Semiconductor Group
1
Feb-01-1996
BAT 63-099R
Silicon Schottky Diodes
Zero bias diode array for mixer and detectors up to
GHz frequencies
Crossover ring quad
Type
Marking Ordering Code
Pin Configuration
Package
BAT 63-099RSN
Q62702-A1105
1 = A
2 = C
SOT-143
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
40
mA
Total power dissipation, BAT17W
T
A
97C
P
tot
mW
Total power dissipation, BAT17-04...06W
T
S
92C
P
tot
Junction temperature
T
j
150
C
Operating temperature range
T
op
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction - ambient, BAT17W
R
thJA
K/W
Junction - ambient, BAT17-04W...06W
R
thJA
Junction - soldering poin, BAT17W
R
thJS
Junction - soldering point, BAT17-04W...06W
R
thJS
Semiconductor Group
2
Feb-01-1996
BAT 63-099R
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
V
Reverse current
V
R
= 40 V,
T
A
= 25 C
I
R
-
-
10
A
Forward voltage
I
F
= 2 mA
V
F
-
0.85
1
V
Diode capacitance
V
R
= 0 ,
f = 1 MHz
C
T
-
0.35
0.6
pF
Differential forward resistance
I
F
= 5 mA,
f = 100 MHz
R
F
OHM
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