14.07.1998
Semiconductor Group
Page 1
HITFET
BTS 949
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
Product Summary
Drain source voltage
V
60
V
DS
On-state resistance
R
DS(on)
18
m
A
Current limit
I
D(lim)
9.5
Nominal load current
A
I
D(ISO)
19
Clamping energy
mJ
E
AS
6000
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
1
3
Over-
protection
temperature
Short circuit
protection
+
dv/dt
limitation
limitation
Vbb
Short circuit
protection
LOAD
2
4
CC
NC
R
CC
5
Overload
protection
M
14.07.1998
Semiconductor Group
Page 2
BTS 949
Maximum Ratings at Tj = 25 C unless otherwise specified
Parameter
Symbol
Unit
Value
Drain source voltage
V
DS
60
V
Drain source voltage for short circuit protection
R
CC
= 0
without
R
CC
V
DS(SC)
15
50
Continuous input current
1)
-0.2V
V
IN
10V
V
IN
< -0.2V or
V
IN
> 10V
I
IN
no limit
|
I
IN
|
2
mA
Operating temperature
T
j
C
- 40 ... +150
Storage temperature
T
stg
- 55 ... +150
Power dissipation
T
C
= 25 C
240
W
P
tot
Unclamped single pulse inductive energy
I
D(ISO)
= 19 A
6000
mJ
E
AS
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
3000
V
Load dump protection
V
LoadDump
2)
=
V
A
+
V
S
V
IN
=low or high;
V
A
=13.5 V
t
d
= 400 ms,
R
I
= 2
,
I
D
=0,5*19A
t
d
= 400 ms,
R
I
= 2
,
I
D
= 19A
110
92
V
V
LD
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R
thJC
0.7
K/W
75
R
thJA
junction - ambient:
SMD version, device on PCB:
3)
R
thJA
45
1
A sensor holding current of 500 A has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for Drain connection. PCB is vertical
without blown air.
14.07.1998
Semiconductor Group
Page 3
BTS 949
Electrical Characteristics
Parameter
Symbol
Unit
Values
max.
typ.
min.
at T
j
=25C, unless otherwise specified
Characteristics
-
Drain source clamp voltage
T
j
= - 40 ...+ 150C,
I
D
= 10 mA
73
V
V
DS(AZ)
60
-
I
DSS
-
Off state drain current
V
DS
= 32 V,
T
j
= -40...+150 C,
V
IN
= 0 V
25
A
1.7
2.2
V
IN(th)
1.3
Input threshold voltage
I
D
= 3,9 mA
V
-
100
A
I
IN(1)
-
Input current - normal operation,
I
D
<
I
D(lim)
:
V
IN
= 10 V
400
Input current - current limitation mode,
I
D
=
I
D(lim)
:
V
IN
= 10 V
1000
I
IN(2)
-
3000
I
IN(3)
1500
Input current - after thermal shutdown,
I
D
=0 A:
V
IN
= 10 V
6000
-
-
-
-
I
IN(H)
500
300
Input holding current after thermal shutdown
T
j
= 25 C
T
j
= 150 C
18
30
22
44
m
R
DS(on)
-
-
On-state resistance
I
D
= 19 A,
V
IN
= 5 V,
T
j
= 25 C
I
D
= 19 A,
V
IN
= 5 V,
T
j
= 150 C
14
25
On-state resistance
I
D
= 19 A,
V
IN
= 10 V,
T
j
= 25 C
I
D
= 19 A,
V
IN
= 10 V,
T
j
= 150 C
18
36
R
DS(on)
-
-
-
I
D(ISO)
19
Nominal load current (ISO 10483)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 C
-
A
14.07.1998
Semiconductor Group
Page 4
BTS 949
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
=25C, unless otherwise specified
min.
typ.
max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V,
V
DS
= 12 V
I
D(SCp)
-
175
-
A
Current limit
1)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 350 s,
T
j
= -40...+150 C, without
R
CC
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 350 s,
T
j
= -40...+150 C,
R
CC
= 0
I
D(lim)
9.5
150
19
220
40
270
Dynamic Characteristics
s
t
on
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 1
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
40
100
-
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 1
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
-
t
off
70
170
V/s
Slew rate on 70 to 50%
V
bb
:
R
L
= 1
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
-dV
DS
/dt
on
3
1
-
Slew rate off 50 to 70%
V
bb
:
R
L
= 1
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
1
3
dV
DS
/dt
off
-
Protection Functions
T
jt
C
Thermal overload trip temperature
165
-
150
E
AS
Unclamped single pulse inductive energy
I
D
= 19 A,
T
j
= 25 C,
V
bb
= 32 V
I
D
= 19 A,
T
j
= 150 C,
V
bb
= 32 V
-
-
-
-
6000
1800
mJ
Inverse Diode
V
SD
Inverse diode forward voltage
I
F
= 5*19A,
t
m
= 300
s,
V
IN
= 0 V
1,1
-
-
V
1
Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values
might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition
14.07.1998
Semiconductor Group
Page 5
BTS 949
Block Diagramm
Terms
Inductive and overvoltage output clamp
HITFET
IN
CC
D
V IN
ID
VDS
1
4
5
IIN
3
S
Vbb
RCC
RL
CC
V
HITFET
V
Z
D
S
Short circuit behaviour
The ground lead impedance of
R
CC
should be as low as possible
V IN
ID
I D(SCp)
t 0
tm
t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD
I
Source
ESD zener diodes are not designed
for DC current > 2 mA @
V
IN
>10V.
