Semiconductor Group
1
3.3V 4M x 64-Bit 2 BANK SDRAM Module
3.3V 4M x 72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64V4120GU-10
HYS72V4120GU-10
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module
for PC main memory applications
2 bank 4M x 64, 4M x 72 organisation
Optimized for byte-write non-parity or ECC applications
Fully PC66 layout compatible
JEDEC standard Synchronous DRAMs (SDRAM)
Performance:
Single +3.3V(
0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages
4096 refresh cycles every 64 ms
Gold contact pad
Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU
-10
f
CK
Max. Clock frequency
66 MHz @ CL=2
100 MHz @ CL=3
t
AC
Max. access time from clock
9 ns @ CL=2
8 ns @ CL=3
1
2.98
HYS64(72)V4120GU-10
4M x 64/72 SDRAM-Module
Semiconductor Group
2
The HYS64(72)V4120GU-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules
(DIMMs) which are organised as 4M x 64 and 4M x 72 in two banks high speed memory arrays
designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs
use 16 2M x 8 SDRAMs for the 4M x 64 organisation and additional two SDRAMs for the 4M x 72
organisation. Decoupling capacitors are mounted on the PC board.
The DIMMs have a serial presence detect, implemented with a serial E
2
PROM using the two pin I
2
C
protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are
available to the end user.
All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm
long footprint. This SDRAM module is available with a board-height of 1,15".
Ordering Information
Pin Names
Address Format:
Type
Package
Descriptions
Module
Height
HYS 64V4120GU-10
L-DIM-168-25
PC66 4M x 64 2 bank SDRAM module
1,15"
HYS 72V4120GU-10
L-DIM-168-25
PC66 4M x 72 2 bank SDRAM module
1,15"
A0-A10
Address Inputs( RA0 ~ RA10 / CA0 ~ CA8)
BS (A11)
Bank Select
DQ0 - DQ63
Data Input/Output
CB0-CB7
Check Bits (x72 organisation only)
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read / Write Input
CKE0, CKE1
Clock Enable
CLK0 - CLK3
Clock Input
DQMB0 - DQMB7
Data Mask
CS0 - CS3
Chip Select
Vcc
Power (+3.3 Volt)
Vss
Ground
SCL
Clock for Presence Detect
SDA
Serial Data Out for Presence Detect
N.C.
No Connection
Part Number
Rows
Columns
Bank Select
Refresh
Period
Interval
4M x 64
HYS 64V4120GU
11
9
1
4k
64 ms
15,6
s
4M x 72
HYS 72V4120GU
11
9
1
4k
64 ms
15,6
s
HYS64(72)V4120GU-10
4M x 64/72 SDRAM-Module
Semiconductor Group
3
Pin Configuration
Note : Pinnames in brackets are for the x72 ECC versions
PIN #
Symbol
PIN #
Symbol
PIN #
Symbol
PIN #
Symbol
1
VSS
43
VSS
85
VSS
127
VSS
2
DQ0
44
DU
86
DQ32
128
CKE0
3
DQ1
45
CS2
87
DQ33
129
CS3
4
DQ2
46
DQMB2
88
DQ34
130
DQMB6
5
DQ3
47
DQMB3
89
DQ35
131
DQMB7
6
VCC
48
DU
90
VCC
132
NC
7
DQ4
49
VCC
91
DQ36
133
VCC
8
DQ5
50
NC
92
DQ37
134
NC
9
DQ6
51
NC
93
DQ38
135
NC
10
DQ7
52
NC (CB2)
94
DQ39
136
CB6
11
DQ8
53
NC (CB3)
95
DQ40
137
CB7
12
VSS
54
VSS
96
VSS
138
VSS
13
DQ9
55
DQ16
97
DQ41
139
DQ48
14
DQ10
56
DQ17
98
DQ42
140
DQ49
15
DQ11
57
DQ18
99
DQ43
141
