PROFET BTS 410 D2
Semiconductor Group
1
03.97
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
CMOS diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of
V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1
)
With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
65
V
Operating voltage
V
bb(on)
4.7 ... 42 V
On-state resistance
R
ON
220 m
Load current (ISO)
I
L(ISO)
1.8
A
Current limitation
I
L(SCr)
5
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 410 D2
Semiconductor Group
2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
65
V
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
,
R
L
= 6.6
,
t
d
= 400 ms, IN= low or high
V
Load dump
4
)
100
V
Load current (Short circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
50
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150C,
T
C
=
150C const.
I
L
=
1.8
A, Z
L
=
2.3
H, 0
:
E
AS
4.5
J
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1
2
kV
Input voltage (DC)
V
IN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
5.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
2.5
75
K/W
SMD version, device on PCB
5)
:
--
35
--
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k
resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 410 D2
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 1.6 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
190
390
220
440
m
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 C
I
L(ISO)
1.6
1.8
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 7,
T
j
=-40...+150C
I
L(GNDhigh)
--
--
1
mA
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
12
5
--
--
125
85
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
d
V /dt
on
--
--
3
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
-d
V/dt
off
--
--
6
V/
s
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150C:
V
bb(on)
4.7
--
42
V
Undervoltage shutdown
T
j
=25C:
T
j
=-40...+150C:
V
bb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart
T
j
=-40...+150C:
V
bb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 12
V
bb(ucp)
--
5.6
6.0
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.1
--
V
Overvoltage shutdown
T
j
=-40...+150C:
V
bb(over)
42
--
52
V
Overvoltage restart
T
j
=-40...+150C:
V
bb(o rst)
40
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
--
0.1
--
V
Overvoltage protection
7
)
T
j
=-40...+150C:
I
bb
=4 mA
V
bb(AZ)
65
70
--
V
Standby current (pin 3)
T
j
=-40...+25C
:
V
IN
=0, I
ST
0
,
T
j
= 150C:
I
bb(off)
--
--
10
18
15
25
A
Leakage output current (included in
I
bb(off)
)
V
IN
=0
I
L(off)
--
--
20
A
Operating current (Pin 1)
8)
,
V
IN
=5 V,
T
j
=-40...+150C
I
GND
--
1
2.1
mA
6
)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
V
bb
- 2 V
7)
Meassured without load
.
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
BTS 410 D2
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
9
)
,
(
max 450
s if
V
ON
>
V
ON(SC)
)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
9
--
4
--
12
--
23
--
15
A
Overload shutdown current limit
I
L(SCr)
V
ON
= 8 V,
T
j
=
T
jt
(see timing diagrams, page 10)
--
5
--
A
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150C:
min value valid only, if input "low" time exceeds 60
s
t
d(SC)
--
--
450
s
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA,
T
j
=-40..+150C:
V
ON(CL)
61
68
73
V
I
L
= 1 A,
T
j
=-40..+150C:
--
--
75
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.5
--
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Reverse battery (pin 3 to 1)
10
)
-
V
bb
--
--
32
V
Diagnostic Characteristics
Open load detection current
(on-condition)
T
j
=-40 ..150C:
I
L (OL)
2
--
150
mA
8
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
9
)
Short circuit current limit for max. duration of t
d(SC) max
=450
s, prior to shutdown
10
) Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
BTS 410 D2
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
5
Input and Status Feedback
11
)
Input turn-on threshold voltage
