitive Peak OFF-state Current vs.
DRM
(
A
)
Ambient temperature T
a
(C)
V
DRM
= Rated
R
G
= 20k
2
5
10
- 6
10
- 7
10
- 8
Critical rate of rise of OFF-state voltage
Ambient Temperature
Repetitive peak OFF-state current I
- 30
0
20
40
60
80
100
0.01
0.02
0.05
0.1
0.2
0.5
1
20k
50k
Fig. 8 Holding Current vs.
Ambient Temperature
Holding current I
H
(
mA
)
Ambient temperature T
a
( C)
R
G
= 10k
V
D
= 6V
dV/dt
(V/
s
)
S22MD1V/S22MD3
3
2
1
6
5
4
3
2
1
6
5
4
+
V
CC
V
IN
+
V
CC
V
IN
C
G
R
G
Z
S
Load
Z
S
:
Snubber circuit
C
G
R
G
Load
s
Basic Operation Circuit
Low Power Load Drive Circuit
+
V
CC
V
IN
+
V
CC
V
IN
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
R
G
C
G
R
G
C
G
Z
S
Load
Z
S
:
Snubber circuit
R
G
C
G
R
G
C
G
Load
q
S22MD1V
q
S22MD3
AC 100V, 200V
AC 100V, 200V
AC 100V, 200V
AC 100V, 200V
Medium/High Power Thyristor Drive Circuit
Medium/High Power Triac Drive Circuit (Zero-cross Operation)
Medium/High Power Triac Drive Circuit
q
Please refer to the chapter " Precautions for Use" ( Page 78 to 93 ) .
115
Application Circuits
NOTICE
qThe circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
qContact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
qObserve the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
qContact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
qIf the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
qThis publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
qContact and consult with a SHARP representative if there are any questions about the contents of this
publication.
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