DQ50
16
DQ12
58
DQ19
100
DQ44
142
DQ51
17
DQ13
59
VCC
101
DQ45
143
VCC
18
VCC
60
DQ20
102
VCC
144
DQ52
19
DQ14
61
NC
103
DQ46
145
NC
20
DQ15
62
DU
104
DQ47
146
DU
21
NC (CB0)
63
CKE1
105
NC (CB4)
147
NC
22
NC (CB1)
64
VSS
106
NC (CB5)
148
VSS
23
VSS
65
DQ21
107
VSS
149
DQ53
24
NC
66
DQ22
108
NC
150
DQ54
25
NC
67
DQ23
109
NC
151
DQ55
26
VCC
68
VSS
110
VCC
152
VSS
27
WE
69
DQ24
111
CAS
153
DQ56
28
DQMB0
70
DQ25
112
DQMB4
154
DQ57
29
DQMB1
71
DQ26
113
DQMB5
155
DQ58
30
CS0
72
DQ27
114
CS1
156
DQ59
31
DU
73
VCC
115
RAS
157
VCC
32
VSS
74
DQ28
116
VSS
158
DQ60
33
A0
75
DQ29
117
A1
159
DQ61
34
A2
76
DQ30
118
A3
160
DQ62
35
A4
77
DQ31
119
A5
161
DQ63
36
A6
78
VSS
120
A7
162
VSS
37
A8
79
CLK2
121
A9
163
CLK3
38
A10
80
NC
122
A11=BS
164
NC
39
NC
81
NC
123
NC
165
SA0
40
VCC
82
SDA
124
VCC
166
SA1
41
VCC
83
SCL
125
CLK1
167
SA2
42
CLK0
84
VCC
126
NC
168
VCC
HYS64(72)V4120GU-10
4M x 64/72 SDRAM-Module
Semiconductor Group
4
Block Diagram for 4M x 64/72 SDRAM DIMM modules (HYS64/72V4120GU)
CS
DQM
DQ0-DQ7
D1
CS
DQM
DQ0-DQ7
D0
CS
DQM
DQ0-DQ7
D16
CS
DQM
DQ0-DQ7
D2
CS
DQM
DQ0-DQ7
D3
CS1
CS0
DQMB0
DQ0-DQ7
DQMB1
DQ8-DQ15
CB0-CB7
DQMB2
DQ16-DQ23
DQMB3
DQ24-DQ31
A0-A10,BS
VDD
VSS
D0 - D15,(D16,D17)
C1-C15,(C16,C17)
SCL
SDA
SA0
SA1
SA2
E
2
PROM (256wordx8bit)
SA0
SA1
SA2
D0 - D15,(D16,D17)
D0 - D7,(D8)
D0 - D15,(D16,D17)
D0 - D7,(D16)
RAS, CAS, WE
CKE0
Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 Ohms except otherwise noted.
CS2
CS
DQM
DQ0-DQ7
D9
CS
DQM
DQ0-DQ7
D8
CS
DQM
DQ0-DQ7
D17
CS
DQM
DQ0-DQ7
D10
CS
DQM
DQ0-DQ7
D11
CS
DQM
DQ0-DQ7
D5
CS
DQM
DQ0-DQ7
D4
CS
DQM
DQ0-DQ7
D6
CS
DQM
DQ0-DQ7
D7
DQMB4
DQ32-DQ39
DQMB5
DQ40-DQ47
DQMB6
DQ48-DQ55
DQMB7
DQ56-DQ63
CS
DQM
DQ0-DQ7
D13
CS
DQM
DQ0-DQ7
D12
CS
DQM
DQ0-DQ7
D14
CS
DQM
DQ0-DQ7
D15
CS3
D9 - D15,(D17)
CKE1
VDD
2 SDRAMs
CLK0
2 SDRAMs
2 (3) SDRAMs
CLK1
2 SDRAMs
2 SDRAMs
CLK2
2 SDRAMs
2 (3) SDRAMs
CLK3
2 SDRAMs
10k
HYS64(72)V4120GU-10
4M x 64/72 SDRAM-Module
Semiconductor Group
5
DC Characteristics
T
A
= 0 to 70
C;
V
SS
= 0 V;
V
DD,
V
DDQ
= 3.3 V
0.3 V
Capacitance
T
A
= 0 to 70
C;
V
DD
= 3.3 V
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input high voltage
V
I
H
2.0
Vcc+0.3
V
Input low voltage
V
I
L
0.5
0.8
V
Output high voltage (
I
OUT
= 2.0 mA)
V
OH
2.4
V
Output low voltage (
I
OUT
= 2.0 mA)
V
OL
0.4
V
Input leakage current, any input
(0 V <
V
I
N
< 3.6 V, all other inputs = 0 V)
I
I
(L)
40
40
A
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
CC
)
I
O(L)
40
40
A
Parameter
Symbol
Limit Values
Unit
max.
(x64)
max.
(x72)
Input capacitance
(A0 to A11, RAS, CAS, WE)
C
I
1
80
90
pF
Input capacitance
(CS0 -CS3, )
C
I
2
30
35 pF
Input capacitance (
CLK0 - CLK3
)
C
I
CL
38
38
pF
Input capacitance
(CKE0, CKE1)
C
I
3
50
55
pF
Input capacitance
(DQMB0 - DQMB7)
C
I
4
15
20
pF
Input / Output capacitance
(DQ0-DQ63,CB0-CB7)
C
I
O
20
20
pF
Input Capacitance (SCL,SA0-2)
C
sc
8
8
pF
Input/Output Capacitance
C
sd
10
10 pF
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