Semiconductor Group
326
01.97
Silicon Dual Schottky Diode
BAT 114-099
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(taped & reel)
Pin Configuration
Package
1)
BAT 114-099
S7
Q62702-A1017
SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Symbol
Limit Values
Unit
Reverse voltage
V
R
4
V
Forward current
I
F
90
mA
Operation temperature
T
op
-
55 to + 150
C
Storage temperature
T
stg
-
55 to + 150
C
Power dissipation,
T
S
70
C
P
tot
100
mW
Features
High barrier diode for balanced mixers, phase
detectors and modulators
BAT 114-099
Semiconductor Group
327
Thermal Resistance
(per diode)
Parameter
Symbol
Limit Values
Unit
Junction to soldering point
R
thJS
780
K/W
Junction to ambient
1)
R
thJA
1020
K/W
1)
Mounted on alumina 15 mm
16.7 mm to 0.7 mm
Electrical Characteristics
(per diode;
T
A
= 25
C)
Parameter
Symbol
Limit Values
Unit
min. typ.
max.
Breakdown voltage
I
R
= 5
A
V
BR
4
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
-
0.6
0.7
0.7
0.8
V
Forward voltage matching
1)
I
F
= 10 mA
V
F
-
-
10
mV
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
-
0.25
0.5
pF
Forward resistance
I
F
= 10 mA / 50 mA
R
F
-
5.5
-
1)
V
F
is difference between lowest and highest
V
F
in component.
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