PROFET BTS 707
Semiconductor Group
1
08.96
Smart Two Channel Highside Power Switch
Features
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
Fast demagnetization of inductive loads
Reverse battery protection
1)
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
Symbol
Function
1,10,
11,12,
15,16,
19,20
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
3
IN1
Input 1,2, activates channel 1,2 in case of
7
IN2
logic high signal
17,18
OUT1
Output 1,2, protected high-side power output
13,14
OUT2
of channel 1,2. Design the wiring for the max.
short circuit current
4
ST1
Diagnostic feedback 1,2 of channel 1,2,
8
ST2
open drain, low in on state on failure or high in
off state on failure
2
GND1
Ground 1 of chip 1 (channel 1)
6
GND2
Ground 2 of chip 2 (channel 2)
5,9
N.C.
Not Connected
1
)
With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage Protection
V
bb(AZ)
65
V
Operating voltage
V
bb(on)
5.8 ... 58
V
active channels:
one
two parallel
On-state resistance
R
ON
250
125
m
Nominal load current
I
L(NOM)
1.9
2.8
A
Pin configuration
(top view)
V
bb
1
20 V
bb
GND1 2
19 V
bb
IN1 3
18 OUT1
ST1 4
17 OUT1
N.C. 5
16 V
bb
GND2 6
15 V
bb
IN2 7
14 OUT2
ST2 8
13 OUT2
N.C. 9
12 V
bb
V
bb
10
11 V
bb
BTS 707
Semiconductor Group
2
Block diagram
IN1
ST1
ESD
Logic
Voltage
sensor
Voltage
source
Open load
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Gate
protection
Current
limit
3
4
V
Logic
Overvoltage
protection
Signal-
GND1
1
Chip 1
Chip 1
IN2
ST2
PROFET
7
8
6
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Signal-
GND2
Chip 2
Chip 2
+ Vbb
OUT1
Leadframe
17,18
Load GND
Load
+ Vbb
OUT2
Leadframe
13,14
Load GND
Load
Logic and protection circuit of chip 2
(equivalent to chip 1)
Limit for
ind. loads
unclamped
Short circuit
detection
GND
GND
Maximum Ratings at T
j
= 25C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
65
V
Supply voltage for full short circuit protection
T
j,start
=
-40 ...+150C
V
bb
40
V
Load current (Short-circuit current, see page 5)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
BTS 707
Maximum Ratings at T
j
= 25C unless otherwise specified
Parameter
Symbol
Values
Unit
Semiconductor Group
3
Power dissipation (DC)
2)
T
a
= 25C:
(all channels active)
T
a
= 85C:
P
tot
3
1.6
W
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
V
ESD
1.0
tbd (>1.0)
kV
Input voltage (DC)
V
IN
-0.5 ... +36
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 7
I
IN
I
ST
2.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
junction - soldering point
2),3)
each channel:
R
thjs
--
--
18
K/W
junction - ambient
2)
one channel active:
all channels active:
R
thja
--
--
45
37
--
--
2
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 12
3
)
Soldering point: upper side of solder edge of device pin 15. See page 12
Electrical Characteristics
Parameter and Conditions,
each of the two channels
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
I
L
= 2 A
each channel,
T
j
= 25C:
V
bb
= 24 V
T
j
= 150C:
two parallel channels,
T
j
= 25C:
R
ON
--
225
400
113
250
500
125
m
Nominal load current
one channel active:
two parallel channels active:
Device on PCB
2)
,
T
a
=
85C,
T
j
150C
I
L(NOM)
1.60
2.4
1.9
2.8
--
A
Output current while GND disconnected or pulled
up; V
bb
=
32 V,
V
IN
= 0, see diagram page 8
I
L(GNDhigh)
--
--
1.1
mA
BTS 707
Parameter and Conditions,
each of the two channels
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
4
Turn-on time
to 90%
V
OUT
:
Turn-off time
to 10%
V
OUT
:
R
L
=
12
,
V
bb
= 20 V
,
T
j
=-40...+150C
t
on
t
off
15
20
--
--
80
70
s
Slew rate on
10 to 30%
V
OUT
,
R
L
=
12
,
V
bb
= 20 V
,
T
j
=-40...+150C:
d
V/dt
on
--
--
6
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
=
12
,
V
bb
= 20 V
,
T
j
=-40...+150C:
-d
V/dt
off
--
--
7
V/
s
Operating Parameters
Operating voltage
4
)
T
j
=-40...+150C:
V
bb(on)
5.8
--
58
V
Undervoltage shutdown
T
j
=-40...+150C:
V
bb(under)
2.7
--
4.7
V
Undervoltage restart
T
j
=-40...+150C:
V
bb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 11
T
j
=-40...+150C:
V
bb(ucp)
--
5.6
7.5
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.4
--
V
Overvoltage protection
5
)
T
j
=-40...+150C:
I
bb
=
40 mA
V
bb(AZ)
65
70
--
V
Standby current, all channels off
V
IN
=
0
T
j
=150C:
I
bb(off)
--
--
20
70
A
Operating current
6)
,
V
IN
=
5V, T
j
=-40...+150C
I
GND
=
I
GND1
+
I
GND2
,
one channel on:
two channels on:
I
GND
--
--
2.2
4.4
--
--
mA
Protection Functions
Initial peak short circuit current limit,
(see timing
diagrams, page 9)
each channel, T
j
=-40C:
T
j
=25C:
T
j
=+150C:
I
L(SCp)
--
--
4.0
--
10
--
19
--
--
A
two parallel channels
twice the current of one channel
Output clamp (inductive load switch off)
7)
at V
ON(CL)
= V
bb
- V
OUT
V
ON(CL)
59
--
75
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
4)
At supply voltage increase up to
V
bb
=
5.6
V typ without charge pump,
V
OUT
V
bb
- 2 V
5)
see also
V
ON(CL)
in circuit diagram on page 7.
6
)
Add
I
ST
, if
I
ST
> 0
7
)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
BTS 707
Parameter and Conditions,
each of the two channels
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
5
Reverse Battery
Reverse battery voltage
8
)
-
V
bb
--
--
32
V
Diagnostic Characteristics
Open load detection current
I
L(off)
--
6
--
A
Open load detection voltage
T
j
=-40..+150C:
V
OUT(OL)
2.4
3
4
V
Short circuit detection voltage
(pin 3 to 5)
V
ON(SC)
--
2.5
--
V
Input and Status Feedback
9
)
Input resistance
(see circuit page 7)
R
I
--
20
--
k
Input turn-on threshold voltage
V
IN(T+)
1
--
2.5
V
Input turn-off threshold voltage
V
IN(T-)
0.8
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current
V
IN
= 0.4 V:
I
IN(off)
1
--
30
A
On state input current
V
IN
= 2.5 V:
I
IN(on)
10
25
70
A
Delay time for status with open load
(see timing diagrams, page 10)
t
d(ST OL3)
--
200
--
s
Status output (open drain)
Zener limit voltage
T
j
=-40...+150C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+150C,
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
8
)
Requires a 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
9)
If ground resistors R
GND
are used, add the voltage drop across these resistors.
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