PROFET BTS 410 F2
Semiconductor Group
1
03.97
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of
V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1
)
With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
65
V
Operating voltage
V
bb(on)
4.7 ... 42 V
On-state resistance
R
ON
220 m
Load current (ISO)
I
L(ISO)
1.8
A
Current limitation
I
L(SCr)
2.7
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 410 F2
Semiconductor Group
2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
65
V
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
,
R
L
= 6.6
,
t
d
= 400 ms, IN= low or high
V
Load dump
4
)
100
V
Load current (Short circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
50
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150C,
T
C
=
150C const.
I
L
=
1.8
A, Z
L
=
2.3
H, 0
:
E
AS
4.5
J
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1
2
kV
Input voltage (DC)
V
IN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
5.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
2.5
75
K/W
SMD version, device on PCB
5)
:
--
35
--
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k
resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 410 F2
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 1.6 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
190
390
220
440
m
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 C
I
L(ISO)
1.6
1.8
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 7,
T
j
=-40...+150C
I
L(GNDhigh)
--
--
1
mA
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
12
5
--
--
125
85
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
d
V /dt
on
--
--
3
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
-d
V/dt
off
--
--
6
V/
s
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150C:
V
bb(on)
4.7
--
42
V
Undervoltage shutdown
T
j
=25C:
T
j
=-40...+150C:
V
bb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart
T
j
=-40...+150C:
V
bb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 12
V
bb(ucp)
--
5.6
6.0
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.1
--
V
Overvoltage shutdown
T
j
=-40...+150C:
V
bb(over)
42
--
52
V
Overvoltage restart
T
j
=-40...+150C:
V
bb(o rst)
40
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
--
0.1
--
V
Overvoltage protection
7
)
T
j
=-40...+150C:
I
bb
=4 mA
V
bb(AZ)
65
70
--
V
Standby current (pin 3)
T
j
=-40...+25C
:
V
IN
=0
T
j
= 150C:
I
bb(off)
--
--
10
18
15
25
A
Leakage output current (included in
I
bb(off)
)
V
IN
=0
I
L(off)
--
--
20
A
Operating current (Pin 1)
8)
,
V
IN
=5 V,
T
j
=-40...+150C
I
GND
--
1
2.1
mA
6
)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
V
bb
- 2 V
7)
Meassured without load
.
See also
V
ON(CL)
in table of protection functions and circuit diagram page 6.
BTS 410 F2
Semiconductor Group
4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
9
)
,
(
max 450
s if
V
ON
>
V
ON(SC)
)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
4.0
3.5
2.0
--
5.5
3.5
11
10
7.5
A
Overload shutdown current limit
I
L(SCr)
V
ON
= 8 V,
T
j
=
T
jt
(see timing diagrams, page 10)
--
2.7
--
A
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150C:
min value valid only, if input "low" time exceeds 60
s
t
d(SC)
--
--
450
s
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA,
T
j
=-40..+150C:
V
ON(CL)
61
68
73
V
I
L
= 1 A,
T
j
=-40..+150C:
--
--
75
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.5
--
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Reverse battery (pin 3 to 1)
10
)
-
V
bb
--
--
32
V
Diagnostic Characteristics
Open load detection current
(on-condition)
T
j
=-40 ..150C:
I
L (OL)
2
--
150
mA
Input and Status Feedback
11
)
Input turn-on threshold voltage
T
j
=-40..+150C:
V
IN(T+)
1.5
--
2.4
V
Input turn-off threshold voltage
T
j
=-40..+150C:
V
IN(T-)
1.0
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 2),
V
IN
= 0.4 V
I
IN(off)
1
--
30
A
On state input current (pin 2),
V
IN
= 5 V
I
IN(on)
10
25
70
A
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150C:
t
d(ST SC)
--
--
450
s
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
t
d(ST)
300
--
1400
s
Status output (open drain)
Zener limit voltage
T
j
=-40...+150C,
I
ST
= +50 uA:
ST low voltage
T
j
=-40...+150C,
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.0
--
6
--
--
0.4
V
8
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
9
)
Short circuit current limit for max. duration of t
d(SC) max
=450
s, prior to shutdown
10
) Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
BTS 410 F2
Semiconductor Group
5
Truth Table
Input-
Output
Status
level
level
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
L
H
L
H
H
H
H
H
H
H
H
H
H
H
Open load
L
H
12)
H
L
H
H
L
H
L
H
L
L
H
Short circuit
to GND
L
H
L
L
H
L
H
L
H
L
H
H
H
L
Short circuit
to V
bb
L
H
H
H
L
H
H
H (L
13)
)
H
H (L
13)
)
H
H (L
13)
)
L
H
Overtem-
perature
L
H
L
L
L
L
L
L
L
L
L
L
L
L
Under-
voltage
L
H
L
L
L
14)
L
14)
L
14)
L
14)
H
H
H
H
H
H
Overvoltage
L
H
L
L
L
L
L
L
H
H
H
H
H
H
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
12
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
13
) Low resistance short
V
bb
to output may be detected in ON-state by the no-load-detection
14
) No current sink capability during undervoltage shutdown
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