PROFET BTS 712 N1
Semiconductor Group
1
06.96
Smart Four Channel Highside Power Switch
Features
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
(including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
Symbol
Function
1,10,
11,12,
15,16,
19,20
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
3
IN1
Input 1 .. 4, activates channel 1 .. 4 in case of
5
IN2
logic high signal
7
IN3
9
IN4
18
OUT1
Output 1 .. 4, protected high-side power output
17
OUT2
of channel 1 .. 4. Design the wiring for the
14
OUT3
max. short circuit current
13
OUT4
4
ST1/2
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8
ST3/4
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2
GND1/2
Ground 1/2 of chip 1 (channel 1 and channel 2)
6
GND3/4
Ground 3/4 of chip 2 (channel 3 and channel 4)
1
)
With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage Protection
V
bb(AZ)
43
V
Operating voltage
V
bb(on)
5.0 ... 34
V
active channels:
one
two parallel four parallel
On-state resistance
R
ON
200
100
50
m
Nominal load current
I
L(NOM)
1.9
2.8
4.4
A
Current limitation
I
L(SCr)
4
4
4
A
Pin configuration
(top view)
V
bb
1
20 V
bb
GND1/2 2
19 V
bb
IN1 3
18 OUT1
ST1/2 4
17 OUT2
IN2 5
16 V
bb
GND3/4 6
15 V
bb
IN3 7
14 OUT3
ST3/4 8
13 OUT4
IN4 9
12 V
bb
V
bb
10
11 V
bb
BTS 712 N1
Semiconductor Group
2
Block diagram
Four Channels; Open Load detection in off state;
+ V bb
IN1
ST1/2
ESD
OUT1
Logic
Voltage
sensor
Voltage
source
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1
protection
Current
limit 1
3
4
V
Logic
Overvoltage
protection
OUT2
Open load
detection 2
Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit for
unclamped
ind. loads 2
Gate 2
protection
Current
limit 2
IN2
5
Charge
pump 1
Charge
pump 2
Channel 2
Channel 1
Signal GND
GND1/2
2
Chip 1
Chip 1
+ V bb
IN3
ST3/4
PROFET
OUT3
7
8
OUT4
IN4
9
Channel 4
Channel 3
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Leadframe
18
17
Load GND
Load
Leadframe
14
13
Load GND
Load
Signal GND
GND3/4
6
Chip 2
Chip 2
Logic and protection circuit of chip 2
(equivalent to chip 1)
Maximum Ratings at T
j
= 25C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
43
V
Supply voltage for full short circuit protection
T
j,start
=
-40 ...+150C
V
bb
34
V
BTS 712 N1
Maximum Ratings at T
j
= 25C unless otherwise specified
Parameter
Symbol
Values
Unit
Semiconductor Group
3
Load current (Short-circuit current, see page 5)
I
L
self-limited
A
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
,
t
d
= 200
ms; IN
= low or high,
each channel loaded with
R
L
=
7.1
,
V
Load dump
4
)
60
V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC)
5
T
a
= 25C:
(all channels active)
T
a
= 85C:
P
tot
3.6
1.9
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150C
5)
,
I
L
=
1.9
A, Z
L
=
66
mH, 0
one channel:
I
L
=
2.8
A, Z
L
=
66
mH, 0
two parallel channels:
I
L
=
4.4
A, Z
L
=
66
mH, 0
four parallel channels:
see diagrams on page 9
E
AS
150
320
800
mJ
Electrostatic discharge capability (ESD)
(Human Body Model)
V
ESD
1.0
kV
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 8
I
IN
I
ST
2.0
5.0
mA
Thermal resistance
junction - soldering point
5),6)
each channel:
R
thjs
16
K/W
junction - ambient
5)
one channel active:
all channels active:
R
thja
44
35
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k
resistor in series with the status pin. A resistor for input
protection is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
