Semiconductor Group
1
04.97
TEMPFET
BTS 114A
3
2
1
Features
q
N channel
q
Enhancement mode
q
Temperature sensor with thyristor characteristic
q
The drain pin is electrically shorted to the tab
Pin
1
2
3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BTS 114A
50 V
17 A
0.10
TO-220AB
C67078-S5000-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
50
V
Drain-gate voltage,
R
GS
= 20 k
V
DGR
50
Gate-source voltage
V
GS
20
Continuous drain current,
T
C
= 27
C
I
D
17
A
ISO drain current
T
C
= 85
C,
V
GS
= 10 V,
V
DS
= 0.5 V
I
D-ISO
3.8
Pulsed drain current,
T
C
= 25
C
I
D puls
68
Short circuit current,
T
j
= 55 ... + 150
C
I
SC
37
Short circuit dissipation,
T
j
= 55 ... + 150
C
P
SCmax
550
W
Power dissipation
P
tot
50
Operating and storage temperature range
T
j
,
T
stg
55 ... + 150
C
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55/150/56
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
2.5
75
K/W
Semiconductor Group
2
Electrical Characteristics
at
T
j
= 25
C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0
, I
D
= 0.25 mA
V
(BR)DSS
50
V
Gate threshold voltage
V
GS
=
V
DS
, I
D
= 1.0 mA
V
GS(th)
2.5
3.0
3.5
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 50 V
T
j
= 25
C
T
j
= 125
C
I
DSS
0.1
10
1.0
100
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
T
j
= 25
C
T
j
= 150
C
I
GSS
10
2
100
4
nA
A
Drain-source on-state resistance
V
GS
= 10 V
, I
D
= 9.0 A
R
DS(on)
0.08
0.10
Dynamic Characteristics
Forward transconductance
V
DS
2
I
D
R
DS(on)max
,
I
D
=9 A
g
fs
5.0
8.0
S
Input capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
C
iss
450
600
pF
Output capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
C
oss
220
350
Reverse transfer capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
C
rss
85
150
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3.0 A,
R
GS
= 50
t
d(on)
20
30
ns
t
r
40
60
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3.0 A,
R
GS
= 50
t
d(off)
55
70
t
f
40
60
BTS 114A
Semiconductor Group
3
Electrical Characteristics (cont'd)
at
T
j
= 25
C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous source current
I
S
17
A
Pulsed source current
I
SM
68
Diode forward on-voltage
I
F
= 30 A,
V
GS
= 0
V
SD
1.5
1.8
V
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 30 V
t
rr
60
ns
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 30 V
Q
rr
0.10
C
Temperature Sensor
Forward voltage
I
TS(on)
= 10 mA,
T
j
= 55 ... + 150
C
Sensor override,
t
p
100
s
T
j
= 55 ... + 160
C
V
TS(on)
1.4
1.5
10
V
Forward current
T
j
= 55 ... + 150
C
Sensor override,
t
p
100
s
T
j
= 55 ... + 160
C
I
TS(on)
10
600
mA
Holding current,
V
TS(off)
= 5.0 V,
T
j
= 25
C
T
j
= 150
C
I
H
0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
V
TS
= 5.0 V
T
TS(on)
C
Turn-off time
V
TS
= 5.0 V,
I
TS(on)
= 2 mA
t
off
0.5
2.5
s
BTS 114A
Semiconductor Group
4
Examples for short-circuit protection
at
T
j
= 55 ... + 150
C, unless otherwise specified
Parameter
Symbol
Examples
Unit
1
2
Drain-source voltage
V
DS
15
30
V
Gate-source voltage
V
GS
7.2
5.2
Short-circuit current
I
SC
37
17
A
Short-circuit dissipation
P
SC
550
510
W
Response time
T
j
= 25
C, before short circuit
t
SC(off)
25
25
ms
BTS 114A
Short-circuit protection
I
SC
=
f
(
V
DS
)
Parameter
: V
GS
Diagram to determine
I
SC
for
T
j
= 55 ... + 150
C
Max. gate voltage
V
GS(SC)
=
f
(
V
DS
)
Parameter:
T
j
= 55 ... + 150
C
Semiconductor Group
5
Max. power dissipation
P
tot
=
f
(
T
C
)
Typical output characteristics
I
D
=
f
(
V
DS
)
Parameter
: t
p
= 80
s
Typ. drain-source on-state resistance
R
DS(on)
=
f
(
I
D
)
Parameter
: V
GS
Safe operating area
I
D
=
f
(
V
DS
)
Parameter:
D
= 0.01,
T
C
= 25
C
BTS 114A
Semiconductor Group
6
Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
Parameter:
I
D
= 9 A,
V
GS
= 10 V
Typ. transfer characteristic
I
D
=
f
(
V
GS
)
Parameter
: t
p
= 80
s,
V
DS
= 25 V
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
Parameter
: V
DS
=
V
GS
,
I
D
= 1 mA (spread)
Typ. transconductance
g
fs
=
f
(
I
D
)
Parameter:
t
p
= 80
s,
V
DS
= 25 V
BTS 114A
Semiconductor Group
7
Continuous drain current
I
D
=
f
(
T
C
)
Parameter:
V
GS
10 V
Typ. gate-source leakage current
I
GSS
=
f
(
T
C
)
Parameter:
V
GS
= 20 V,
V
DS
= 0
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
Parameter
: T
j
,
t
p
= 80
s (spread)
Typ. capacitances
C
=
f
(
V
DS
)
Parameter:
V
GS
= 0,
f
= 1 MHz
BTS 114A
Semiconductor Group
8
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
Parameter
: D
=
t
p
/
T
BTS 114A
Semiconductor Group
9
BTS 114A
Package Outlines
TO 220 AB
Ordering Code
Standard
C67078-S5000-A2
TO 220 AB
Ordering Code
SMD Version E3044
C67078-S5000-A8
TO 220 AB
Ordering Code
Tape & reel E3045 A C67078-S5000-A11
3.7
9.5
9.9
4.6
0.75
1.05
2.54
2.54
17.5
2.8
12.8
0.5
2.4
13.5
9.2
15.6
1.3
4.4
GPT05155
1)
3) max. 14.5 by dip tinning press burr max. 0.05
2) dip tinning
1) punch direction, burr max. 0.04
3)
2)
1
PDF 
ZIP