Semiconductor Group
1
Mar-01-1996
BAT 14-03W
Silicon Schottky Diode
DBS mixer application to 12GHz
Medium barrier type
Low capacitance
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 14-03W O/white
Q62702-A1103
1 = A
2 = C
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
4
V
Forward current
I
F
90
mA
Operating temperature range
T
op
- 55 ... + 125 C
Storage temperature
T
stg
- 55 ... + 150
Total power dissipation
T
S
85C
P
tot
100
mW
Thermal Resistance
Junction ambient
1)
R
thJA
450
K/W
Junction - soldering point
R
thJS
690
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Mar-01-1996
BAT 14-03W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
4
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
0.48
0.36
0.55
0.43
0.66
0.52
Diode capacitance
V
R
= 0 ,
f = 1 MHz
C
T
-
0.22
0.35
pF
Differential forward resistance
I
F
10mA/ 50 mA
R
F
-
5.5
-
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
R
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
T
PDF 
ZIP