T
j
=-40..+150C:
V
IN(T+)
1.5
--
2.4
V
Input turn-off threshold voltage
T
j
=-40..+150C:
V
IN(T-)
1.0
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 2),
V
IN
= 0.4 V
I
IN(off)
1
--
30
A
On state input current (pin 2),
V
IN
= 5 V
I
IN(on)
10
25
70
A
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150C:
t
d(ST SC)
--
--
450
s
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
t
d(ST)
300
--
1400
s
Status output (CMOS)
T
j
=-40...+150C,
I
ST
= - 50
A:
T
j
=-40...+150C,
I
ST
= +1.6 mA:
Max. status current for
current source
(out):
valid status output,
current sink
(in) :
T
j
=-40...+150C
V
ST(high)
12
)
V
ST(low)
-I
ST
+I
ST
13)
4.4
--
--
--
5.1
--
--
--
6.5
0.4
0.25
1.6
V
mA
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
12
) VSt high
V
bb
during undervoltage shutdown
13
) No current sink capability during undervoltage shutdown
BTS 410 D2
Semiconductor Group
6
Truth Table
Input-
Output
Status
level
level
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
L
H
L
H
H
H
H
H
H
H
H
H
H
H
Open load
L
H
14)
H
L
H
H
L
H
L
H
L
L
H
Short circuit
to GND
L
H
L
L
H
L
H
L
H
L
H
H
H
L
Short circuit
to V
bb
L
H
H
H
L
H
H
H (L
15)
)
H
H (L
15)
)
H
H (L
15)
)
L
H
Overtem-
perature
L
H
L
L
L
L
L
L
L
L
L
L
L
L
Under-
voltage
L
H
L
L
L
16)
L
16)
L
16)
L
16)
H
H
H
H
H
H
Overvoltage
L
H
L
L
L
L
L
L
H
H
H
H
H
H
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
14
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
15
) Low resistance short
V
bb
to output may be detected in ON-state by the no-load-detection
16
) No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
V
IN
I ST
I IN
V
bb
Ibb
I L
VOUT
I
GND
VON
1
2
4
3
5
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ZD
ZD
I
I
I1
I2
ESD-
ZD
I1
6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status output
ST
V
Logic
GND
ESD-
ZD
Zener diode: 6 V typ., max 5.0 mA, V
Logic
5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
BTS 410 D2
Semiconductor Group
7
Short circuit detection
Fault Condition:
V
ON
> 8.5 V typ.; IN high
Short circuit
detection
Logic
unit
+ Vbb
OUT
V
ON
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
PROFET
V
Z
V
ON
V
ON
clamped to 68 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
V
Z2
V
Z1
V
Z1
= 6.2 V typ.,
V
Z2
= 70 V typ.,
R
GND
= 150
, R
IN
,
R
ST
= 15 k
Open-load detection
ON-state diagnostic condition:
V
ON
<
R
ON
*
I
L(OL)
; IN
high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
V
ON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is
V
OUT
V
IN
-
V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
IN
V
ST
Any kind of load. If V
GND >
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
BTS 410 D2
Semiconductor Group
8
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
V
bb
disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
V
bb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
I N
S T
O U T
G N D
b b
=
E
E
E
E AS
b b
L
R
ELoad
L
RL
{
Z
L
Energy stored in load inductance:
E
L
=
1/2
L
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
i
L
(t) dt,
with an approximate solution for R
L
>
0
:
E
AS
=
I
L
L
2
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (I
L
);
T
j,start
=
150C,
T
C
=
150C const.,
V
bb
=
12
V,
R
L
=
0
L
[mH]
1
10
100
1000
10000
1
2
3
4
5
6
I
L [A]
Typ. transient thermal impedance chip case
Z
thJC
=
f
(t
p
, D), D=t
p
/T
Z
thJC
[K/W]
0.01
0.1
1
10
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
t
p [s]
BTS 410 D2
Semiconductor Group
9
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150
in GND connection, protection against loss of
ground
Type
BTS 412 B2 410D2 410E2 410F2 410G2 410H2
307
308
Logic version
B
D
E
F
G
H
Overtemperature protection with hysteresis
Tj >150 C, latch function
17)18)
Tj >150 C, with auto-restart on cooling
X
X
X
X
X
X
X
X
Short circuit to GND protection
switches off when
V
ON
>3.5 V typ. and
V
bb
> 7 V
typ
17)
(when first turned on after approx. 150
s)
X
X
switches off when
V
ON
>8.5 V typ.
