BAT 62-07W
Semiconductor Group
Sep-07-1998
1
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Package
Pin Configuration
4=A1
Q62702-A1198
BAT 62-07W
1=C1
2=C2
3=A2
SOT-343
62s
Maximum Ratings
Parameter
Symbol
Unit
Value
V
R
40
Diode reverse voltage
V
20
mA
I
F
Forward current
Total power dissipation,
T
S
= 103 C
P
tot
100
mW
150
C
T
j
Junction temperature
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
K/W
R
thJA
630
Junction - ambient
1)
Junction - soldering point
R
thJS
470
Semiconductor Group
1
1998-11-01
BAT 62-07W
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC characteristics
10
A
-
-
I
R
Reverse current
V
R
= 40 V
V
F
-
0.58
1
V
Forward voltage
I
F
= 2 mA
AC characteristics
pF
C
T
Diode capacitance
V
R
= 0 V,
f = 1 MHz
-
0.6
0.35
-
0.1
Case capacitance
f = 1 MHz
-
C
C
225
-
k
-
R
0
Differential resistance
V
R
= 0 ,
f = 10 kHz
2
Series inductance chip to ground
L
s
-
nH
-
Semiconductor Group
2
1998-11-01