Semiconductor Group
1
Jul-17-1996
BSM 100 GD 120 DN2
IGBT Power Module
Preliminary data
Solderable Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
V
CE
I
C
Package
Ordering Code
BSM 100 GD 120 DN2
1200V 150A
ECONOPACK 3
C67070-A2517-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 80 C
I
C
100
150
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 80 C
I
Cpuls
200
300
Power dissipation per IGBT
T
C
= 25 C
P
tot
680
W
Chip temperature
T
j
+ 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
0.182
K/W
Diode thermal resistance, chip case
R
thJCD
0.36
Insulation test voltage,
t
= 1min.
V
is
2500
Vac
Creepage distance
-
16
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Semiconductor Group
2
Jul-17-1996
BSM 100 GD 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 4 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 100 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 100 A,
T
j
= 125 C
V
CE(sat)
-
-
3.1
2.5
3.7
3
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 C
I
CES
-
-
6
1.5
-
2
mA
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
-
400
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 100 A
g
fs
54
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
6.5
-
nF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
1
-
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
0.5
-
Semiconductor Group
3
Jul-17-1996
BSM 100 GD 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 100 A
R
Gon
= 6.8
t
d(on)
-
160
320
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 100 A
R
Gon
= 6.8
t
r
-
80
160
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 100 A
R
Goff
= 6.8
t
d(off)
-
400
520
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 100 A
R
Goff
= 6.8
t
f
-
70
100
Free-Wheel Diode
Diode forward voltage
I
F
= 100 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 100 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
1.8
2.3
-
2.8
V
Reverse recovery time
I
F
= 100 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -800 A/s,
T
j
= 125 C
t
rr
-
0.3
-
s
Reverse recovery charge
I
F
= 100 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -800 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
11
4
-
-
C
Semiconductor Group
5
Jul-17-1996
BSM 100 GD 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
20
40
60
80
100
120
140
160
A
200
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
20
40
60
80
100
120
140
160
A
200
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
20
40
60
80
100
120
140
160
A
200
I
C
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