17)
(when first turned on after approx. 150
s)
Achieved through overtemperature protection
X
X
X
X
X
X
Open load detection
in OFF-state with sensing current 30
A typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Overvoltage shutdown with auto restart
19
)
X
X
X
X
X
X
-
X
Status feedback for
overtemperature
short circuit to GND
short to V
bb
open load
undervoltage
overvoltage
X
X
X
X
X
X
X
X
-
20)
X
X
X
X
X
-
20)
X
-
-
X
X
-
20)
X
-
-
X
-
-
20)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
-
-
Status output type
CMOS
Open drain
X
X
X
X
X
X
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to
V
bb
-
V
ON(CL)
X
X
X
X
X
X
X
X
Load current limit
high level
(can handle loads with high inrush currents)
low level
(better protection of application)
X
X
X
X
X
X
X
X
Protection against loss of GND
X
X
X
X
X
X
X
X
17
) Latch except when
V
bb
-
V
OUT
<
V
ON(SC)
after shutdown. In most cases
V
OUT
= 0 V after shutdown (
V
OUT
0 V only if forced externally). So the device remains latched unless
V
bb
<
V
ON(SC)
(see page 4). No latch
between turn on and t
d(SC)
.
18)
With latch function. Reseted by a) Input low, b) Undervoltage
19
) No auto restart after overvoltage in case of short circuit
20
) Low resistance short
V
bb
to output may be detected in ON-state by the no-load-detection
BTS 410 D2
Semiconductor Group
10
Timing diagrams
Figure 1a: V
bb
turn on:
IN
V
OUT
t
V
ST CMOS
bb
A
A
t
d(bb IN)
in case of too early VIN=high the device may not turn on (curve A)
t
d(bb IN)
approx. 150
s
Figure 2a: Switching a lamp,
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
*)
OUT
t
d(ST)
I
L(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
IN
ST
OUT
L
t
V
I
td(SC)
td(SC) approx. --
s if V
bb
- V
OUT
> 8.5 V typ.
BTS 410 D2
Semiconductor Group
11
Figure 3b: Turn on into overload,
IN
ST
L
t
I
L(SCr)
I
L(SCp)
I
Heating up may require several seconds,
V
bb
- V
OUT
< 8.5 V typ.
Figure 3c: Short circuit while on:
IN
ST
OUT
L
t
V
I
**)
**) current peak approx. 20
s
Figure 4a: Overtemperature,
Reset if (IN=low) and (
T
j
<
T
jt
)
IN
ST
OUT
J
t
V
T
*) ST goes high , when VIN=low and Tj<Tjt
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open
t
d(ST)
BTS 410 D2
Semiconductor Group
12
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
OUT
L
t
V
I
open
normal
normal
t
d(ST OL1)
t
d(ST OL2)
t
d(ST OL1)
= tbd
s typ., t
d(ST OL2)
= tbd
s typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST CMOS
V
V
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
V
bb(u rst)
V
bb(over)
V
bb(o rst)
V
bb(u cp)
off-state
on-state
V
ON(CL)
V
bb
V
on
off-state
charge pump starts at V
bb(ucp)
=5.6 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
V
bb(over)
V
bb(o rst)
if V
bb
> V
bb(AZ)
increase of V
ST
due to GND resistor voltage.
BTS 410 D2
Semiconductor Group
13
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
OUT
t
V
bb
ST
I
L
V bb(o rst)
Output short to GND
short circuit shutdown
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
BTS 410 D2
Semiconductor Group
14
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
Ordering code
BTS 410 D2
Q67060-S6101-A2
TO-220AB/5, Option E3043
Ordering code
BTS 410 D2 E3043
Q67060-S6101-A3
SMD TO-220AB/5, Opt. E3062
Ordering code
BTS410D2 E3062A T&R:
Q67060-S6101-A4
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