BTS 612 N1
Semiconductor Group
1
Smart Two Channel Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of
V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
+ V bb
IN1
ST
Signal GND
ESD
PROFET
OUT1
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1
protection
Current
limit 1
3
5
2
4
1
Load GND
Load
V
Logic
Overvoltage
protection
OUT2
Open load
detection 2
Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit for
unclamped
ind. loads 2
Gate 2
protection
Current
limit 2
7
IN2
6
Charge
pump 1
Charge
pump 2
1
)
With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
43
V
Operating voltage
V
bb(on)
5.0 ... 34
V
channels:
each
both
parallel
On-state resistance
R
ON
200
100 m
Load current (ISO)
I
L(ISO)
2.3
4.4
A
Current limitation
I
L(SCr)
4
4
A
TO-220AB/7
1
7
Standard
1
7
Straight leads
1
7
SMD
BTS 612 N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
2
Pin
Symbol
Function
1
OUT1 (Load, L)
Output 1, protected high-side power output of channel 1
2
GND
Logic ground
3
IN1
Input 1, activates channel 1 in case of logical high signal
4
Vbb
Positive power supply voltage,
the tab is shorted to this pin
5
ST
Diagnostic feedback: open drain, low on failure
6
IN2
Input 2, activates channel 2 in case of logical high signal
7
OUT2 (Load, L)
Output 2, protected high-side power output of channel 2
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
43
V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150C
V
bb
34
V
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
,
R
L
= 5.3
,
t
d
= 200 ms, IN= low or high
V
Load dump
4
)
60
V
Load current (Short circuit current, see page 5)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
36
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150C,
T
C
=
150C const.
one channel,
I
L
=
2.3
A, Z
L
=
89
mH, 0
:
E
AS
290
mJ
both channels parallel,
I
L
=
4.4
A, Z
L
=
47
mH, 0
:
580
see diagrams on page 9
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1.0
2.0
kV
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 8
I
IN
I
ST
2.0
5.0
mA
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k
resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 612 N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
3
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case, both channels:
each channel:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
--
--
3.5
7.0
75
K/W
SMD version, device on PCB
5)
:
37
Electrical Characteristics
Parameter and Conditions,
each channel
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
I
L
= 1.8 A
T
j
=25 C:
each channel
T
j
=150 C:
R
ON
--
160
320
200
400
m
Nominal load current, ISO Norm (pin 4 to 1 or 7)
V
ON
= 0.5 V,
T
C
= 85 C
each channel:
both channels parallel:
I
L(ISO)
1.8
3.5
2.3
4.4
--
--
A
Output current (pin
1
or 7) while GND disconnected
or GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 9
I
L(GNDhigh)
--
--
10
mA
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
80
80
200
200
400
400
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
d
V /dt
on
0.1
--
1
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
-d
V/dt
off
0.1
--
1
V/
s
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 612 N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
4
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150C:
V
bb(on)
5.0
--
34
V
Undervoltage shutdown
T
j
=-40...+150C:
V
bb(under)
3.5
--
5.0
V
Undervoltage restart
T
j
=-40...+25C:
T
j
=+150C:
V
bb(u rst)
--
--
5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 12
V
bb(ucp)
--
5.6
7.0
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.2
--
V
Overvoltage shutdown
T
j
=-40...+150C:
V
bb(over)
34
--
43
V
Overvoltage restart
T
j
=-40...+150C:
V
bb(o rst)
33
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
--
0.5
--
V
Overvoltage protection
7
)
T
j
=-40...+150C:
I
bb
=40 mA
V
bb(AZ)
42
47
--
V
Standby current (pin 4)
,
V
IN
=0
T
j
=-40...+150C:
I
bb(off)
--
90
150
A
Operating current (Pin 2)
8)
,
V
IN
=5 V
both channels on, T
j
=-40...+150C,
I
GND
--
0.6
1.2
mA
Operating current (Pin 2)
8)
one channel on, T
j
=-40...+150C:,
I
GND
--
0.4
0.7
mA
6)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
V
bb
- 2 V
7)
See also
V
ON(CL)
in table of protection functions and circuit diagram page 8.
8
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
BTS 612 N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
5
Protection Functions
Initial peak short circuit current limit (pin 4 to 1
or 7)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
5.5
4.5
2.5
9.5
7.5
4.5
13
11
7
A
Repetitive short circuit shutdown current limit
I
L(SCr)
T
j
=
T
jt
(see timing diagrams, page 11)
--
4
--
A
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA:
V
ON(CL)
41
47
53
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Reverse battery (pin 4 to 2)
9
)
-
V
bb
--
--
32
V
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -1.9 A, each channel
T
j
=150 C:
-V
ON(rev)
--
610
--
mV
Diagnostic Characteristics
Open load detection current
(included in standby current
I
bb(off)
)
I
L(off)
--
30
--
A
Open load detection voltage
T
j
=-40..150C:
V
OUT(OL)
2
3
4
V
9
)
Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
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