Semiconductor Group
Jan-15-1998
Page 1
HITFET
BSP 78
Preliminary data
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown with
auto restart
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
Product Summary
Drain source voltage
V
40
V
DS
On-state resistance
R
DS(on)
50
m
Nominal load current
I
D(Nom)
3
A
Clamping energy
mJ
E
AS
500
Application
All kinds of resistive, inductive and capacitive loads in switching or linear
applications
C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
technology. Fully protected by embedded
protection functions.
Pin
Symbol
Function
1
IN
Input
2
DRAIN
Output to the load
3
SOURCE
Ground
TAB
DRAIN
Output to the load
Semiconductor Group
Jan-15-1998
Page 2
Preliminary data
BSP 78
Block Diagram
p r o t e c t i o n
O v e r v o l t a g e
Drain
IN
E S D
H I T F E T
Source
C u r r e n t
O v e r -
p r o t e c t i o n
t e m p e r a t u r e
S h o r t c i r c u i t
p r o t e c t i o n
+
lim i t a t i o n
Vb b
S h o r t c i r c u i t
p r o t e c t i o n
L O A D
O v e r l o a d
p r o t e c t i o n
M
U n it
G a t e - D r i v i n g
Semiconductor Group
Jan-15-1998
Page 3
Preliminary data
BSP 78
Maximum Ratings at T
j
= 25C, unless otherwise specified
Parameter
Value
Unit
Symbol
V
40
V
DS
Drain source voltage
Drain source voltage for
short circuit protection
40
V
DS(SC)
Continuous input voltage
V
IN
-0.2 ... +10
Peak input voltage (
I
IN
2 mA)
V
IN(peak)
-0.2 ...
V
DS
Operating temperature
T
j
C
-40 ...+150
Storage temperature
T
stg
-55 ...+150
Power dissipation,
T
C
= 85 C
P
tot
W
1.7
Unclamped single pulse inductive energy
F)
E
AS
500
mJ
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
2000
V
ESD
kV
E
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
K/W
R
thJA
junction - ambient:
@ min. footprint
@ 6 cm
2
cooling area
F)
125
72
junction-soldering point:
R
thJS
17
K/W
1
not tested, specified by design
2
Device on 50mm+50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for Drain
connection. PCB is vertical without blown air.
Semiconductor Group
Jan-15-1998
Page 4
Preliminary data
BSP 78
Electrical Characteristics
Parameter
Symbol
Unit
Values
at
T
j
= 25C, unless otherwise specified
min.
max.
typ.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
mess
= 10 mA
-
V
DS(AZ)
40
55
V
I
DSS
-
-
Off-state drain current
T
j
= -40 ... +150C
V
IN
= 0 V,
V
DS
= 32 V
10
A
Input treshold voltage
I
D
= 0.7 mA
1.7
1.3
V
2.2
V
IN(th)
I
IN(on)
On state input current
30
A
10
-
R
DS(on)
On-state resistance
I
D
= 3 A,
V
IN
= 5 V,
T
j
= 25 C
I
D
= 3 A,
V
IN
= 5 V,
T
j
= 150 C
m
60
120
-
-
45
75
R
DS(on)
On-state resistance
I
D
= 3 A,
V
IN
= 10 V,
T
j
= 25 C
I
D
= 3 A,
V
IN
= 10 V,
T
j
= 150 C
50
100
35
65
-
-
I
D(Nom)
Nominal load current
V
DS
= 0.5 V,
T
S
= 85 C,
T
j
< 150C,
V
IN
= 10 V
-
-
A
3
A
I
D(lim)
Current limit (active if
V
DS
>2.5 V)
V
IN
= 10 V,
V
DS
= 12 V
16
24
32
Dynamic Characteristics
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 5
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
t
on
-
60
150
s
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 5
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
t
off
-
60
150
Slew rate on 70 to 50%
V
bb
:
R
L
= 5
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
-dV
DS
/dt
on
-
0.4
1
V/s
Slew rate off 50 to 70%
V
bb
:
R
L
= 5
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
dV
DS
/dt
off
-
0.7
1
Semiconductor Group
Jan-15-1998
Page 5
Preliminary data
BSP 78
Electrical Characteristics
Parameter
Symbol
Unit
Values
at
T
j
= 25C, unless otherwise specified
typ.
min.
max.
Protection Functions
C
150
T
jt
Thermal overload trip temperature
165
-
Thermal hysteresis
T
jt
-
10
K
-
300
Input current protection mode
-
-
I
IN(Prot)
A
Unclamped single pulse inductive energy
F)
I
D
= 3 A,
T
j
= 25 C,
V
bb
= 12 V
I
D
= 3 A,
T
j
= 150 C,
V
bb
= 12 V
E
AS
500
300
-
-
-
-
mJ
Inverse Diode
Continuous source drain voltage
V
IN
= 0 V, -
I
D
= 5*3 A,
t
P
= 300 s
-
1.1
-
V
V
SD
1
not tested, specified by design
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