t0: Turn on into a short circuit
tm : Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level wher
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
14.07.1998
Semiconductor Group
Page 6
BTS 949
On-state resistance
R
ON
= f(T
j
); I
D
=19A; V
IN
=10V
-50
-25
0
25
50
75
100
C
150
T
j
0
5
10
15
20
25
30
m
40
R
DS(on)
typ.
max.
Maximum allowable power dissipation
P
tot
= f(T
c
)
0
20
40
60
80
100
120 C
150
150
0
20
40
60
80
100
120
140
160
180
200
W
240
BTS 949
P
tot
On-state resistance
R
ON
= f(T
j
); I
D
= 19A; V
IN
=5V
-50
-25
0
25
50
75
100
C
150
T
j
0
5
10
15
20
25
30
35
m
45
R
DS(on)
typ.
max.
Typ. input threshold voltage
V
IN(th)
= f(T
j
); I
D
=3,9A; V
DS
=12V
-50
-25
0
25
50
75
100
C
150
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
2.0
V
IN(th)
14.07.1998
Semiconductor Group
Page 7
BTS 949
Typ. transfer characteristics
I
D
= f(V
IN
); V
DS
=12V; T
j
=25C
0
1
2
3
4
5
V
7
V
IN
0
20
40
60
80
100
120
A
160
I
D
Typ. short circuit current
I
Dlim
= f(T
j
); R
CC
=0
, V
DS
=12V
Parameter: V
IN
-50
-25
0
25
50
75
100
C
150
T
j
0
50
100
150
A
250
I
D
3V
4V
5V
6V
7V
8V
9V
10V
Typ. output characteristic
I
D
= f(V
DS
); T
j
=25C
Parameter: V
IN
0
1
2
3
4
5
V
7
V
DS
0
25
50
75
100
A
150
I
D
VIN=3V
4V
5V
6V
10V
Safe Operating Area
I
D(SC)
= f(V
DS
); T
j
=25C
0
10
20
30
V
50
V
DS
0
50
100
150
200
A
300
I
D
14.07.1998
Semiconductor Group
Page 8
BTS 949
Typ. current limit versus R
CC
I
D(lim)
= f(R
CC
); T
j
=25C
Parameter: V
IN
10
-2
10
-1
10
0
10
1
10
2
10
4
R
CC
0
25
50
75
100
125
150
175
200
A
250
I
D
10V
5V
Typ. current sense characteristics
V
CC
= f(I
D
); V
IN
=10V
Parameter: R
CC
, T
j
0
10
20
30
40
50
A
65
I
D
0
50
100
150
200
250
300
350
400
450
500
V
600
V
CC
125C
no Rcc
25C
82 Ohm
47 Ohm
22 Ohm
Transient thermal impedance
Z
thJC
= f(t
P
)
Parameter: D=t
P
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
2
s
t
P
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
0
0.005
0.01
0.02
0.05
0.1
0.2
D=0.5
14.07.1998
Semiconductor Group
Page 9
BTS 949
Application examples:
Current Sense Features and Status
Signals
D
S
IN
CC
C
V
bb
HITFET
RCC
V
CC
IN
V
cc
V
cc
open
load
thermal
shutdown
reached triptemperature
The accuray of Vcc is at each
temperature about
10 %
Status signal of thermal shutdown by
monitoring input current
D
S
IN
C
V
bb
HITFET
V
IN
RSt
V
IN
thermal shutdown
V
CC
C
V =
R
ST
*
I
IN(3)
14.07.1998
Semiconductor Group
Page 10
BTS 949
Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6703-A4
Ordering Code: Q67060-S6703-A2
Ordering Code: Q67060-S6703-A3
14.07.1998
Semiconductor Group
Page 11
BTS 949
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstrae 73,
81541 Mnchen
Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
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1
of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
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2
with the express written approval of the Semiconductor Group of Siemens AG.
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expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
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