6
)
Soldering point: upper side of solder edge of device pin 15. See page 14
BTS 712 N1
Semiconductor Group
4
Electrical Characteristics
Parameter and Conditions,
each of the four channels
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
I
L
= 1.8 A
each channel,
T
j
= 25C:
T
j
= 150C:
two parallel channels,
T
j
= 25C:
four parallel channels,
T
j
= 25C:
R
ON
--
165
320
83
42
200
400
100
50
m
Nominal load current
one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB
5)
,
T
a
=
85C,
T
j
150C
I
L(NOM)
1.7
2.6
4.1
1.9
2.8
4.4
--
A
Output current while GND disconnected or pulled
up; V
bb
=
30 V,
V
IN
= 0, see diagram page 9
I
L(GNDhigh)
--
--
10
mA
Turn-on time
to 90%
V
OUT
:
Turn-off time
to 10%
V
OUT
:
R
L
=
12
,
T
j
=-40...+150C
t
on
t
off
80
80
200
200
400
400
s
Slew rate on
10 to 30%
V
OUT
,
R
L
=
12
,
T
j
=-40...+150C:
d
V/dt
on
0.1
--
1
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
=
12
,
T
j
=-40...+150C:
-d
V/dt
off
0.1
--
1
V/
s
Operating Parameters
Operating voltage
7
)
T
j
=-40...+150C:
V
bb(on)
5.0
--
34
V
Undervoltage shutdown
T
j
=-40...+150C:
V
bb(under)
3.5
--
5.0
V
Undervoltage restart
T
j
=-40...+25C:
T
j
=+150C:
V
bb(u rst)
--
--
5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 13
T
j
=-40...+150C:
V
bb(ucp)
--
5.6
7.0
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.2
--
V
Overvoltage shutdown
T
j
=-40...+150C:
V
bb(over)
34
--
43
V
Overvoltage restart
T
j
=-40...+150C:
V
bb(o rst)
33
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
--
0.5
--
V
Overvoltage protection
8
)
T
j
=-40...+150C:
I
bb
=
40 mA
V
bb(AZ)
42
47
--
V
7)
At supply voltage increase up to
V
bb
=
5.6
V typ without charge pump,
V
OUT
V
bb
- 2 V
8)
see also
V
ON(CL)
in circuit diagram on page 8.
BTS 712 N1
Parameter and Conditions,
each of the four channels
Symbol
Values
Unit
at T
j
= 25 C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
5
Standby current, all channels off
T
j
=25C
:
V
IN
=
0
T
j
=150C:
I
bb(off)
--
--
180
160
300
300
A
Operating current
9)
,
V
IN
=
5V, T
j
=-40...+150C
I
GND
=
I
GND1/2
+
I
GND3/4
,
one channel on:
four channels on:
I
GND
--
--
0.35
1.2
0.8
2.8
mA
Protection Functions
Initial peak short circuit current limit,
(see timing
diagrams, page 11)
each channel, T
j
=-40C:
T
j
=25C:
T
j
=+150C:
I
L(SCp)
5.5
4.5
2.5
9.5
7.5
4.5
13
11
7
A
two parallel channels
twice the current of one channel
four parallel channels
four times the current of one channel
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
two parallel channels
four parallel channels
(see timing diagrams, page 11)
I
L(SCr)
--
--
--
4
4
4
--
--
--
A
Initial short circuit shutdown time
T
j,start
=-40C:
T
j,start
= 25C:
(see page 10 and timing diagrams on page 11)
t
off(SC)
--
--
5.5
4
--
--
ms
Output clamp (inductive load switch off)
10)
at V
ON(CL)
= V
bb
- V
OUT
V
ON(CL)
--
47
--
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Reverse Battery
Reverse battery voltage
11
)
-
V
bb
--
--
32
V
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
1.9
A,
T
j
=
+150C
-
V
ON
--
610
--
mV
Diagnostic Characteristics
Open load detection current
I
L(off)
--
30
--
A
Open load detection voltage
T
j
=-40..+150C:
V
OUT(OL)
2
3
4
V
9
)
Add
I
ST
, if
I
ST
> 0
10
) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
11
) Requires a 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
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