PROFET BTS 432 D2
Semiconductor Group
1
04.96
Smart Highside Power Switch
Features
Load dump and reverse battery protection
1)
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of V
bb
protection
2)
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Application
C compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS
chip on chip technology. Fully protected by embedded protection
functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
R
bb
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
V
Load dump
80
V
V
bb
-V
OUT
Avalanche Clamp
58
V
V
bb (operation)
4.5 ... 42
V
V
bb (reverse)
-32
V
R
ON
38
m
I
L(SCp)
44
A
I
L(SCr)
35
A
I
L(ISO)
11
A
5
BTS 432 D2
Semiconductor Group
2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
63
V
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
= 2
,
R
L
= 1.1
,
t
d
= 200 ms, IN= low or high
V
s
3
)
66.5
V
Load current (Short-circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC)
P
tot
125
W
Inductive load switch-off energy dissipation,
single pulse
T
j
=150 C:
E
AS
1.7
J
Electrostatic discharge capability (ESD)
(Human Body Model)
V
ESD
2.0
kV
Input voltage (DC)
V
IN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
I
IN
I
ST
5.0
5.0
mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
1
75
K/W
SMD version, device on pcb
4)
:
tbd
3)
V
S
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
4
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 432 D2
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
30
55
38
70
m
Nominal load current (pin 3 to 5)
ISO Proposal:
V
ON
= 0.5 V,
T
C
= 85 C
I
L(ISO)
9
11
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up, V
IN
= 0, see diagram page 7,
T
j
=-40...+150C
I
L(GNDhigh)
--
--
1
mA
Turn-on time
to 90%
V
OUT
:
Turn-off time
to 10%
V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
50
10
160
--
300
80
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
d
V /dt
on
0.4
--
2.5
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
-d
V/dt
off
1
--
5
V/
s
Operating Parameters
Operating voltage
5
)
T
j
=-40...+150C:
V
bb(on)
4.5
--
42
V
Undervoltage shutdown
T
j
=-40...+150C:
V
bb(under)
2.4
--
4.5
V
Undervoltage restart
T
j
=-40...+150C:
V
bb(u rst)
--
--
4.5
V
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150C:
V
bb(ucp)
--
6.5
7.5
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.2
--
V
Overvoltage shutdown
T
j
=-40...+150C:
V
bb(over)
42
--
52
V
Overvoltage restart
T
j
=-40...+150C:
V
bb(o rst)
42
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
--
0.2
--
V
Overvoltage protection
6
)
T
j
=-40C:
I
bb
=40 mA
T
j
=25...+150C:
V
bb(AZ)
60
63
--
67
--
V
Standby current (pin 3)
T
j
=-40...+25C
:
V
IN
=0, I
ST
=0
,
T
j
=150C:
I
bb(off)
--
--
12
18
25
60
A
Leakage output current (included in
I
bb(off)
)
V
IN
=0
I
L(off)
--
6
--
A
Operating current (Pin 1)
7)
,
V
IN
=5 V
I
GND
--
1.1
--
mA
5
)
At supply voltage increase up to
V
bb
= 6.5 V typ without charge pump,
V
OUT
V
bb
- 2 V
6)
see also
V
ON(CL)
in table of protection functions and circuit diagram page 7. Meassured without load
.
7
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
BTS 432 D2
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
8
)
,
(
max 400
s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit
I
L(SCr)
T
j
=
T
jt
(see timing diagrams, page 10)
22
35
--
A
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150C:
min value valid only, if input "low" time exceeds 30
s
t
d(SC)
80
--
400
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL),
I
L
= 30 mA
V
ON(CL)
--
58
--
V
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.3
--
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Inductive load switch-off energy dissipation
9)
,
T
j Start
= 150 C, single pulse
V
bb
= 12 V:
V
bb
= 24 V:
E
AS
E
Load12
E
Load24
--
--
1.7
1.3
1.0
J
Reverse battery (pin 3 to 1)
10
)
-
V
bb
--
--
32
V
Integrated resistor in V
bb
line
R
bb
--
120
--
Diagnostic Characteristics
Open load detection current
T
j
=-40 C
:
(on-condition)
T
j
=25..150C:
I
L (OL)
2
2
--
--
900
750
mA
8
)
Short circuit current limit for max. duration of 400
s, prior to shutdown (see t
d(SC)
page 4)
9)
While demagnetizing load inductance, dissipated energy in PROFET is
E
AS
=
V
ON(CL)
*
i
L
(t) dt, approx.
E
AS
=
1
/
2
*
L
*
I
2
L
* (
V
ON(CL)
V
ON(CL)
-
V
bb
), see diagram page 8
10
) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150
). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
BTS 432 D2
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
5
Input and Status Feedback
11
)
Input turn-on threshold voltage
T
j
=-40..+150C:
V
IN(T+)
1.5
--
2.4
V
Input turn-off threshold voltage
T
j
=-40..+150C:
V
IN(T-)
1.0
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 2)
V
IN
= 0.4 V:
I
IN(off)
1
--
30
A
On state input current (pin 2)
V
IN
= 3.5 V:
I
IN(on)
10
25
50
A
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150C:
t
d(ST SC)
80
200
400
s
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
t
d(ST)
350
--
1600
s
Status output (CMOS)
T
j
=-40...+150C,
I
ST
= - 50
A:
T
j
=-40...+150C,
I
ST
= +1.6 mA:
Max. status current for
current source
(out):
valid status output,
current sink
(in) :
T
j
=-40...+150C
V
ST(high)
12
)
V
ST(low)
-I
ST
+I
ST
13)
4.4
--
--
--
5.1
--
--
--
6.5
0.4
0.25
1.6
V
mA
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
12
) VSt high
V
bb
during undervoltage shutdown
13
) No current sink capability during undervoltage shutdown
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